(19)
(11) EP 0 980 589 A1

(12)

(43) Date of publication:
23.02.2000 Bulletin 2000/08

(21) Application number: 98904481.3

(22) Date of filing: 12.02.1998
(51) International Patent Classification (IPC)7H01L 29/861, H01L 29/24, H01L 21/266, H01L 21/329
(86) International application number:
PCT/SE9800/239
(87) International publication number:
WO 9852/232 (19.11.1998 Gazette 1998/46)
(84) Designated Contracting States:
CH DE FR GB IT LI SE

(30) Priority: 09.05.1997 SE 9701724

(71) Applicant: ABB RESEARCH LTD.
8050 Zürich (CH)

(72) Inventors:
  • ROTTNER, Kurt
    S-164 43 Kista (SE)
  • SCHÖNER, Adolf
    S-164 43 Kista (SE)
  • BAKOWSKI, Mietek
    S-151 60 Södertälje (SE)

(74) Representative: Olsson, Jan et al
Bjerkéns Patentbyra KBP.O.Box 1274
801 37 Gävle
801 37 Gävle (SE)

   


(54) A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF