(19)
(11) EP 1 121 735 A1

(12)

(43) Date of publication:
08.08.2001 Bulletin 2001/32

(21) Application number: 99954948.8

(22) Date of filing: 14.10.1999
(51) International Patent Classification (IPC)7: H01S 5/20
(86) International application number:
PCT/US9924/146
(87) International publication number:
WO 0024/097 (27.04.2000 Gazette 2000/17)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 16.10.1998 JP 31399398

(71) Applicant: Agilent Technologies, Inc.
Palo Alto, CA 94303 (US)

(72) Inventors:
  • TAKEUCHI, Tetsuya
    Kanagawa 214-0021 (JP)
  • KANEKO, Yawara
    Kanagawa 253-0056 (JP)
  • YAMADA, Norihide
    Tokyo 185-0013 (JP)
  • AMANO, Hiroshi
    NagoyaAichi 468 (JP)
  • AKASAKI, Isamu
    NagoyaAichi 451 (JP)

(74) Representative: Schoppe, Fritz, Dipl.-Ing. 
Patentanwälte Schoppe, Zimmermann, Stöckeler & Zinkler,Postfach 71 08 67
81458 München
81458 München (DE)

   


(54) IMPROVED FAR-FIELD NITRIDE BASED SEMICONDUCTOR LASER