PROCESS FOR MAPPING METAL CONTAMINANT CONCENTRATION ON A SILICON WAFER SURFACE - Patent 1105921

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EP 1 105 921 A1

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(43)	Date of publication:
	13.06.2001 Bulletin 2001/24

(21)	Application number: 99937277.4

(22)	Date of filing: 16.07.1999

(51)	International Patent Classification (IPC)⁷: H01L 21/66

(86)	International application number:
	PCT/US9916/109

(87)	International publication number:
	WO 0004/579 (27.01.2000 Gazette 2000/04)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

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Priority:

17.07.1998 JP 20323098

(71)	Applicant: MEMC Electronic Materials, Inc.
	St. Peters,Missouri 63376 (US)

(72)	Inventors:
	TOMIZAWA, Miwa,Utsunomiya Plant Utsunomiya-city,Tochigi-prefecture (JP) KURODA, Kiyoshi,Utsunomiya Plant Utsunomiya-city,Tochigi-prefecture (JP) NAKAMURA, Norio,Utsunomiya Plant Utsunomiya-city,Tochigi-prefecture (JP)

(74)	Representative: Eyles, Christopher Thomas et al
	W.P. THOMPSON & CO.Celcon House289-293 High Holborn London WC1V 7HU London WC1V 7HU (GB)

(54)	PROCESS FOR MAPPING METAL CONTAMINANT CONCENTRATION ON A SILICON WAFER SURFACE