PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT - Patent 1097473

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EP 1 097 473 A1

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(43)	Date of publication:
	09.05.2001 Bulletin 2001/19

(21)	Application number: 99930623.6

(22)	Date of filing: 23.06.1999

(51)	International Patent Classification (IPC)⁷: H01L 21/318, C23C 16/34

(86)	International application number:
	PCT/US9914/244

(87)	International publication number:
	WO 0003/425 (20.01.2000 Gazette 2000/03)

(84)	Designated Contracting States:
	BE CH DE GB LI NL

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Priority:

10.07.1998 US 113534

(71)	Applicant: APPLIED MATERIALS, INC.
	Santa Clara,California 95054-3299 (US)

(72)	Inventors:
	HUANG, Judy Los Gatos, CA 95032 (US) YAU, Wai-Fan Mountain View, CA 94040 (US) CHEUNG, David Foster City, CA 94404 (US)

(74)	Representative: Bayliss, Geoffrey Cyril et al
	BOULT WADE TENNANT,Verulam Gardens70 Gray's Inn Road London WC1X 8BT London WC1X 8BT (GB)

(54)	PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT