(19)
(11) EP 1 046 613 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
23.01.2002 Bulletin 2002/04

(43) Date of publication A2:
25.10.2000 Bulletin 2000/43

(21) Application number: 00303469.1

(22) Date of filing: 25.04.2000
(51) International Patent Classification (IPC)7C01B 31/00, C01B 31/02
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 21.04.1999 KR 9914306
14.04.2000 KR 0019559

(71) Applicants:
  • Iljin Nanotech Co., Ltd.
    Seoul (KR)
  • Jin Jang
    Seocho-gu, Seoul (KR)

(72) Inventors:
  • Jang, Jin
    Seoul (KR)
  • Chung, Suk-Jae Dept. of Physics
    Dongdaemoon-Gu Seoul (KR)

(74) Representative: Belcher, Simon James 
Urquhart-Dykes & Lord Tower House Merrion Way
Leeds LS2 8PA
Leeds LS2 8PA (GB)

   


(54) Method of forming carbon nanotubes


(57) An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 1011 cm-3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is #used as a source gas.





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