Power semiconductor module

(19)

(11)

EP 1 043 591 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	13.12.2006 Bulletin 2006/50

(45)	Mention of the grant of the patent:
	31.05.2006 Bulletin 2006/22

(21)	Application number: 00107262.8

(22)	Date of filing: 03.04.2000

(51)

International Patent Classification (IPC):

G01R 1/20^(2006.01)
H01L 23/64^(2006.01)

H01L 23/62^(2006.01)

(54)	Power semiconductor module Leistungshalbleitermodul Module semiconducteur de puissance

(84)	Designated Contracting States:
	DE FR GB IT

(30)

Priority:

05.04.1999 JP 9724699
06.03.2000 JP 2000059713

(43)	Date of publication of application:
	11.10.2000 Bulletin 2000/41

(73)	Proprietor: MITSUBISHI DENKI KABUSHIKI KAISHA
	Chiyoda-ku Tokyo 100-8310 (JP)

(72)	Inventors:
	Muto, Hirotaka Chiyoda-ku, Tokyo 100-8310 (JP) Kikunaga, Toshiyuki Chiyoda-ku, Tokyo 100-8310 (JP) Ohi, Takeshi Chiyoda-ku, Tokyo 100-8310 (JP) Kinouchi, Shin-ichi Chiyoda-ku, Tokyo 100-8310 (JP) Horiguchi, Takeshi Chiyoda-ku, Tokyo 100-8310 (JP) Usui, Osamu Chiyoda-ku, Tokyo 100-8310 (JP) Okuda, Tatsuya Chiyoda-ku, Tokyo 100-8310 (JP)

(74)	Representative: Popp, Eugen et al
	MEISSNER, BOLTE & PARTNER Postfach 86 06 24 81633 München 81633 München (DE)

(56)

References cited: :

EP-A- 0 500 975
DE-A- 2 413 457
US-A- 4 617 548

EP-A- 0 680 147
DE-A- 3 611 595
US-A- 5 061 863

PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12, 26 December 1996 (1996-12-26) -& JP 08 204180 A (FUJI ELECTRIC CO LTD), 9 August 1996 (1996-08-09)

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).