Probe card for testing semiconductor device, and semiconductor device test method

(19)

(11)

EP 1 045 438 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	25.03.2009 Bulletin 2009/13

(45)	Mention of the grant of the patent:
	07.01.2009 Bulletin 2009/02

(21)	Application number: 00107939.1

(22)	Date of filing: 14.04.2000

(51)

International Patent Classification (IPC):

H01L 21/66^(2006.01)
G01R 1/04^(2006.01)

G01R 1/073^(2006.01)

(54)	Probe card for testing semiconductor device, and semiconductor device test method Testsondenkarte und Testverfahren für eine Halbleitervorrichtung Carte à sondes pour tester un dispositif semiconducteur et méthode de test

(84)	Designated Contracting States:
	DE FR GB

(30)

Priority:

16.04.1999 JP 11006199

(43)	Date of publication of application:
	18.10.2000 Bulletin 2000/42

(60)	Divisional application:
	08167734.6
	08167742.9 / 2023386

(73)	Proprietor: Fujitsu Microelectronics Limited
	Tokyo 163-0722 (JP)

(72)	Inventor:
	Maruyama, Shigeyuki Nakahara-ku, Kawasaki-shi, Kanagawa 211 (JP)

(74)	Representative: Sunderland, James Harry et al
	Haseltine Lake Lincoln House 300 High Holborn London WC1V 7JH London WC1V 7JH (GB)

(56)

References cited: :

EP-A- 0 484 141
US-A- 5 559 446

EP-A- 0 707 214
US-A- 5 757 199

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).