| (19) |
 |
|
(11) |
EP 1 046 613 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
23.01.2002 Bulletin 2002/04 |
| (43) |
Date of publication A2: |
|
25.10.2000 Bulletin 2000/43 |
| (22) |
Date of filing: 25.04.2000 |
|
|
| (84) |
Designated Contracting States: |
|
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
Designated Extension States: |
|
AL LT LV MK RO SI |
| (30) |
Priority: |
21.04.1999 KR 9914306 14.04.2000 KR 0019559
|
| (71) |
Applicants: |
|
- Iljin Nanotech Co., Ltd.
Seoul (KR)
- Jin Jang
Seocho-gu, Seoul (KR)
|
|
| (72) |
Inventors: |
|
- Jang, Jin
Seoul (KR)
- Chung, Suk-Jae Dept. of Physics
Dongdaemoon-Gu Seoul (KR)
|
| (74) |
Representative: Belcher, Simon James |
|
Urquhart-Dykes & Lord Tower House Merrion Way Leeds LS2 8PA Leeds LS2 8PA (GB) |
|
| |
|
| (54) |
Method of forming carbon nanotubes |
(57) An easy method of forming purified carbon nanotubes from which graphitic phase or
carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown
on a substrate using a plasma chemical vapor deposition method at a high plasma density
of 10
11 cm
-3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer
on a substrate to have a predetermined thickness by plasma deposition; purifying the
carbon nanotube layer by plasma etching; and repeating the growth and the purification
of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for
example, a carbon tetrafluoride gas, is #used as a source gas.