(19)
(11) EP 0 972 310 A1

(12)

(43) Date of publication:
19.01.2000 Bulletin 2000/03

(21) Application number: 98906549.5

(22) Date of filing: 18.02.1998
(51) International Patent Classification (IPC)7: H01L 33/00
(86) International application number:
PCT/US9803/146
(87) International publication number:
WO 9837/586 (27.08.1998 Gazette 1998/34)
(84) Designated Contracting States:
DE FR GB

(30) Priority: 21.02.1997 JP 3770597

(71) Applicant: Hewlett-Packard Company
Palo AltoCalifornia 94303-0890 (US)

(72) Inventors:
  • YAMADA, Norihide
    Tokyo 185-0013 (JP)
  • YAMAOKA, Yoshifumi
    Kawasaki-shi,Kanagawa 211-0041 (JP)
  • TAKEUCHI, Tetsuya
    Kanagawa 214-0021 (JP)
  • KANEKO, Yawara
    Kanagawa 253-0056 (JP)

(74) Representative: Schoppe, Fritz, Dipl.-Ing. 
Schoppe, Zimmermann & StöckelerPatentanwältePostfach 71 08 67
81458 München
81458 München (DE)

   


(54) METHOD FOR FABRICATING LOW-RESISTANCE CONTACTS ON NITRIDE SEMICONDUCTOR DEVICES