(19)
(11) EP 0 996 975 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
14.09.2011 Bulletin 2011/37

(45) Mention of the grant of the patent:
05.01.2011 Bulletin 2011/01

(21) Application number: 98934229.0

(22) Date of filing: 30.06.1998
(51) International Patent Classification (IPC): 
H01L 21/336(2006.01)
H01L 29/24(2006.01)
 H01L 29/78(2006.01)
(86) International application number:
PCT/US1998/013703
(87) International publication number:
WO 1999/000833 (07.01.1999 Gazette 1999/01)

(54)

METHOD OF FABRICATING A FIELD EFFECT TRANSISTOR IN SILICON CARBIDE

HERSTELLUNGSVERFAHREN EINES FELDEFFEKTTRANSISTORS AUS SILIZIUMKARBID

METHODE DE FABRICATION D'UN TRANSISTOR A EFFET DE CHAMP EN CARBURE DE SILICIUM

(84) Designated Contracting States:
AT CH DE FR GB IT LI SE

(30) Priority: 30.06.1997 US 884726

(43) Date of publication of application:
03.05.2000 Bulletin 2000/18

(73) Proprietor: HARRIS CORPORATION
Melbourne, FL 32919 (US)

(72) Inventor:
  • FULLER, Robert, T.
    Sandston, VA 23150 (US)

(74) Representative: Hoarton, Lloyd Douglas Charles et al
Forrester & Boehmert Pettenkoferstrasse 20-22
80336 Munich
80336 Munich (DE)


(56) References cited: : 
US-A- 5 322 802
US-A- 5 510 281
 US-A- 5 384 270
   
  • SHENOY J N ET AL: "HIGH-VOLTAGE DOUBLE-IMPLANTED POWER MOSFET'S IN 6H-SIC" IEEE ELECTRON DEVICE LETTERS, vol. 18, no. 3, March 1997, pages 93-95, XP000678866
  • PAN J N ET AL: "SELF-ALIGNED 6H-SIC MOSFETS WITH IMPROVED CURRENT DRIVE" ELECTRONICS LETTERS, vol. 31, no. 14, 6 July 1995, page 1200/1201 XP000525348
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).