Method for forming thick film layer of micro injecting device

(19)

(11)

EP 0 999 057 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	29.11.2000 Bulletin 2000/48

(43)	Date of publication A2:
	10.05.2000 Bulletin 2000/19

(21)	Application number: 99308721.2

(22)	Date of filing: 03.11.1999

(51)	International Patent Classification (IPC)⁷: B41J 2/16

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

(30)

Priority:

03.11.1998 RU 98119888

(71)	Applicant: SAMSUNG ELECTRONICS CO. LTD.
	Suwon-city, Kyounggi-do 441-742 (KR)

(72)	Inventors:
	Dunaev, Boris Nikolaevich Moscow 111558 (RU) Ahn, Byung-sun Paldal-gu, Suwon, Kyonggi-do (KR) Zukov, Andrey Aleksandrovich Moscow 109029 (RU)

(74)	Representative: Sanderson, Nigel Paul et al
	Harrison Goddard Foote Fountain Precinct Balm Green, Sheffield S1 1RZ Balm Green, Sheffield S1 1RZ (GB)

(54)	Method for forming thick film layer of micro injecting device

(57) A method for forming at thick film layer (30) of micro injecting device is disclosed in which a thin film layer (31') is formed on a substrate (1), a thick film layer (32') is formed on the thin film layer (31') without performing additional heat-treatment, and the thin film layer (31') and thick film layer (32') formed sequentially on the substrate are simultaneously heat-treated, to thereby complete a single thick film layer (30). The single thick film layer (30) is formed by a sequential coating process without being interfered by heat-treatment, thereby eliminating an isolating line. As a result, an overall durability of thick film layer (30) can be significantly enhanced.

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