FLASH MEMORY CELL WITH SELF-ALIGNED GATES AND FABRICATION PROCESS - Patent 1076916

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EP 1 076 916 A1

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(43)	Date of publication:
	21.02.2001 Bulletin 2001/08

(21)	Application number: 00908762.8

(22)	Date of filing: 17.02.2000

(51)	International Patent Classification (IPC)⁷: H01L 29/788, H01L 21/336

(86)	International application number:
	PCT/US0004/455

(87)	International publication number:
	WO 0051/188 (31.08.2000 Gazette 2000/35)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

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Priority:

23.02.1999 US 255360
24.03.1999 US 275670
12.05.1999 US 310460

(71)	Applicant: Actrans System, Inc.
	Santa Clara, CA 95054 (US)

(72)	Inventor:
	CHEN, Chiou-Feng Cupertino, CA 95014 (US)

(74)	Representative: Allard, Susan Joyce et al
	BOULT WADE TENNANT,Verulam Gardens70 Gray's Inn Road London WC1X 8BT London WC1X 8BT (GB)

(54)	FLASH MEMORY CELL WITH SELF-ALIGNED GATES AND FABRICATION PROCESS