(19)
(11) EP 0 989 606 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
05.07.2000 Bulletin 2000/27

(43) Date of publication A2:
29.03.2000 Bulletin 2000/13

(21) Application number: 99118655.2

(22) Date of filing: 22.09.1999
(51) International Patent Classification (IPC)7: H01L 23/40, H01L 23/473
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 22.09.1998 JP 26771298
22.09.1998 JP 26771398
11.12.1998 JP 35279798
08.02.1999 JP 2955199
19.05.1999 JP 13866299
23.08.1999 JP 23505999

(71) Applicant: MITSUBISHI MATERIALS CORPORATION
Chiyoda-ku, Tokyo (JP)

(72) Inventors:
  • Nagase, Toshiyuki, c/o Mitsubishi Materials Corp.
    Omiya-Shi, Saitama 330-8508 (JP)
  • Nagatomo, Yoshiyuki, c/o Mitsubishi Materials Corp
    Omiya-Shi, Saitama 330-8508 (JP)
  • Kubo, Kazuaki, c/o Mitsubishi Materials Corp.
    Omiya-Shi, Saitama 330-8508 (JP)
  • Shimamura, Shoichi, c/o Mitsubishi Materials Corp.
    Omiya-Shi, Saitama 330-8508 (JP)
  • Goshi, Koichi, c/o Mitsubishi Materials Corp.
    Omiya-Shi, Saitama 330-8508 (JP)

(74) Representative: Gille Hrabal Struck Neidlein Prop Roos 
Patentanwälte Brucknerstrasse 20
40593 Düsseldorf
40593 Düsseldorf (DE)

   


(54) Power module substrate, method of producing the same, and semiconductor device including the substrate


(57) A power module substrate includes a ceramic substrate having a circuit pattern formed thereon, and a metal frame with which the ceramic substrate can be joined to a water-cooling type heat sink. The metal frame has a thickness equal to that of the ceramic substrate or the ceramic substrate having the circuit pattern, and is provided with plural perforations formed therein. Metal thin sheets having through-holes in communication with the corresponding perforations, and containing contacting portions having the undersides thereof contacted to at least a part of the circumferential surface of the ceramic substrate are disposed on the surface of the metal frame. In a semiconductor device, a semiconductor element is mounted onto the circuit pattern, and the power module substrate is joined directly to the water-cooling type heat sink by inserting male screws through the through-holes and the perforations, and screwing the male screws in the female screws of the water-cooling type heat sink.






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