[0001] The present invention relates to a driving method for an organic electro-luminescence
display device, a driving method for an electro-optical device suitable for use with
a display device, such as an organic electro-luminescence display device, an electro-optical
device, and an electronic apparatus provided with such an electro-optical device.
[0002] Attention is being given to organic electro-luminescence display devices using organic
materials as luminescent materials of luminescent elements since they have a wide
viewing angle, and will potentially meet market demands, i.e., demands for thinner,
lighter, smaller, and lower power-consuming display devices.
[0003] Unlike conventional liquid crystal display devices, in organic electro-luminescence
display devices, a luminescence state of the luminescent element must be controlled
by a current. One such control method is the conductance control method (T. Shimoda,
M. Kimura, et al., Proc. Asia Display 98, 217; M. Kimura, et al., IEEE Trans. Ele.
Dev. 46, 2282 (1999); M. Kimura, et al., Proc. IDW 99, 171; and M. Kimura et al.,
Dig. AM-LCD 2000, to be published). In this method, the luminescence state of the
luminescent element is controlled by a current value, which is an analog value, and
more specifically, it is controlled by changing the potential applied to a gate electrode
of a driving transistor for driving the luminescent element. When thin-film transistors
having different current characteristics are used, however, the difference in the
current characteristics of the individual transistors may sometimes directly result
in non-uniformity in the luminescence state of the luminescent elements.
[0004] Accordingly, the area ratio gray-scale method (M. Kimura, et al., Proc. Euro Display
'99 Late-News Papers, 71, Japanese Unexamined Patent Application Publication No.9-233107,
M. Kimura, et al., Proc. IDW 99,171, M. Kimura, et al, J. SID, to be published; and
M. Kimura, et al., Dig. AM-LCD 2000 to be published) has been proposed. In the area
ratio gray-scale method, unlike the above-mentioned conductance control method, the
luminescence state of the luminescent elements is controlled without using a luminescence
state at an intermediate luminance. More specifically, in this method, the gray-scale
is displayed as follows. Pixels disposed in a matrix are divided into a plurality
of sub-pixels, and it is determined whether the luminescent elements contained in
the sub-pixels are either in a complete luminescence state or a complete non-luminescence
state. Then, among the plurality of sub-pixels, the total area of the sub-pixels in
the complete luminescence state is changed. In the area ratio gray-scale method, it
is not necessary to set an intermediate current value corresponding to the luminescence
state of the intermediate luminance. Accordingly, the influence of the current characteristics
of the transistors for driving the luminescent elements can be reduced, thereby achieving
a uniform image quality. In this method, however, the number of gray-scale levels
is restricted by the number of sub-pixels. For a greater number of gray-scale levels,
pixels must be divided into a greater number of sub-pixels, which makes the pixel
structure complicated.
[0005] Accordingly, the time ratio gray-scale method (M. Kimura, et al., Proc. IDW 99, 171;
M. Kimura, et al., Dig. AM-LCD 2000, to be published; M. Mizukami, et al., Dig. SID
2000, 912; and K. Inukai, et al., Dig. SID 2000,924) has been proposed. In the time
ratio gray-scale method, the representation of the gray-scale is implemented by changing
the period for which the luminescent elements in one frame are in the complete luminescence
state. Accordingly, unlike the area ratio gray-scale method, it is not necessary to
provide many sub-pixels for obtaining a greater number of gray-scale levels, and also,
the time ratio gray-scale method can be used together with the area ratio gray-scale
method. Thus, it is expected that the time ratio gray-scale method will be a promising
method for digitally displaying a gray-scale.
[0006] However, in the SES (Simultaneous-Erasing-Scan) time ratio gray-scale method, which
is reported in "K. Inukai, et al., Dig. SID 2000,924", in addition to the scanning
lines, reset lines are required, and thus, the luminescence area is disadvantageously
reduced.
[0007] Accordingly, a first object of the present invention is to provide a method for implementing
the representation of a gray-scale of an electro-optical device without reset lines,
and in particular, to provide a method for implementing the representation of the
gray-scale of an electro-optical device, such as an organic electro-luminescence display
device, according to the time ratio gray-scale method. A second object of the present
invention is to provide an electro-optical device driven by the above-described driving
method.
[0008] In order to achieve the first object, a first driving method for an electro-optical
device according to the present invention is a driving method for an electro-optical
device which includes, at an intersection of a scanning line and a data line, an electro-optical
element, a driving transistor for driving the electro-optical element, a switching
transistor for controlling the driving transistor, and a reset transistor for resetting
the driving transistor to a non-conducting state. The driving method includes: a setting
step of supplying an on-signal for causing the switching transistor to be in an on-state
to the switching transistor via the scanning line, and of supplying a set signal for
selecting a conducting state or a non-conducting state of the driving transistor to
the driving transistor via the data line and the switching transistor in accordance
with a period for which the on-signal is supplied; and a resetting step of supplying
an on-signal for causing the reset transistor to be in an on-state to the reset transistor
via the scanning line so as to reset the driving transistor to the non-conducting
state. Accordingly, by supplying the on-signal for the switching transistor and the
on-signal for the reset transistor via the same scanning line, the luminescence period
can suitably be set without a reset line. In this specification, the electro-optical
element and the electro-optical device respectively indicate an element and a device
in which the luminescence state or the optical characteristic is electrically controlled.
Specific examples of the electro-optical device include display devices, such as luminescence
display devices, liquid crystal display devices, and electrophoretic display devices.
[0009] Throughout the specification, the "step of supplying an on-signal to the switching
transistor via the scanning line, and of supplying a set signal for selecting a conducting
state or a non-conducting state of the driving transistor to the driving transistor
via the data line and the switching transistor in accordance with the on-signal" is
defined as the "setting step". The "step of resetting the driving transistor to the
non-conducting state by supplying an on-signal for causing the reset transistor to
be in the on-state to the reset transistor via the scanning line" is defined as the
"resetting step".
[0010] According to a second driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
electro-optical device may further include a power line for supplying a current to
the electro-optical element via the driving transistor, and one end of the reset transistor
may be connected to the power line.
[0011] According to a third driving method for an electro-optical device of the present
invention, the conductivity type of the switching transistor and the conductivity
type of the reset transistor may be different from each other. More specifically,
for example, if the switching transistor is n-type, the reset transistor is p-type.
If the switching transistor is p-type, the reset transistor is n-type. Accordingly,
by suitably selecting a high-potential signal or a low-potential signal, the switching
transistor and the reset transistor can be complementarily operated.
[0012] According to a fourth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
conductivity types of the switching transistor, the driving transistor, and the reset
transistor may be respectively n-type, p-type, and p-type. That is, when a high-potential
scanning signal is supplied, the switching transistor enters the on-state. When a
low-potential scanning signal is supplied, the reset transistor enters the on-state.
Thus, the switching transistor and the reset transistor can be complementarily operated.
[0013] According to a fifth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, a
voltage VS corresponding to the on-signal for causing the switching transistor to
be in the on-state, a voltage VR corresponding to the on-signal for causing the reset
transistor to be in the on-state, and a voltage V0 corresponding to an off-signal
for causing both the switching transistor and the reset transistor to be in an off-state
may satisfy a relational expression: VS > V0 > VR.
[0014] According to a sixth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
voltage VS, the voltage VR, and the voltage V0 may satisfy relational expressions:
-VS ≈ VR, and V0 = 0 V (voltages). According to the driving methods for electro-optical
devices set forth in claims 5 and 6, only by setting three voltage values, such as
VS, V0, and VR, the on-off operation of the switching transistor and the on-off operation
of the reset transistor can be performed.
[0015] According to a seventh driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, while
the switching transistor is in the on-state, the reset transistor is in the off-state,
and, while the reset transistor is in the on-state, the switching transistor is in
the off-state. With this arrangement, the state of the electro-optical element and
the period for which the selected state is retained can precisely be set.
[0016] According to an eighth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, a
gray-scale may be obtained by setting a time interval between the setting step and
the resetting step. That is, the time interval between the setting step and the resetting
step corresponds to the period for which the selected state of the electro-optical
element is retained. Thus, by suitably setting this time interval, a gray-scale can
be obtained.
[0017] According to a ninth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, a
gray-scale may be obtained by performing a plurality of set-reset operations, each
set-reset operation including the setting step and the resetting step. In the setting
step, the state of the electro-optical element is selected, and in the resetting step,
the period for which the selected state is retained is determined. Thus, by repeating
a plurality of above-described set-reset operations, a multi-level gray-scale can
be obtained. Throughout this specification, the set-reset operation is defined as
the operation including the setting step and the resetting step.
[0018] According to a tenth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
time interval between the setting step and the resetting step may be different for
each of the plurality of set-reset operations.
[0019] According to an eleventh driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
time interval between the setting step and the resetting step for each of the plurality
of set-reset operations may be completely different from the others, and the ratio
of time intervals for the plurality of set-reset operations may be about 1:2: .. :2
n (n is an integer of one or more) based on the minimum time interval. For example,
if two set-reset operations with a time interval ratio of 1:2 are performed, four
gray-scale levels, i.e., 0, 1, 2, 3, can be displayed. If two set-reset operations
with a time interval ratio of 1:1 are performed, three gray-scale levels, i.e., 0,
1, and 2 can be displayed. That is, in this driving method for an electro-optical
device, a maximum number of gray-scale levels can be obtained by a minimum number
of set-reset operations. The time interval ratio does not have to precisely be 1:2:
.. :2
n (n is an integer of one or more), and may be sufficient to such a degree to satisfy
a required gray-scale precision.
[0020] According to a twelfth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
set signal may be a signal for setting the driving transistor to be in the conducting
state rather than the signal for selecting the conducting state or the non-conducting
state of the driving transistor. This means that an intermediate conducting state
other than the two states, i.e., the conducting state and the non-conducting state,
of the driving transistor is selectable. This can be implemented by supplying the
set signal as a signal having three or more consecutive or discrete values. This driving
method is effective for implementing many gray-scale levels.
[0021] According to a thirteenth driving method for an electro-optical device of the present
invention, in the above-described driving method for an electro-optical device, the
electro-optical element may be an organic electro-luminescence element. The organic
electro-luminescence element is a luminescent element using an organic material as
an electric-field luminescent material.
[0022] A first electro-optical device of the present invention is driven by the above-described
driving method for an electro-optical device. That is, in this electro-optical device,
by supplying the on-signal for the switching transistor and the on-signal for the
reset transistor via the same scanning line, the period for which the state of the
electro-optical element selected in the setting step can suitably be set without a
reset line.
[0023] A second electro-optical device of the present invention is an electro-optical device
including, at an intersection of a scanning line and a data line, an electro-optical
element, a driving transistor for driving the electro-optical element, a switching
transistor for controlling the driving transistor, and a reset transistor for resetting
the driving transistor to a non-conducting state. The electro-optical device includes
at least one drive circuit for generating a signal for setting the switching transistor
and the reset transistor to be in an on-state or an off-state, and for generating
a signal for setting the driving transistor in accordance with the signal for setting
the switching transistor to be in the on-state. It is not essential that only the
single drive circuit is used for "generating a signal for setting the switching transistor
and the reset transistor to be in an on-state or an off-state, and for generating
a signal for setting the driving transistor in accordance with the signal for setting
the switching transistor to be in the on-state". A plurality of drive circuits may
be used.
[0024] A third electro-optical device of the present invention is an electro-optical device
including, at an intersection of a scanning line and a data line, an electro-optical
element, a driving transistor for driving the electro-optical element, a switching
transistor for controlling the driving transistor, and a reset transistor for resetting
the driving transistor to a non-conducting state. The electro-optical device includes:
a scanning line driver for supplying a signal for setting the switching transistor
and the reset transistor to be in an on-state or an off-state to the scanning line;
and a data line driver for supplying a signal for setting the driving transistor to
the data line in accordance with an operation of the scanning line driver.
[0025] A fourth electro-optical device of the present invention is an electro-optical device
including, at an intersection of a scanning line and a data line, an electro-optical
element, a driving transistor for driving the electro-optical element, a switching
transistor for controlling the driving transistor, and a reset transistor for resetting
the driving transistor to a non-conducting state. An on-signal for performing a setting
step of setting a display condition of the electro-optical element is supplied to
the switching transistor via the scanning line, and an on-signal for performing a
resetting step of resetting a display condition of the electro-optical element is
supplied to the reset transistor via the scanning line. In the above description,
the definitions of the "setting step" and the "resetting step" are substantially similar
to those of the setting step and the resetting step set forth in claim 1.
[0026] In the above-described electro-optical device, a fifth electro-optical device of
the present invention may further include a power line for supplying a current to
the electro-optical element via the driving transistor, and one end of the reset transistor
may be connected to the power line. Accordingly, the first through fifth electro-optical
devices of the present invention do not require a reset line for performing the time
ratio gray-scale method. Advantageously, therefore, it is possible to ensure a sufficient
display area. If more gray-scale levels are required, the time ratio gray-scale method
can be employed with the area ratio gray-scale method by providing sub pixels in the
pixels of the electro-optical device.
[0027] According to a sixth electro-optical device of the present invention, in the above-described
electro-optical device, the electro-optical element may be an organic electro-luminescence
element.
[0028] A first electronic apparatus of the present invention is an electronic apparatus
in which the above-described electro-optical device is installed.
[0029] Embodiments of the present invention will now be described by way of further example
only and with reference to the accompanying drawings, in which:-
Fig. 1 illustrates a pixel equivalent circuit of an electro-optical device according
to an embodiment of the present invention.
Fig. 2 illustrates a pixel arrangement of an electro-optical device according to an
embodiment of the present invention.
Fig. 3 illustrates a driving method for an electro-optical apparatus according to
an embodiment of the present invention.
Fig. 4 illustrates current characteristics of a luminescent element according to an
embodiment of the present invention.
Fig. 5 illustrates part of a manufacturing process for an electro-optical device according
to an embodiment of the present invention.
Fig. 6 illustrates part of a manufacturing process for an electro-optical device according
to an embodiment of the present invention.
Fig. 7 illustrates an example of an electro-optical device of an embodiment of the
present invention applied to a mobile personal computer.
Fig. 8 illustrates an example of an electro-optical device of an embodiment of the
present invention applied to a display unit of a cellular telephone.
Fig. 9 is a perspective view illustrating a digital still camera having a finder to
which an electro-optical device of an embodiment of the present invention is applied.
[0030] Preferable embodiments of the present invention are described below.
[0031] A basic circuit used in an embodiment of the present invention includes a poly-crystal
silicon thin-film transistor formed by a low-temperature process at 600°C or lower
(low-temperature poly-Si TFT). The low-temperature poly-Si TFT can be formed on a
large, inexpensive glass substrate, and can integrate a driving circuit on a panel.
Accordingly, it is suitable for manufacturing an electro-optical device, such as a
luminescence display device. Additionally, the low-temperature poly-Si TFT is small,
but has a high current supplying power. Accordingly, it is suitable for use in a high-precision
current luminescence display device. The present invention is also applicable to an
electro-optical device driven by other types of transistors, such as an amorphous
silicon thin-film transistor (a-Si TFT), a silicon-based transistor, and an organic
thin-film transistor using an organic semiconductor.
[0032] The equivalent circuit of one pixel of an electro-optical device according to an
embodiment of the present invention is shown in Fig. 1. In this electro-optical device,
a scanning line (S1), a data line (D1), and a power line (V) are formed, and a luminescent
element (L11), a driving transistor (DT11) for driving the luminescent element (L11),
a switching transistor (ST11) for controlling the driving transistor (DT11), a reset
transistor (RT11) for resetting the driving transistor (DT11), and a capacitor (C11)
are provided at the intersection of the scanning line (S1) and the data line (D1).
One end of the luminescent element (L11) is connected to an anode (A). The driving
transistor (DT11) is p-type. Accordingly, the driving transistor (DT11) enters a conducting
state selected by a low-potential data signal to cause the luminescent element (L11)
to be in the luminescence state. In contrast, the driving transistor (DT11) enters
a non-conducting state by a selected high-potential data signal to cause the luminescent
element (L11) to be in the non-luminescence state. In the pixel equivalent circuit
shown in Fig. 1, the switching transistor (ST11), the driving transistor (DT11), and
the reset transistor (RT11) are n-type, p-type, and p-type; respectively. However,
this is not a limitation to implement the present invention.
[0033] Fig. 2 illustrates the wiring and the pixel arrangement of an electro-optical device
according to an embodiment of the present invention. Pixels are arranged in a matrix
by a plurality of scanning lines (S1, S2, ....) and a plurality of data lines (D1,
D2, ....), and a plurality of pixels are formed at corresponding intersections of
the scanning lines and the data lines. For example, a pixel 11 is provided at the
intersection of S1 and D1. Basically, the pixel includes a switching transistor (ST11),
a reset transistor (RT11), a capacitor (C11), a driving transistor (DT11), and a luminescent
element (L11), such as those shown in Fig. 1. However, the pixel may include a plurality
of sub-pixels. A power line (V) is not shown in Fig. 2.
[0034] Fig. 3 illustrates a driving method for an electro-optical device which includes
the circuit shown in Fig. 1 and the pixel arrangement shown in Fig. 2 according to
an embodiment of the present invention. A first scanning signal SS(S1) is supplied
to the first scanning line (S1). A second scanning signal SS(S2) is supplied to the
second scanning line (S2). A third scanning signal SS(S3) is supplied to the third
scanning line (S3). A first data signal DS(D1) is supplied to the first data line
(D1). A second data signal DS(D2) is supplied to the second data line (D2). A third
data signal DS(D3) is supplied to the third data line (D3).
[0035] In this embodiment, the switching transistor (ST11), the driving transistor (D11),
and the reset transistor (RT11) are n-type, p-type, and p-type, respectively. Accordingly,
a high-potential scanning signal serves as an on-signal for causing the switching
signal to enter the conducting state. Then, a low-potential set signal indicated by
the hatched portions in Fig. 3 is supplied in accordance with the on-signal for the
switching transistor. According to this setting step, the driving transistor enters
the conducting state so as to cause the luminescent element to emit light. In contrast,
the low-potential scanning signal serves as an on-signal for the reset transistor.
According to this resetting step, a high potential is applied to the p-type driving
transistor from the power line via the reset transistor so as to cause the driving
transistor to enter the non-conducting state. Thus, the luminescence element enters
the non-luminescence state.
[0036] The luminescence periods E1, E2, and E3 are defined by the time interval between
the setting step and the resetting step. The ratio of the luminescence periods E1,
E2, and E3 is set to be about 1:2:4. As a result, eight gray-scale levels, such as
0, 1, 2, 3, 4, 5, 6, and 7, are obtained. In this embodiment, the set-reset operations
are sequentially performed such that the time interval between the setting step and
the resetting step is increased. However, the set-reset operations do not have to
be performed in this order, and it can be performed according to the circumstances
of the use or the specifications. It may take some time for the transistor or the
luminescent element to respond to the corresponding signal. Accordingly, as shown
in Fig. 3, the start time and the end time of the luminescence period may be displaced
from the start of the setting step and the start of the resetting step, respectively.
In Fig. 3, the period for which the on-signal for the switching transistor is supplied
coincides with the period for which the set signal is supplied. However, depending
on the circumstances of the use or the specifications, the on-signal does not always
have to coincide with the set signal.
[0037] Fig. 4 illustrates the current characteristics of the luminescent element according
to an embodiment of the present invention. The horizontal axis represents the control
potential (Vsig) supplied to the gate electrode of the driving transistor, and the
vertical axis designates the current value (IIep) of the organic electro-luminescence
element. The current value and the luminance of the organic electro-luminescence element
are substantially proportional to each other. Thus, it can be considered that the
vertical axis also indicates the luminance. In this embodiment, it is preferable that
the organic electro-luminescence element is unambiguously controlled to be in either
the on state or the off state. When the electro-luminescence element is unambiguously
in the on state or in the off state, the current value (IIep) is substantially constant
even if the transistor characteristics are changed. Thus, the current value of the
luminescent element does not change, and accordingly, the luminance substantially
becomes uniform. Therefore, the image quality can be uniform.
[0038] Fig. 5 illustrates a manufacturing process for a thin-film transistor for use in
the electro-optical device according to an embodiment of the present invention. Amorphous
silicon is first formed on a glass substrate 1 by PECVD using SiH
4 or by LPCVD using Si
2H
6. The amorphous silicon is poly-crystallized by a laser, such as an excimer laser,
or by solid-phase growth, thereby forming a poly-crystalline silicon layer 2 (Fig.
5(a)). After the poly-crystalline silicon layer 2 is patterned, a gate insulating
film 3 is formed, and gate electrodes 4 are further formed (Fig. 5(b)). An impurity,
such as phosphorus or boron, is implanted into the poly-crystalline silicon layer
2 by using the gate electrodes 4 according to a self-alignment process so as to form
MOS transistors 5a and 5b. The MOS transistors 5a and 5b are a p-type transistor and
an n-type transistor, respectively. The reset transistor is not shown in Fig. 5. After
a first interlayer insulating film 6 is formed, contact holes are formed, and a source
electrode and a drain electrode 7 are formed (Fig. 5(c)). Then, after a second interlayer
insulating film 8 is formed, contact holes are formed, and a pixel electrode 9 comprising
ITO is formed (Fig. 5(d)).
[0039] Fig. 6 illustrates a manufacturing process for pixels used in the electro-optical
device according to an embodiment of the present invention. First, an adhesion layer
10 is formed, and an opening corresponding to a luminescent region is formed. An interlayer
11 is then formed, and an opening is formed (Fig. 6(a)). Then, the wettability of
the substrate surface is controlled by performing plasma processing using, for example,
oxygen plasma or CF
4 plasma. Subsequently, an electron-hole implantation layer 12 and a luminescent layer
13 are formed by a liquid-phase process, such as a spin coating, squeegee, or ink-jet
process, or a vacuum process, such as sputtering or deposition. An anode 14 containing
metal, such as aluminum, is then formed. Finally, a sealing layer 15 is formed. Thus,
an organic electro-luminescence element is manufactured (Fig. 6(b)). The roles of
the adhesion layer 10 are to improve the adhesion between the substrate and the interlayer
11 and also to obtain an accurate luminescence area. The roles of the interlayer 11
are to reduce the parasitic capacitance by separating the gate electrodes 4, the source
electrodes, and the drain electrodes 7 from the anode 14, and also to perform precise
patterning by controlling the surface wettability when forming the electron-hole implantation
layer 12 and the luminescent layer 13 by a liquid-phase process.
[0040] Some examples of electronic apparatuses using the above-described electro-optical
device are described below. Fig. 7 is a perspective view illustrating the configuration
of a mobile personal computer to which the above-described electro-optical device
is applied. In Fig. 7, a personal computer 1100 includes a main unit 1104 provided
with a keyboard 1102, and a display unit 1106. The display unit 1106 is provided with
the above-described electro-optical device 100.
[0041] Fig. 8 is a perspective view illustrating a configuration of a cellular telephone
having a display unit to which the aforementioned electro-optical device 100 is applied.
In Fig. 8, a cellular telephone 1200 includes, not only a plurality of operation buttons
1202, but also the above-described electro-optical device 100 together with an earpiece
1204 and a mouthpiece 1206.
[0042] Fig. 9 is a perspective view illustrating a configuration of a digital still camera
having a finder to which the above-described electro-optical device 100 is applied.
Fig. 9 also schematically illustrates the connection of the digital still camera with
external devices. In a regular camera, a film is exposed to light by an optical image
of a subject. In a digital still camera 1300, however, an optical image of a subject
is photoelectrically converted by an image pickup device, such as a CCD (Charge Coupled
Device), so as to generate an imaging signal. On the rear surface of a casing 1302
of the digital still camera 1300, the aforementioned electro-optical device 100 is
provided to display the subject based on the imaging signal obtained by the CCD. That
is, the electro-optical device 100 serves as a finder for displaying the subject.
On the observation side (on the reverse surface in Fig. 9) of the casing 1302, a photodetector
unit 1304 including an optical lens and a CCD is disposed.
[0043] A photographer checks the subject displayed on the electro-optical device 100 and
presses a shutter button 1306. Then, an imaging signal obtained by the CCD is transferred
to and stored in a memory of a circuit board 1308. In this digital still camera 1300,
a video signal output terminal 1312 and a data communication input/output terminal
1314 are provided on the side surface of the casing 1302. Then, as shown in Fig. 9,
a television monitor 1430 and a personal computer 1440 are connected to the video
signal output terminal 1312 and the data communication input/output terminal 1314,
respectively, as required. The imaging signal stored in the memory of the circuit
board 1308 is output to the television monitor 1430 or the personal computer 1440
by a predetermined operation.
[0044] Electronic apparatuses to which the electro-optical device 100 of the present invention
is applicable include, not only the personal computer shown in Fig. 7, the cellular
telephone shown in Fig. 8, and the digital still camera shown in Fig. 9, but also
a liquid crystal television, a view-finder-type or direct-view-type video cassette
recorder, a car navigation system, a pager, an electronic diary, a calculator, a word
processor, a workstation, a videophone, a POS terminal, a device provided with a touch
panel, for example. It is needless to say that the above-described electro-optical
device 100 is applicable to the display units of these electronic apparatuses.
1. A driving method for an electro-optical device which comprises, at an intersection
of a scanning line and a data line, an electro-optical element, a driving transistor
for driving the electro-optical element, a switching transistor for controlling the
driving transistor, and a reset transistor for resetting the driving transistor to
a non-conducting state, the driving method comprising:
a setting step of supplying an on-signal for causing the switching transistor to be
in an on-state to the switching transistor via the scanning line, and of supplying
a set signal for selecting a conducting state or a non-conducting state of the driving
transistor to the driving transistor via the data line and the switching transistor
in accordance with a period for which the on-signal is supplied; and
a resetting step of supplying an on-signal for causing the reset transistor to be
an on-state to the reset transistor via the scanning line so as to reset the driving
transistor to the non-conducting state.
2. A driving method for an electro-optical device according to claim 1, wherein the electro-optical
device further comprises a power line for supplying a current to the electro-optical
element via the driving transistor, and one end of the reset transistor is connected
to the power line.
3. A driving method for an electro-optical device according to claim 1 or 2, wherein
a conductivity type of the switching transistor and a conductivity type of the reset
transistor are different from each other.
4. A driving method for an electro-optical device according to any one of claims 1 to
3, wherein conductivity types of the switching transistor, the driving transistor,
and the reset transistor are respectively n-type, p-type, and p-type.
5. A driving method for an electro-optical device according to claim 4, wherein a voltage
VS corresponding to the on-signal for causing the switching transistor to be in the
on-state, a voltage VR corresponding to the on-signal for causing the reset transistor
to be in the on-state, and a voltage V0 corresponding to an off-signal for causing
the switching transistor and the reset transistor to be in an off-state satisfy a
relational expression: VS > V0 > VR.
6. A driving method for an electro-optical device according to claim 5, wherein the voltage
VS, the voltage VR, and the voltage V0 satisfy relational expressions: -VS ≈ VR, and
V0 = 0 V (voltages).
7. A driving method for an electro-optical device according to any one of claims 1 to
6, wherein, while the switching transistor is in the on-state, the reset transistor
is in the off-state, and, while the reset transistor is in the on-state, the switching
transistor is in the off-state.
8. A driving method for an electro-optical device according to any one of claims 1 to
7, wherein a gray-scale is obtained by setting a time interval between the setting
step and the resetting step.
9. A driving method for an electro-optical device according to any one of claims 1 to
8, wherein a gray-scale is obtained by performing a plurality of set-reset operations,
each set-reset operation comprising the setting step and the resetting step.
10. A driving method for an electro-optical device according to claim 9, wherein the time
interval between the setting step and the resetting step is different for each of
the plurality of set-reset operations.
11. A driving method for an electro-optical device according to claim 9 or 10, wherein
the time interval between the setting step and the resetting step for each of the
plurality of set-reset operations is completely different fromthe others, and the
ratio of time intervals for the plurality of set-reset operations is about 1:2: ..
:2n (n is an integer of one or more) based on the minimum time interval.
12. A driving method for an electro-optical device according to any one of claims 1 to
11, wherein the set signal is a signal for setting the driving transistor to the conducting
state rather than the signal for selecting the conducting state or the non-conducting
state of the driving transistor.
13. A driving method for an electro-optical device according to any one of claims 1 to
12, wherein the electro-optical element comprises an organic electro-luminescence
element.
14. An electro-optical device driven by the driving method set forth in any one of claims
1 to 13.
15. An electro-optical device including, at an intersection of a scanning line and a data
line, an electro-optical element, a driving transistor for driving the electro-optical
element, a switching transistor for controlling the driving transistor, and a reset
transistor for resetting the driving transistor to a non-conducting state, the electro-optical
device comprising at least one drive circuit for generating a signal for setting the
switching transistor and the reset transistor to be in an on-state or an off-state,
and for generating a signal for setting the driving transistor in accordance with
the signal for setting the switching transistor to be in the on-state.
16. An electro-optical device including, at an intersection of a scanning line and a data
line, an electro-optical element, a driving transistor for driving the electro-optical
element, a switching transistor for controlling the driving transistor, and a reset
transistor for resetting the driving transistor to a non-conducting state, the electro-optical
device comprising:
a scanning line driver for supplying a signal for setting the switching transistor
and the reset transistor to be in an on-state or an off-state to the scanning line;
and
a data line driver for supplying a signal for setting the driving transistor to the
data line in accordance with an operation of the scanning line driver.
17. An electro-optical device comprising, at an intersection of a scanning line and a
data line, an electro-optical element, a driving transistor for driving the electro-optical
element, a switching transistor for controlling the driving transistor, and a reset
transistor for resetting the driving transistor to a non-conducting state,
wherein an on-signal for performing a setting step of setting the electro-optical
element is supplied to the switching transistor via the scanning line, and an on-signal
for performing a resetting step of resetting the electro-optical element is supplied
to the reset transistor via the scanning line.
18. An electro-optical device according to any one of claims 15 to 17, wherein the electro-optical
device further comprises a power line for supplying a current to the electro-optical
element via the driving transistor, and one end of the reset transistor is connected
to the power line.
19. An electro-optical device according to any one of claims 15 to 18, wherein the electro-optical
element comprises an organic electro-luminescence element.
20. An electronic apparatus in which the electro-optical device set forth in any one of
claims 14 to 19 is installed.