IN x?Ga 1-x?P STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR - Patent 1034569

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(11)

EP 1 034 569 A2

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(88)	Date of publication A3:
	14.10.1999

(43)	Date of publication:
	13.09.2000 Bulletin 2000/37

(21)	Application number: 98960406.1

(22)	Date of filing: 23.11.1998

(51)	International Patent Classification (IPC)⁷: H01L 29/812, H01L 21/338

(86)	International application number:
	PCT/US9825/011

(87)	International publication number:
	WO 9927/586 (03.06.1999 Gazette 1999/22)

(84)	Designated Contracting States:
	DE FR GB IT NL SE

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Priority:

26.11.1997 US 66539 P
23.07.1998 US 121144

(71)	Applicant: THE WHITAKER CORPORATION
	Wilmington, Delaware 19808 (US)

(72)	Inventor:
	HANSON, Allen, W. Pepperell, MA 01463 (US)

(74)	Representative: Warren, Keith Stanley et al
	BARON & WARREN18 South EndKensington London W8 5BU London W8 5BU (GB)

(54)	IN x?Ga 1-x?P STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR