FIELD EFFECT TRANSISTOR STRUCTURE WITH ABRUPT SOURCE/DRAIN JUNCTIONS - Patent 1147552

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(11)

EP 1 147 552 A1

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(43)	Date of publication:
	24.10.2001 Bulletin 2001/43

(21)	Application number: 99972373.7

(22)	Date of filing: 05.11.1999

(51)	International Patent Classification (IPC)⁷: H01L 21/336

(86)	International application number:
	PCT/US9926/224

(87)	International publication number:
	WO 0030/169 (25.05.2000 Gazette 2000/21)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

12.11.1998 US 191076

(71)	Applicant: INTEL CORPORATION
	Santa Clara, CA 95052 (US)

(72)	Inventors:
	MURTHY, Anand S. Beaverton, OR 97006 (US) CHAU, Robert, S. Beaverton, OR 97008 (US) MORROW, Patrick Portland, OR 97229 (US) JAN, Chia-Hong Portland, OR 97229 (US) PACKAN, Paul Beaverton, OR 97007 (US)

(74)	Representative: Molyneaux, Martyn William et al
	Wildman, Harrold, Allen & Dixon11th Floor, Tower 3,Clements Inn, London WC2A 2AZ London WC2A 2AZ (GB)

(54)	FIELD EFFECT TRANSISTOR STRUCTURE WITH ABRUPT SOURCE/DRAIN JUNCTIONS