(19)
(11) EP 1 114 210 A1

(12)

(43) Date of publication:
11.07.2001 Bulletin 2001/28

(21) Application number: 99945264.2

(22) Date of filing: 26.08.1999
(51) International Patent Classification (IPC)7: C30B 25/08, C30B 25/14, C30B 25/16, C30B 25/10
(86) International application number:
PCT/US9919/684
(87) International publication number:
WO 0012/785 (09.03.2000 Gazette 2000/10)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

(30) Priority: 26.08.1998 US 98057 P

(71) Applicant: SEMITOOL, INC.
Kalispell,Montana 59901 (US)

(72) Inventors:
  • RITTER, Georg, M.
    D-15859 Storkow (DE)
  • TILLACK, Bernd
    D-15234 Frankfurt (DE)
  • MORGENSTERN, Thomas
    D-15234 Frankfurt (DE)
  • WOLANSKY, Dirk
    D-15234 Frankfurt (DE)
  • McHUGH, Paul, R.
    Kalispell, MT 59901 (US)
  • STODDARD, Kevin
    Scottsdale, AZ 85255 (US)
  • TSAKALIS, Konstantinos
    Chandler, AZ 85226 (US)

(74) Representative: Viering, Hans-Martin, Dipl.-Ing. 
Patentanwälte Viering & Jentschura,Postfach 22 14 43
80504 München
80504 München (DE)

   


(54) LOW-TEMPERATURE PROCESS FOR FORMING AN EPITAXIAL LAYER ON A SEMICONDUCTOR SUBSTRATE