<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.3//EN" "ep-patent-document-v1-3.dtd">
<ep-patent-document id="EP00107939B8W1" file="EP00107939W1B8.xml" lang="en" country="EP" doc-number="1045438" kind="B8" correction-code="W1" date-publ="20090325" status="c" dtd-version="ep-patent-document-v1-3">
<SDOBI lang="en"><B000><eptags><B001EP>......DE....FRGB................................................................</B001EP><B005EP>J</B005EP><B007EP>DIM360 Ver 2.15 (14 Jul 2008) -  2999001/0</B007EP></eptags></B000><B100><B110>1045438</B110><B120><B121>CORRECTED EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20090325</date></B140><B150><B151>W1</B151><B153>73</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>00107939.1</B210><B220><date>20000414</date></B220><B240><B241><date>20041222</date></B241><B242><date>20051208</date></B242></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>11006199</B310><B320><date>19990416</date></B320><B330><ctry>JP</ctry></B330></B300><B400><B405><date>20090325</date><bnum>200913</bnum></B405><B430><date>20001018</date><bnum>200042</bnum></B430><B450><date>20090107</date><bnum>200902</bnum></B450><B452EP><date>20080728</date></B452EP><B480><date>20090325</date><bnum>200913</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/66        20060101AFI20080707BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>G01R   1/073       20060101ALI20080707BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>G01R   1/04        20060101ALI20080707BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>Testsondenkarte und Testverfahren für eine Halbleitervorrichtung</B542><B541>en</B541><B542>Probe card for testing semiconductor device, and semiconductor device test method</B542><B541>fr</B541><B542>Carte à sondes pour tester un dispositif semiconducteur et méthode de test</B542></B540><B560><B561><text>EP-A- 0 484 141</text></B561><B561><text>EP-A- 0 707 214</text></B561><B561><text>US-A- 5 559 446</text></B561><B561><text>US-A- 5 757 199</text></B561></B560></B500><B600><B620EP><parent><cdoc><dnum><anum>08167734.6</anum></dnum><date>20081028</date></cdoc><cdoc><dnum><anum>08167742.9</anum><pnum>2023386</pnum></dnum><date>20081028</date></cdoc></parent></B620EP></B600><B700><B720><B721><snm>Maruyama, Shigeyuki</snm><adr><str>c/o Fujitsu Limited,
1-1, Kamikodanaka 4-chome</str><city>Nakahara-ku,
Kawasaki-shi,
Kanagawa 211</city><ctry>JP</ctry></adr></B721></B720><B730><B731><snm>Fujitsu Microelectronics Limited</snm><iid>08676490</iid><irf>HL-73496/JHS</irf><adr><str>7-1, Nishi-Shinjuku 2-chome 
Shinjuku-ku</str><city>Tokyo 163-0722</city><ctry>JP</ctry></adr></B731></B730><B740><B741><snm>Sunderland, James Harry</snm><sfx>et al</sfx><iid>00047951</iid><adr><str>Haseltine Lake 
Lincoln House 
300 High Holborn</str><city>London WC1V 7JH</city><ctry>GB</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>FR</ctry><ctry>GB</ctry></B840><B880><date>20041006</date><bnum>200441</bnum></B880></B800></SDOBI>
</ep-patent-document>
