METHOD OF PRODUCING RELAXED SILICON GERMANIUM LAYERS - Patent 1214735

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EP 1 214 735 A1

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(43)	Date of publication:
	19.06.2002 Bulletin 2002/25

(21)	Application number: 00974128.1

(22)	Date of filing: 19.09.2000

(51)	International Patent Classification (IPC)⁷: H01L 21/20

(86)	International application number:
	PCT/US0040/938

(87)	International publication number:
	WO 0122/482 (29.03.2001 Gazette 2001/13)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

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Priority:

20.09.1999 US 154851 P

(71)	Applicant: Amberwave Systems Corporation
	Woburn, MA 01801 (US)

(72)	Inventor:
	FITZGERALD, Eugene, A. Windham, NH 02652 (US)

(74)	Representative: Hammond, Andrew David et al
	Ström & Gulliksson IP ABSjöporten 4 417 64 Göteborg 417 64 Göteborg (SE)

(54)	METHOD OF PRODUCING RELAXED SILICON GERMANIUM LAYERS