(19)
(11) EP 1 037 095 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
17.01.2001 Bulletin 2001/03

(43) Date of publication A2:
20.09.2000 Bulletin 2000/38

(21) Application number: 00105130.9

(22) Date of filing: 10.03.2000
(51) International Patent Classification (IPC)7G02F 1/1362
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 11.03.1999 JP 6552099
22.02.2000 JP 2000045034

(71) Applicant: SHARP KABUSHIKI KAISHA
Osaka 545-8522 (JP)

(72) Inventors:
  • Nagata, Hisashi
    Nara-shi, Nara 634-0007 (JP)
  • Izumi, Yoshihiro
    Kashihara-shi, Nara 634-0007 (JP)
  • Shimada, Takayuki
    Yamatokoriyama-shi, Nara 639-001 (JP)

(74) Representative: MÜLLER & HOFFMANN Patentanwälte 
Innere Wiener Strasse 17
81667 München
81667 München (DE)

   


(54) Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same


(57) A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.







Search report