SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD - Patent 1196947

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EP 1 196 947 A1

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(43)	Date of publication:
	17.04.2002 Bulletin 2002/16

(21)	Application number: 00919501.7

(22)	Date of filing: 21.03.2000

(51)	International Patent Classification (IPC)⁷: H01L 21/31, H01L 21/00, H01L 21/26, H01L 21/38

(86)	International application number:
	PCT/US0007/479

(87)	International publication number:
	WO 0171/791 (27.09.2001 Gazette 2001/39)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

(71)	Applicant: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
	New York,New York 10027 (US)

(72)	Inventors:
	IM, James, S. New York, NY 10025 (US) SPOSILI, Robert, S. New York, NY 10027 (US) CROWDER, Mark, A. New York, NY 10027 (US)

(74)	Representative: Lucas, Brian Ronald
	Lucas & Co.135 Westhall Road WarlinghamSurrey CR6 9HJ WarlinghamSurrey CR6 9HJ (GB)

(54)	SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD