ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYAL..............................JDIM350 (Ver 2.1 Jan 2001) 1620000/01089375EUROPEAN PATENT APPLICATIONA320021211EP00117292.320000817EnEnEn2757309919990929JP20021211200250200104042001147 7H 01P 3/08 AdeHochfrequenzschaltungsmodul und KommunikationseinrichtungenHigh frequency circuit module and communication devicefrModule de circuit à haute fréquence et dispositif de communication1Hitachi, Ltd.002041450235-55.716EP/A6 Kanda Surugadai 4-chomeChiyoda-ku, Tokyo 101-8010JPHase, Eiichi, Hitachi Ltd., New Marunouchi Bldg.Intell. Prop. Gr., 5-1, Marunouchi 1-chomeChiyoda-ku, Tokyo 100-8220JPImai, Shun, Hitachi Ltd., New Marunouchi Bldg.Intell. Prop. Gr., 5-1, Marunouchi 1-chomeChiyoda-ku, Tokyo 100-8220JPBeetz & Partner Patentanwälte00100712Steinsdorfstrasse 1080538 MünchenDEATBECHCYDEDKESFIFRGBGRIEITLILUMCNLPTSEALLTLVMKROSI20021211200250

The invention relates to a high frequency circuit module in which a two- or more-layer dielectric substrate (1, 18, 24, 30) is used, the dielectric substrate between a conductor line of a matching circuit (2-5, 9-12) on the input side or on the output side and ground metal (19, 29, 33, 34, 36-39) is composed of two or more layers and the miniaturization is enabled and a communication device using it.

As a required part can be thickened without changing the thickness of the whole dielectric substrate, the transmission loss can be reduced and the miniaturization of the high frequency circuit module and the communication device using it is enabled.