| (19) |
 |
|
(11) |
EP 1 063 706 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
13.07.2005 Bulletin 2005/28 |
| (43) |
Date of publication A2: |
|
27.12.2000 Bulletin 2000/52 |
| (22) |
Date of filing: 19.06.2000 |
|
|
| (84) |
Designated Contracting States: |
|
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
Designated Extension States: |
|
AL LT LV MK RO SI |
| (30) |
Priority: |
24.06.1999 JP 17855599
|
| (71) |
Applicant: SHIN-ETSU CHEMICAL CO., LTD. |
|
Chiyoda-ku, Tokyo (JP) |
|
| (72) |
Inventors: |
|
- Yamada, Toru
2-13-1, Isobe, Annaka-shi, Gunma-ken (JP)
- Tokunaga, Katsushi
2-13-1, Isobe, Annaka-shi, Gunma-ken (JP)
- Hirasawa, Teruhiko
2-13-1, Isobe, Annaka-shi, Gunma-ken (JP)
|
| (74) |
Representative: Wibbelmann, Jobst, Dr., Dipl.-Chem. |
|
Wuesthoff & Wuesthoff, Patent- und Rechtsanwälte, Schweigerstrasse 2
81541 München
81541 München (DE) |
|
| |
|
| (54) |
Ga-doped multicrystalline silicon, Ga-doped multicrystalline silicon wafer and method
for producing the same |
(57) There are disclosed multi-crystalline silicon which is added with Ga (gallium) as
a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises
adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the
silicon melt to allow growth of multi-crystalline silicon. According to the present
invention, there are provided multi-crystalline silicon and a multi-crystalline silicon
wafer for producing solar cells showing stable conversion efficiency for light energy
without causing photodegradation as well as methods for producing them.