(19)
(11)
EP 0 980 589 A1
(12)
(43)
Date of publication:
23.02.2000
Bulletin 2000/08
(21)
Application number:
98904481.3
(22)
Date of filing:
12.02.1998
(51)
International Patent Classification (IPC)
7
:
H01L
29/861
,
H01L
29/24
,
H01L
21/266
,
H01L
21/329
(86)
International application number:
PCT/SE9800/239
(87)
International publication number:
WO 9852/232
(
19.11.1998
Gazette 1998/46)
(84)
Designated Contracting States:
CH DE FR GB IT LI SE
(30)
Priority:
09.05.1997
SE 9701724
(71)
Applicant:
ABB RESEARCH LTD.
8050 Zürich (CH)
(72)
Inventors:
ROTTNER, Kurt
S-164 43 Kista (SE)
SCHÖNER, Adolf
S-164 43 Kista (SE)
BAKOWSKI, Mietek
S-151 60 Södertälje (SE)
(74)
Representative:
Olsson, Jan et al
Bjerkéns Patentbyra KBP.O.Box 1274
801 37 Gävle
801 37 Gävle (SE)
(54)
A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF