(19)
(11) EP 1 077 502 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
13.03.2002 Bulletin 2002/11

(43) Date of publication A2:
21.02.2001 Bulletin 2001/08

(21) Application number: 00202837.1

(22) Date of filing: 11.08.2000
(51) International Patent Classification (IPC)7H01P 5/107
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 16.08.1999 US 375824

(71) Applicant: The Boeing Company
Seal Beach, California 90740-1515 (US)

(72) Inventors:
  • Hacker, Jonathan Bruce
    Thousand Oaks, CA 91362 (US)
  • Sovero, Emilio
    Thousand Oaks, CA 91360 (US)

(74) Representative: Land, Addick Adrianus Gosling et al
Arnold & Siedsma, Advocaten en Octrooigemachtigden, Sweelinckplein 1
2517 GK Den Haag
2517 GK Den Haag (NL)

   


(54) MMIC-to-waveguide RF transition and associated method


(57) An RF transition for coupling energy propagating in a waveguide transmission line into energy propagating in a monolithic microwave integrated circuit ("MMIC") is provided. The RF transition comprises a microstrip structure that includes a MMIC substrate with backside metallization and a front side microstrip. The backside metallization defines an iris, and the microstrip includes a microstrip feed formed proximate the iris. The RF transition also includes a waveguide terminating at the metallization layer around the iris to thereby convert energy propagating in the waveguide into energy propagating in the microstrip. In one embodiment, RF signal processing circuitry is monolithically formed on the MMIC substrate. The invention enables a waveguide-to-MMIC transition to be constructed at higher RF frequencies, such as millimeter wave frequencies, even with the fragile, thinner substrates and smaller device features of higher-frequency devices. The monolithic structure avoids the use of wire bonds or ribbon welds to interconnect separate substrates, such as would be used in an MIC implementation, enabling improved RF performance at higher RF frequencies. The invention enables an RF circuit to be constructed that is adapted to communicate signals with a waveguide at higher RF frequencies, such as millimeter wave frequencies, in a rugged, producible package.







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