| (19) |
 |
|
(11) |
EP 1 214 864 B1 |
| (12) |
EUROPEAN PATENT SPECIFICATION |
| (45) |
Mention of the grant of the patent: |
|
04.06.2003 Bulletin 2003/23 |
| (22) |
Date of filing: 06.09.2000 |
|
| (51) |
International Patent Classification (IPC)7: H04R 19/00 |
| (86) |
International application number: |
|
PCT/DK0000/491 |
| (87) |
International publication number: |
|
WO 0101/9134 (15.03.2001 Gazette 2001/11) |
|
| (54) |
SILICON-BASED SENSOR SYSTEM
SILIKON BASIERTE SENSOR-SYSTEME
SYSTEME DE CAPTEUR A BASE DE SILICIUM
|
| (84) |
Designated Contracting States: |
|
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
| (30) |
Priority: |
06.09.1999 DK 125499 07.09.1999 US 391628 12.05.2000 US 570434
|
| (43) |
Date of publication of application: |
|
19.06.2002 Bulletin 2002/25 |
| (73) |
Proprietor: SonionMEMS A/S |
|
2800 Kongens Lyngby (DK) |
|
| (72) |
Inventors: |
|
- MÜLLENBORN, Matthias
DK-2800 Lyngby (DK)
- KUHMANN, Jochen, F.
DK-2400 Copenhagen NV (DK)
- SCHEEL, Peter, U.
DK-2820 Gentofte (DK)
|
| (74) |
Representative: Frederiksen, Jakob Pade et al |
|
Plougmann & Vingtoft A/S
Sundkrogsgade 9
P.O. Box 831 2100 Copenhagen O 2100 Copenhagen O (DK) |
| (56) |
References cited: :
US-A- 4 533 795 US-A- 5 856 914 US-A- 5 889 872
|
US-A- 5 490 220 US-A- 5 870 482
|
|
| |
|
|
- KRISTIANSEN L: "Forste Silicium-baserede Mikro-mikrofon" NYHEDSMAGASINET ELEKTRONIK
& DATA, no. 3, 1998, pages 4-8, XP002901441
|
|
| |
|
| Note: Within nine months from the publication of the mention of the grant of the European
patent, any person may give notice to the European Patent Office of opposition to
the European patent
granted. Notice of opposition shall be filed in a written reasoned statement. It shall
not be deemed to
have been filed until the opposition fee has been paid. (Art. 99(1) European Patent
Convention).
|
FIELD OF INVENTION
[0001] The present invention relates to a sensor system comprising a carrier member, a transducer
element and an electronic device. The present invention relates in particular to condenser
microphone systems assembled using flip-chip technology. The present invention further
relates to condenser microphone systems adapted for surface mounting on e.g. printed
circuit boards (PCB's).
BACKGROUND OF THE INVENTION
[0002] In the hearing instrument and mobile communication system industry, one of the primary
goals is to make components of small sizes while still maintaining good electroacoustic
performance and operability giving good user friendliness and satisfaction. Technical
performance data include sensitivity, noise, stability, compactness, robustness and
insensitivity to electromagnetic interference (EMI) and other external and environmental
conditions. In the past, several attempts have been made to make microphone systems
smaller while maintaining or improving their technical performance data.
[0003] Another issue within these component industries concerns the ease of integration
into the complete system.
[0004] EP 561 566 discloses a solid state condenser microphone having a field effect transistor
(FET) circuitry and a cavity or sound inlet on the same chip. The techniques and processes
for manufacturing a FET circuitry are quite different from the techniques and processes
used in manufacturing transducer elements. Consequently, the transducer element and
FET system disclosed in EP 561 566 requires two (or possibly more) separate stages
of production which by nature makes the manufacturing more complicated and thereby
also more costly.
[0005] The development of hybrid microelectromechanical systems (MEMS) has progressed significantly
over the last years. This has primarily to do with the development of appropriate
techniques for manufacturing such systems. One of the advantages of such hybrid systems
relates to the size with which relative complicated systems involving mechanical microtransducers
and specially designed electronics may be manufactured.
[0006] US 5,889,872 discloses a hybrid system consisting of a silicon microphone and an
integrated circuit chip mounted onto it using wire bonding for the electrical connection.
This solution has the disadvantage of requiring additional protection and space for
the bonding wires.
[0007] US 5,856,914 discloses a flip-chip mounted micromechanical device, such as a condenser
microphone, where part of the carrier upon which the microdevice is mounted, forms
part of the final system. A disadvantage of this system is the fact that the micromechanical
device may not be tested prior to the mounting on the carrier. Another disadvantage
of the disclosed system relates to the chosen materials. The micromechanical device
is comprised of Si whereas the carrier is made of a PCB or a ceramic material. Differences
in thermal expansion coefficients may easily complicate the integration of such different
materials.
[0008] The article "The first silicon-based micro-microphone" published in the Danish journal
Elektronik og Data, No. 3, p. 4-8, 1998 discloses how silicon-based microphone systems
can be designed and manufactured. The article discloses a three-layer microphone system
where a transducer element is flip-chip mounted on an intermediate layer connecting
the transducer element to an electronic device, such as an application specific integrated
circuit (ASIC). The transducer element comprises a movable diaphragm and a substantially
stiff back plate. On the opposite side of the transducer element a silicon-based structure
forming a back chamber is mounted. It is worth noting that in order for the microphone
system to be electrically connected to the surroundings wire bonding or direct soldering
is required.
[0009] It is an object of the present invention to provide a sensor system where the different
elements forming the sensor system are flip-chip mounted, applying standard batch-oriented
techniques.
[0010] It is a further object of the present invention to provide a fully functional and
encapsulated sensor system that can be operated independently of its final position
on e.g. a PCB.
[0011] It is a still further object of the present invention to provide a fully functional
and encapsulated sensor system that can be tested prior to the final mounting.
[0012] It is a still further object of the present invention to provide a sensor system
suitable for mounting on e.g. PCB's using flip-chip or surface mount technologies
and thereby avoid wire bonding or complicated single-chip handling.
[0013] It is a still further object of the present invention to provide a sensor system
where the distance between the transducer element and the electronic circuit is reduced
so as to reduce parasitics and space consumption.
SUMMARY OF THE INVENTION
[0014] The above-mentioned objects are complied with by providing, in a first aspect, a
sensor system comprising
- a carrier member having a first surface, said first surface holding a first and a
second group of contact elements,
- a transducer element comprising an active member, said active member being electrically
connected to at least one contact element of the transducer element, and
- an electronic device comprising an integrated circuit having at least one contact
element,
characterised in that
- at least one contact element of the transducer element is aligned with one of the
contact elements of the first group of the carrier member so as to obtain electrical
contact between the active member of the transducer element and the carrier member,
and that
- at least one contact element of the electronic device is aligned with one of the contact
elements of the second group of the carrier member so that the transducer element
and the electronic device are positioned adjacently on the first surface of the carrier
member, and so as to obtain electrical contact between the integrated circuit and
the carrier member, and that
- at least one of the contact elements of the first group is electrically connected
to at least one of the contact elements of the second group so as to obtain electrical
contact between the active member of the transducer element and the integrated circuit
of the electronic device.
[0015] The transducer element may in principle be any kind of transducer, such as a pressure
transducer, an accelerometer or a thermometer.
[0016] In order for the sensor system to communicate with the surroundings the carrier member
may further comprise a second surface, said second surface holding a plurality of
contact elements. At least one of the contact elements of the first or second group
is electrically connected to one of the contact elements being held by the second
surface. The first and second surfaces may be substantially parallel and opposite
each other.
[0017] The carrier member and the transducer element may be based on a semiconductor material,
such as Si. In order to decouple thermal stresses, the carrier member, the transducer
element and the electronic device may be based on the same semiconductor material.
Again, the material may be Si.
[0018] In order to form a back chamber for microphone applications the carrier member may
further comprise an indentation aligned with the active member of the transducer element.
Also for microphone applications the active member of the transducer element may comprise
a capacitor being formed by a flexible diaphragm and a substantially stiff back plate
in combination. Furthermore, the transducer element further comprises a cavity or
sound inlet. The bottom of the cavity may be defined or formed by the active member
of the transducer element. The flexible diaphragm and the substantially stiff back
plate may be electrically connected to a first and a second contact element of the
transducer element, respectively, in order to transfer the signal received by the
transducer element to the carrier member.
[0019] The integrated circuit may be adapted for signal processing. This integrated circuit
may be an ASIC.
[0020] In order to obtain directional sensitivity the sensor may further comprise an opening
or sound inlet between the second surface of the carrier member and the indentation.
In order to protect the transducer element against e.g. particles or humidity an outer
surface of the sensor is at least partly protected by a lid. The lid and the active
member of the transducer element may define an upper and lower boundary of the cavity,
respectively. Furthermore, at least one outer surface of the sensor system may hold
a conductive layer. The conductive layer may comprise a metal layer or a conductive
polymer layer.
[0021] The contact elements may comprise solder materials, such as a Sn, SnAg, SnAu or SnPb.
Furthermore, the sensor system may comprise sealing means for hermetically sealing
the transducer element.
[0022] In a second aspect, the present invention relates to a sensor system comprising
- a carrier member having a first surface, said first surface holding a first, a second
and a third group of contact elements,
- a first transducer element comprising an active member, said active member being electrically
connected to at least one contact element of the first transducer element,
- a second transducer element comprising an active member, said active member being
electrically connected to at least one contact element of the second transducer element,
- an electronic device comprising an integrated circuit having at least one contact
element,
characterised in that
- at least one contact element of the first transducer element is aligned with one of
the contact elements of the first group of the carrier member so as to obtain electrical
contact between the active member of the first transducer element and the carrier
member, and that
- at least one contact element of the second transducer element is aligned with one
of the contact elements of the second group of the carrier member so that the first
and second transducer elements are positioned adjacently on the first surface of the
carrier member, and so as to obtain electrical contact between the active member of
the second transducer element and the carrier member, and that
- at least one contact element of the electronic device is aligned with one of the contact
elements of the third group of the carrier member so that the electronic device is
positioned adjacent to the first respective second transducer element on the first
surface of the carrier member, and so as to obtain electrical contact between the
integrated circuit and the carrier member, and that
- at least one of the contact elements of the first group is electrically connected
to at least one of the contact elements of the third group, and that at least one
of the contact elements of the second group is electrically connected to at least
one of the contact elements of the third group so as to obtain electrical contact
between the active member of the first transducer element and the integrated circuit,
and between the active member of second transducer element and the integrated circuit.
[0023] The sensor according to the second aspect may be suitable for directional sensing,
such as for directional sensitive pressure transducers.
[0024] The carrier member, such as a Si-based carrier member, may further comprise a second
surface holding a plurality of contact elements. In order to obtain electrical connection
to the second surface at least one of the contact elements of the first, second or
third group may be electrically connected to one of the contact elements being held
by the second surface. The first and second surfaces may be substantially parallel
and opposite each other. Preferably, the transducer elements and the electronic device
are Si-based.
[0025] The carrier member may further comprise a first and a second indentation, the first
indentation being aligned with the active member of the first transducer element,
the second indentation being aligned with the active member of the second transducer
element. The first and second indentations act as back chambers.
[0026] Each of the first and second transducer elements may further comprise a cavity, the
bottom of said cavities being defined by the active members of the first and second
transducer elements.
[0027] In order to measure e.g. pressure variations each of the active members of the first
and second transducer elements may comprise a capacitor, said capacitor being formed
by a flexible diaphragm and a substantially stiff back plate in combination. The flexible
diaphragm and the substantially stiff back plate may be electrically connected to
the contact elements of the respective transducer elements.
[0028] Each of the first and second transducer elements further may comprise a lid for protecting
the transducer elements. The lids and the active members of the first and second transducer
elements may be positioned in such a way that they define an upper and a lower boundary
of the respective cavities.
[0029] At least part of an outer surface of the sensor system may hold a conductive layer.
This conductive layer may be a metal layer or a conductive polymer layer. The contact
elements may comprise a solder material, such as Sn, SnAg, SnAu or SnPb.
[0030] Solid state silicon-based condenser microphone systems according to the invention
are suitable for batch production. The combination of the different elements forming
the microphone system is more flexible compared to any other system disclosed in the
prior art. The present invention makes it possible to provide a very well defined
interface to the environment, e.g. by an opening on one side of the system. This opening
can be covered by a film or filter preventing dust, moisture and other impurities
from contaminating or obstructing the characteristics of the microphone. Electrical
connections between the different elements of the microphone system are established
economically and reliably via a silicon carrier using flip-chip technology.
[0031] The present invention uses an integrated electronic circuit chip, preferably an ASIC
which may be designed and manufactured separately and independent of the design and
manufacture of the transducer element of the microphone. This is advantageous since
the techniques and processes for manufacturing integrated electronic circuit chips
are different from those used in manufacturing transducer elements, and each production
stage can thus be optimised independently. Furthermore, testing of transducer elements
and ASICs may be performed on wafer level.
[0032] The complete sensor system can be electrically connected to an external substrate
by surface mount technology with the contacts facing one side of the system that is
not in conflict with the above-mentioned interface to the environment. This allows
the user to apply simple and efficient surface mount techniques for the assembly of
the overall system.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] The present invention will now be explained in further detail with reference to the
accompanying drawings, where
Figure 1 is an illustration of a general application of a silicon-based sensor system,
Figure 2 is an illustration of a general application of a silicon-based sensor system
with a lid,
Figure 3 is an illustration of a microphone application of the silicon-based sensor
system,
Figure 4 is an illustration of an encapsulated microphone application,
Figure 5 is a close up of a lateral feed-through and sealing ring,
Figure 6 is an illustration of a directional microphone application of the silicon-based
sensor system, and
Figure 7 is an illustration of a second directional microphone application of the
silicon-based sensor system.
DETAILED DESCRIPTION OF THE INVENTION
[0034] The process used for manufacturing the different elements of the sensor system involves
mainly known technologies within the field of microtechnology.
[0035] In Figure 1 a silicon carrier substrate 2 containing one or more vertical etched
feed-through holes 20 is shown. The silicon carrier substrate 2, which is bulk crystalline
silicon, has solder bumps 8, 22 on a first surface and a second surface, respectively.
The electrical signal is carried from the first surface to the second surface via
feed-through lines 23. On the first surface, one or more transducer elements 1 are
flip-chip mounted onto the silicon carrier substrate 2, connected and fixed by a first
group of solder bumps 8. Also on the first surface, one or more electronic devices,
such as integrated circuit chips 3, are flip-chip mounted onto the silicon carrier
substrate 2, connected and fixed by a second group of solder bumps 8. The solder bump
8 material is typically Sn, SnAg, SnAu, or SnPb, but other metals could also be used.
[0036] A solder sealing ring 9 provides sealing for the transducer element 1. In this case,
feed-through lines 23 are used for carrying the electrical signals from the transducer
element 1 under the sealing ring 9 to the electronic device 3. This is shown in greater
detail in Figure 5. The signal can also be carried to the electronic circuit by other
conductive paths.
[0037] Electrical conductive paths 23 are also formed through the carrier e.g. by etching
holes 20 and subsequent metallization. The etching can be done by wet chemical etching
or dry plasma etching techniques. This path 23 is called a vertical feed-through and
can be used for carrying the electrical signal from either the transducer 1 or the
electronic circuit 3 to the second surface of the carrier.
[0038] The second surface is supplied with solder bumps 22 for surface mounting onto e.g.
a PCB or another carrier.
[0039] Figure 2 shows a package like the one shown in Figure 1, but in this embodiment the
electronic device 3 has been connected and fixed by one group of solder bumps 8 as
well as other means such as underfill or glue 21. Furthermore, the package is protected
by a lid 5, which is fixed to the flip-chip mounted transducer element 1 or electronic
device 3 or both. The lid 5 has an opening 4 providing a well-determined access to
the environment, e.g. a sound-transmitting grid or filter as protection against particles
or humidity for a microphone. The lid can be made separately, e.g. from metal or polymer
by punching or injection moulding, respectively.
[0040] In Figure 3 and 4 a system for microphone applications is shown. In these embodiments
the transducer element 1 is a microphone and a back chamber 11 has been etched into
the silicon substrate 2. The back chamber is etched into the silicon carrier by wet
etching processes using reactants as KOH, TMAH or EDP or by dry etching processes
such as reactive ion etching. The cavity 11 can be etched in the same step as the
feed-through hole 20.
[0041] The difference between Figure 3 and 4 is that the system, in Figure 4, has been encapsulated
with a filter 5 for providing EMI-shielding. The EMI-shield 16 is a conductive polymer
layer, such as silver epoxy or a metal layer, such as electroplated or evaporated
Cu or Au. Furthermore, the integrated circuit chip 3 and the filter 5 in Figure 4
have been connected and fixed with additional means such as underfill or glue 21.
[0042] The function of the microphone is as follows. The opening 4 functions as a sound
inlet, and ambient sound pressure enters through the filter 5 covering the opening
4 to the cavity 10 functioning as a front chamber for the microphone. The sound pressure
deflects the diaphragm 12, which causes the air between the diaphragm 12 and the back
plate 13 to escape through the perforations 19.
[0043] The diaphragm may be designed and manufactured in different ways. As an example the
diaphragm may be designed as a three-layer structure having two outer layers comprising
silicon nitride whereas the intermediate layer comprises polycrystalline silicon.
The polycrystalline silicon comprised in the intermediate layer is doped with either
boron (B) or phosphorous (P). The back plate also comprises B- or P-doped polycrystalline
silicon and silicon nitride. The cavity 11 functions as a back chamber for the microphone.
[0044] When the diaphragm 12 is deflected in response to the incident sound pressure, the
electrical capacity of the electrical capacitor formed by the diaphragm 12 and the
back plate 13 will vary in response to the incident sound pressure. The circuit on
the integrated circuit chip 3 is electrically connected to the diaphragm 12 and the
back plate 13 through solder bumps 8. The circuit is designed to detect variations
in the electrical capacity of the capacitor formed by the diaphragm 12 and the back
plate 13. The circuit has electrical connections via the solder bumps 8 and the vertical
feed-through lines 23 to the solder bumps 22 for electrically connecting it to a power
supply and other electronic circuitry in e.g. a hearing instrument.
[0045] When operating the capacitor formed by the diaphragm 12 and the back plate 13, the
back plate 13 is connected to a DC power supply in order to charge the back plate
13. When the capacitance varies due to distance variation between the diaphragm 12
and the back plate 13 in response to a varying sound pressure, an AC voltage is superimposed
on top of the applied DC level. The amplitude of the AC voltage is a measured for
the change in capacitance and thus also a measure for the sound pressure experienced
by the diaphragm.
In Figure 5 a close-up of a lateral feed-through line 24 and sealing ring 9 is shown.
The feed-through 24 is electrically insulated from the sealing ring 9 and the substrate
2 by insulating layers 25. Insulating layers 25 similarly insulate the solder bumps
8 of the transducer 1 from the substrate 2. The solder bumps 8 of the transducer 1
and the solder bumps 8 of the circuit chip 3 are electrically connected via the feed-through
line 24.
[0046] In Figure 6, a microphone similar to the one in Figure 3 is shown. However, an opening
24 has been introduced in the backchamber 11. The opening 24 causes a membrane deflection
that reflects the pressure gradient over the membrane resulting in a directional sensitivity
of the microphone.
[0047] In Figure 7, a microphone similar to the one in Figure 3 is shown. However, an additional
transducer element has been added so that the microphone now uses two transducer elements
1, both containing a membrane 12 and a backplate 13. Both transducer elements are
connected to the carrier member 3 by solder bumps 8 and seal ring 9 with an indentation
11 for each transducer element. The two transducer elements allow to measure the phase
difference of an impinging acoustical wave resulting in a directional sensitivity
of the microphone.
[0048] It will be evident for the skilled person to increase the number of sensing elements
from two (as shown in Fig. 7) to an arbitrary number of sensing elements - e.g. arranged
in an array of columns and rows.
1. A sensor system comprising
- a carrier member (2) having a first surface, said first surface holding a first
and a second group of contact elements (8),
- a transducer element (1) comprising an active member, said active member being electrically
connected to at least one contact element of the transducer element (1), and
- an electronic device (3) comprising an integrated circuit having at least one contact
element,
characterised in that
- at least one contact element of the transducer element (1) is aligned with one of
the contact elements (8) of the first group of the carrier member (2) so as to obtain
electrical contact between the active member of the transducer element (1) and the
carrier member (2), and that
- at least one contact element of the electronic device (3) is aligned with one of
the contact elements (8) of the second group of the carrier member (2) so that the
transducer element (1) and the electronic device (3) are positioned adjacently on
the first surface of the carrier member (2), and so as to obtain electrical contact
between the integrated circuit and the carrier member (2), and that
- at least one of the contact elements (8) of the first group is electrically connected
to at least one of the contact elements (8) of the second group so as to obtain electrical
contact between the active member of the transducer element (1) and the integrated
circuit of the electronic device (3).
2. A sensor system according to claim 1, wherein the carrier member (2) further comprises
a second surface, said second surface holding a plurality of contact elements, wherein
at least one of the contact elements of the first or second group is electrically
connected to one of the contact elements being held by the second surface.
3. A sensor system according to claim 2, wherein the first and second surfaces are substantially
parallel and opposite each other.
4. A sensor system according to any of claims 1-3, wherein the carrier member (2) is
a Si-based carrier member.
5. A sensor system according to any of claims 1-4, wherein the carrier member (2) further
comprises an indentation (11), said indentation (11) being aligned with the active
member of the transducer element.
6. A sensor system according to any of claims 1-5, wherein the transducer element further
comprises a cavity (10), the active member defining the bottom of said cavity (10).
7. A sensor system according to claim 5, further comprising an opening (24) between the
second surface of the carrier member (2) and the indentation (11).
8. A sensor system according to any of the preceding claims, wherein the transducer element
(1) is Si-based.
9. A sensor system according to any of the preceding claims, wherein the carrier member
(2), the transducer element (1), and the electronic device (3) are Si-based.
10. A sensor system according to claim 1, wherein the active member of the transducer
element comprises a capacitor, said capacitor being formed by a flexible diaphragm
(12) and a substantially stiff back plate (13) in combination.
11. A sensor system according to claim 6, wherein the transducer element (1) further comprises
a lid (5), the lid (5) and the active member of the transducer element (1) defining
an upper and a lower boundary of the cavity (10).
12. A sensor system according to any of the preceding claims, wherein at least part of
an outer surface of the sensor system holds a conductive layer (16).
13. A sensor system according to claim 12, wherein the conductive layer comprises a metal
layer.
14. A sensor system according to claim 12, wherein the conductive layer comprises a conductive
polymer layer.
15. A sensor system according to any of the preceding claims, wherein the contact elements
comprise a solder material, such as Sn, SnAg, SnAu or SnPb.
16. A sensor system according to claim 6, further comprising sealing means for hermetically
sealing the transducer element.
17. A sensor system comprising
- a carrier member having a first surface, said first surface holding a first, a second
and a third group of contact elements,
- a first transducer element comprising an active member, said active member being
electrically connected to at least one contact element of the first transducer element,
- a second transducer element comprising an active member, said active member being
electrically connected to at least one contact element of the second transducer element,
- an electronic device comprising an integrated circuit having at least one contact
element,
characterised in that
- at least one contact element of the first transducer element is aligned with one
of the contact elements of the first group of the carrier member so as to obtain electrical
contact between the active member of the first transducer element and the carrier
member, and that
- at least one contact element of the second transducer element is aligned with one
of the contact elements of the second group of the carrier member so that the first
and second transducer elements are positioned adjacently on the first surface of the
carrier member, and so as to obtain electrical contact between the active member of
the second transducer element and the carrier member, and that
- at least one contact element of the electronic device is aligned with one of the
contact elements of the third group of the carrier member so that the electronic device
is positioned adjacent to the first respective second transducer element on the first
surface of the carrier member, and so as to obtain electrical contact between the
integrated circuit and the carrier member, and that
- at least one of the contact elements of the first group is electrically connected
to at least one of the contact elements of the third group, and that at least one
of the contact elements of the second group is electrically connected to at least
one of the contact elements of the third group so as to obtain electrical contact
between the active member of the first transducer element and the integrated circuit,
and between the active member of second transducer element and the integrated circuit.
18. A sensor system according to claim 17, wherein the carrier member further comprises
a second surface, said second surface holding a plurality of contact elements, wherein
at least one of the contact elements of the first, second or third group is electrically
connected to one of the contact elements being held by the second surface.
19. A sensor system according to claim 18, wherein the first and second surfaces are substantially
parallel and opposite each other.
20. A sensor system according to any of claims 17-19, wherein the carrier member is a
Si-based carrier member.
21. A sensor system according to any of claims 17-20, wherein the carrier member further
comprises a first and a second indentation, the first indentation being aligned with
the active member of the first transducer element, the second indentation being aligned
with the active member of the second transducer element.
22. A sensor system according to any of claims 17-21, wherein each of the first and second
transducer elements further comprises a cavity, the bottom of said cavities being
defined by the active members of the first and second transducer elements.
23. A sensor system according to any of claims 17-22, wherein the first and second transducer
elements are Si-based.
24. A sensor system according to any of claims 17-23, wherein the carrier member, the
first and second transducer elements, and the electronic device are Si-based.
25. A sensor system according to any of claims 17-24, wherein each of the active members
of the first and second transducer elements comprises a capacitor, said capacitor
being formed by a flexible diaphragm and a substantially stiff back plate in combination.
26. A sensor system according to any of claims 17-25, wherein each of the first and second
transducer elements further comprises a lid, wherein the lids and the active members
of the first and second transducer elements define an upper and a lower boundary of
the respective cavities.
27. A sensor system according to any of claims 17-26, wherein at least part of an outer
surface of the sensor system holds a conductive layer.
28. A sensor system according to claim 27, wherein the conductive layer comprises a metal
layer.
29. A sensor system according to claim 27, wherein the conductive layer comprises a conductive
polymer layer.
30. A sensor system according to any of claims 17-29, wherein the contact elements comprise
a solder material, such as Sn, SnAg, SnAu or SnPb.
1. Sensorsystem mit:
- einem Trägerglied (2) mit einer ersten Oberfläche, wobei diese erste Oberfläche
eine erste und eine zweite Gruppe von Kontaktelementen (8) hält;
- einem Wandlerelement (1), das ein aktives Glied aufweist, wobei dieses aktive Glied
mit mindestens einem Kontaktelement des Wandlerelements (1) elektrisch verbunden ist;
und
- einer elektronischen Vorrichtung (3), die eine integrierte Schaltung mit mindestens
einem Kontaktelement aufweist,
dadurch gekennzeichnet, daß
- mindestens ein Kontaktelement des Wandlerelements (1) mit einem der Kontaktelemente
(8) der ersten Gruppe des Trägerglieds (2) ausgerichtet ist, um einen elektrischen
Kontakt zwischen dem aktiven Glied des Wandlerelements (1) und dem Trägerglied (2)
zu erhalten; und daß
- mindestens ein Kontaktelement der elektronischen Vorrichtung (3) mit einem der Kontaktelemente
(8) der zweiten Gruppe des Trägerglieds (2) ausgerichtet ist, so daß das Wandlerelement
(1) und die elektronische Vorrichtung (3) benachbart auf der ersten Oberfläche des
Trägerglieds (2) positioniert sind, und um einen elektrischen Kontakt zwischen der
integrierten Schaltung und dem Trägerglied (2) zu erhalten; und daß
- mindestens eines der Kontaktelemente (8) der ersten Gruppe mit mindestens einem
der Kontaktelemente (8) der zweiten Gruppe elektrisch verbunden ist, um einen elektrischen
Kontakt zwischen dem aktiven Glied des Wandlerelements (1) und der integrierten Schaltung
der elektronischen Vorrichtung (3) zu erhalten.
2. Sensorsystem nach Anspruch 1, wobei das Trägerglied (2) ferner eine zweite Oberfläche
aufweist, wobei diese zweite Oberfläche mehrere Kontaktelemente hält, wobei mindestens
eines der Kontaktelemente der ersten oder zweiten Gruppe mit einem der von der zweiten
Oberfläche gehaltenen Kontaktelemente elektrisch verbunden ist.
3. Sensorsystem nach Anspruch 2, wobei die ersten und zweiten Oberflächen im wesentlichen
parallel und zueinander entgegengesetzt sind.
4. Sensorsystem nach einem der Ansprüche 1 bis 3, wobei das Trägerglied (2) ein Si-basiertes
Trägerglied ist.
5. Sensorsystem nach einem der Ansprüche 1 bis 4, wobei das Trägerglied (2) ferner eine
Einkerbung (11) aufweist, wobei diese Einkerbung (11) mit dem aktiven Glied des Wandlerelements
ausgerichtet ist.
6. Sensorsystem nach einem der Ansprüche 1 bis 5, wobei das Wandlerelement ferner einen
Hohlraum (10) aufweist und das aktive Glied den Boden dieses Hohlraums (10) begrenzt.
7. Sensorsystem nach einem Anspruch 5, das ferner eine Öffnung (24) zwischen der zweiten
Oberfläche des Trägerglieds (2) und der Einkerbung (11) aufweist.
8. Sensorsystem nach einem der vorhergehenden Ansprüche, wobei das Wandlerelement (1)
Si-basiert ist.
9. Sensorsystem nach einem der vorhergehenden Ansprüche, wobei das Trägerglied (2), das
Wandlerelement (1) und die elektronische Vorrichtung (3) Si-basiert sind.
10. Sensorsystem nach Anspruch 1, wobei das aktive Glied des Wandlerelements einen Kondensator
aufweist, wobei dieser Kondensator aus einer flexiblen Membran (12) in Verbindung
mit einer im wesentlichen starren Verstärkungsplatte (13) gebildet ist.
11. Sensorsystem nach Anspruch 6, wobei das Wandlerelement (1) ferner einen Deckel (5)
aufweist, wobei der Deckel (5) und das aktive Glied des Wandlerelements (1) eine obere
und eine untere Grenze des Hohlraums (10) definieren.
12. Sensorsystem nach einem der vorhergehenden Ansprüche, wobei zumindest ein Teil einer
äußeren Oberfläche des Sensorsystems eine leitende Schicht (16) hält.
13. Sensorsystem nach Anspruch 12, wobei die leitende Schicht eine Metallschicht aufweist.
14. Sensorsystem nach Anspruch 12, wobei die leitende Schicht eine leitende Polymerschicht
aufweist.
15. Sensorsystem nach einem der vorhergehenden Ansprüche, wobei die Kontaktelemente ein
Lötmaterial, wie Sn, SnAg, SnAu oder SnPb, aufweisen.
16. Sensorsystem nach Anspruch 6, das ferner eine Dichtungseinrichtung zum hermetischen
Verschließen des Wandlerelements aufweist.
17. Sensorsystem mit:
- einem Trägerglied mit einer ersten Oberfläche, wobei diese erste Oberfläche eine
erste, eine zweite und eine dritte Gruppe von Kontaktelementen hält;
- einem ersten Wandlerelement, das ein aktives Glied aufweist, wobei dieses aktive
Glied mit mindestens einem Kontaktelement des ersten Wandlerelements elektrisch verbunden
ist;
- einem zweiten Wandlerelement, das ein aktives Glied aufweist, wobei dieses aktive
Glied mit mindestens einem Kontaktelement des zweiten Wandlerelements elektrisch verbunden
ist; und
- einer elektronischen Vorrichtung, die eine integrierte Schaltung mit mindestens
einem Kontaktelement aufweist,
dadurch gekennzeichnet, daß
- mindestens ein Kontaktelement des ersten Wandlerelements mit einem der Kontaktelemente
der ersten Gruppe des Trägerglieds ausgerichtet ist, um einen elektrischen Kontakt
zwischen dem aktiven Glied des ersten Wandlerelements und dem Trägerglied zu erhalten;
und daß
- mindestens ein Kontaktelement des zweiten Wandlerelements mit einem der Kontaktelemente
der zweiten Gruppe des Trägerglieds ausgerichtet ist, so das erste und zweite Wandlerelement
benachbart auf der ersten Oberfläche des Trägerglieds positioniert sind, um einen
elektrischen Kontakt zwischen dem aktiven Glied des zweiten Wandlerelements und dem
Trägerglied zu erhalten; und daß
- mindestens ein Kontaktelement der elektronischen Vorrichtung mit einem der Kontaktelemente
der dritten Gruppe des Trägerglieds ausgerichtet ist, so daß die elektronische Vorrichtung
benachbart zum ersten bzw. zweiten Wandlerelement auf der ersten Oberfläche des Trägerglieds
positioniert ist, und um einen elektrischen Kontakt zwischen der integrierten Schaltung
und dem Trägerglied zu erhalten; und daß
- mindestens eines der Kontaktelemente der ersten Gruppe mit mindestens einem der
Kontaktelemente der dritten Gruppe elektrisch verbunden ist, und daß mindestens eines
der Kontaktelemente der zweiten Gruppe mit mindestens einem der Kontaktelemente der
dritten Gruppe elektrisch verbunden ist, um einen elektrischen Kontakt zwischen dem
aktiven Glied des ersten Wandlerelements und der integrierten Schaltung und zwischen
dem aktiven Glied des zweiten Wandlerelements und der integrierten Schaltung zu erhalten.
18. Sensorsystem nach Anspruch 17, wobei das Trägerglied ferner eine zweite Oberfläche
aufweist, wobei diese zweite Oberfläche mehrere Kontaktelemente hält, wobei mindestens
eines der Kontaktelemente der ersten, zweiten oder dritten Gruppe mit einem der von
der zweiten Oberfläche gehaltenen Kontaktelemente elektrisch verbunden ist.
19. Sensorsystem nach Anspruch 18, wobei die ersten und zweiten Oberflächen im wesentlichen
parallel und zueinander entgegengesetzt sind.
20. Sensorsystem nach einem der Ansprüche 17 bis 19, wobei das Trägerglied ein Si-basiertes
Trägerglied ist.
21. Sensorsystem nach einem der Ansprüche 17 bis 20, wobei das Trägerglied ferner eine
erste und eine zweite Einkerbung aufweist, wobei die erste Einkerbung mit dem aktiven
Glied des ersten Wandlerelements ausgerichtet ist und die zweite Einkerbung mit dem
aktiven Glied des zweiten Wandlerelements ausgerichtet ist.
22. Sensorsystem nach einem der Ansprüche 17 bis 21, wobei jedes der ersten und zweiten
Wandlerelemente ferner einen Hohlraum aufweist, wobei der Boden dieser Hohlräume durch
die aktiven Glieder der ersten und zweiten Wandlerelemente begrenzt ist.
23. Sensorsystem nach einem der Ansprüche 17 bis 22, wobei die ersten und zweiten Wandlerelemente
Si-basiert sind.
24. Sensorsystem nach einem der Ansprüche 17 bis 23, wobei das Trägerglied, die ersten
und zweiten Wandlerelemente und die elektronische Vorrichtung Si-basiert sind.
25. Sensorsystem nach einem der Ansprüche 17 bis 24, wobei jedes der aktiven Glieder der
ersten und zweiten Wandlerelemente einen Kondensator aufweist, wobei dieser Kondensator
durch eine flexible Membran in Verbindung mit einer im wesentlichen starren Verstärkungswand
gebildet ist.
26. Sensorsystem nach einem der Ansprüche 17 bis 25, wobei jedes der ersten und zweiten
Wandlerelemente ferner einen Deckel aufweist, wobei die Deckel und die aktiven Glieder
der ersten und zweiten Wandlerelemente eine obere und eine untere Grenze der jeweiligen
Hohlräume definieren.
27. Sensorsystem nach einem der Ansprüche 17 bis 26, wobei zumindest ein Teil einer äußeren
Oberfläche des Sensorsystems eine leitende Schicht hält.
28. Sensorsystem nach Anspruch 27, wobei die leitende Schicht eine Metallschicht aufweist.
29. Sensorsystem nach Anspruch 27, wobei die leitende Schicht eine leitende Polymerschicht
aufweist.
30. Sensorsystem nach einem der Ansprüche 17 bis 29, wobei die Kontaktelemente ein Lötmaterial,
wie Sn, SnAg, SnAu oder SnPb, aufweisen.
1. Système de capteur comprenant
un élément support (2) ayant une première surface, ladite première surface contenant
un premier groupe et un second groupe d'éléments de contact (8),
un élément transducteur (1) comprenant un élément actif, ledit élément actif étant
relié électriquement à au moins un élément de contact de l'élément transducteur (1)
et
un dispositif électronique (3) comprenant un circuit intégré ayant au moins un
élément de contact,
caractérisé en ce que
au moins un élément de contact de l'élément transducteur (1) est aligné avec un
des éléments de contact (8) du premier groupe de l'élément support (2) de sorte à
obtenir un contact électrique entre l'élément actif de l'élément transducteur (1)
et l'élément support (2) et en ce que
au moins un élément de contact du dispositif électronique (3) est aligné avec un
des éléments de contact (8) du second groupe de l'élément support (2) de sorte que
l'élément transducteur (1) et le dispositif électronique (3) soient positionnés côte
à côte sur la première surface de l'élément support (2) et de sorte à obtenir un contact
électrique entre le circuit intégré et l'élément support (2) et en ce que
au moins un des éléments de contact (8) du premier groupe est relié électriquement
à au moins un des éléments de contact (8) du second groupe de sorte à obtenir un contact
électrique entre l'élément actif de l'élément transducteur (1) et le circuit intégré
du dispositif électronique (3).
2. Système de capteur selon la revendication 1, dans lequel l'élément support (2) comprend
en outre une seconde surface, ladite seconde surface contenant une multiplicité d'éléments
de contact, dans lesquels au moins un des éléments de contact du premier ou du second
groupe est relié électriquement à un des éléments de contact contenus par la seconde
surface.
3. Système de capteur selon la revendication 2, dans lequel la première et la seconde
surface sont sensiblement parallèles et se font face.
4. Système de capteur selon l'une quelconque des revendications 1 à 3, dans lequel l'élément
support (2) est un élément support à base de silicium.
5. Système de capteur selon l'une quelconque des revendications 1 à 4, dans lequel l'élément
support (2) comprend en outre une découpure (11), ladite découpure (11) étant alignée
avec l'élément actif de l'élément transducteur.
6. Système de capteur selon l'une quelconque des revendications 1 à 5, dans lequel l'élément
transducteur comprend en outre une cavité (10), l'élément actif constituant le fond
de ladite cavité (10).
7. Système de capteur selon la revendication 5, comprenant en outre une ouverture (24)
entre la seconde surface de l'élément support (2) et la découpure (11).
8. Système de capteur selon l'une quelconque des revendications précédentes, dans lequel
l'élément transducteur (1) est à base de silicium.
9. Système de capteur selon l'une quelconque des revendications précédentes, dans lequel
l'élément support (2), l'élément transducteur (1) et le dispositif électronique (3)
sont à base de silicium.
10. Système de capteur selon la revendication 1, dans lequel l'élément actif de l'élément
transducteur comprend un condensateur, ledit condensateur étant formé par la combinaison
d'un diaphragme flexible (12) et d'une plaque arrière sensiblement rigide (13).
11. Système de capteur selon la revendication 6, dans lequel l'élément transducteur (1)
comprend en outre un couvercle (5), le couvercle (5) et l'élément actif de l'élément
transducteur (1) définissant les limites supérieure et inférieure de la cavité (10).
12. Système de capteur selon l'une quelconque des revendications précédentes, dans lequel
au moins une partie d'une surface extérieure du système de capteur porte une couche
conductrice (16).
13. Système de capteur selon la revendication 12, dans lequel la couche conductrice comprend
une couche métallique.
14. Système de capteur selon la revendication 12, dans lequel la couche conductrice comprend
une couche de polymère conducteur.
15. Système de capteur selon l'une quelconque des revendications précédentes, dans lequel
les éléments de contact comprennent un matériau de soudure tel que Sn, SnAg, SnAu
ou SnPb.
16. Système de capteur selon la revendication 6, comprenant en outre des moyens d'obturation
pour fermer hermétiquement l'élément transducteur.
17. Système de capteur comprenant
un élément support ayant une première surface, ladite première surface contenant
un premier, un deuxième et un troisième groupes d'éléments de contact,
un premier élément transducteur comprenant un élément actif, ledit élément actif
étant relié électriquement à au moins un élément de contact du premier élément transducteur,
un second élément transducteur comprenant un élément actif, ledit élément actif
étant relié électriquement à au moins un élément de contact du second élément transducteur,
un dispositif électronique comprenant un circuit intégré ayant au moins un élément
de contact,
caractérisé en ce que
au moins un élément de contact du premier élément transducteur est aligné avec
un des éléments de contact du premier groupe de l'élément support de sorte à obtenir
un contact électrique entre l'élément actif du premier élément transducteur et l'élément
support, et en ce que
au moins un élément de contact du second élément transducteur est aligné avec un
des éléments de contact du deuxième groupe de l'élément support de sorte que les premier
et second éléments transducteurs soient positionnés côte a côte sur la première surface
de l'élément support et de sorte à obtenir un contact électrique entre l'élément actif
du second élément transducteur et l'élément support, et en ce que
au moins un élément de contact du dispositif électronique est aligné avec un des
éléments de contact du troisième groupe de l'élément support de sorte que le dispositif
électronique soit attenant au premier ou au second élément transducteur sur la première
surface de l'élément support et de sorte à obtenir un contact électrique entre le
circuit intégré et l'élément support, et en ce que
au moins un des éléments de contact du premier groupe est relié électriquement
à au moins un des éléments de contact du troisième groupe et au moins un des éléments
de contact du deuxième groupe est relié électriquement à au moins un des éléments
de contact du troisième groupe, de sorte à obtenir un contact électrique entre l'élément
actif du premier élément transducteur et le circuit intégré et entre l'élément actif
du second élément transducteur et le circuit intégré.
18. Système de capteur selon la revendication 17, dans lequel l'élément support comprend
en outre une seconde surface, ladite seconde surface contenant une multiplicité d'éléments
de contact, dans lesquels au moins un des éléments de contact du premier, du deuxième
ou du troisième groupe est relié électriquement à un des éléments de contact contenus
par la seconde surface.
19. Système de capteur selon la revendication 18, dans lequel les première et seconde
surfaces sont sensiblement parallèles et se font face.
20. Système de capteur selon l'une quelconque des revendications 17 à 19, dans lequel
l'élément support est un élément support à base de silicium.
21. Système de capteur selon l'une quelconque des revendications 17 à 20, dans lequel
l'élément support comprend en outre une première et une seconde découpure, la première
découpure étant alignée avec l'élément actif du premier élément transducteur, la seconde
découpure étant alignée avec l'élément actif du second élément transducteur.
22. Système de capteur selon l'une quelconque des revendications 17 à 21, dans lequel
les premier et second éléments transducteurs comprennent en outre chacun une cavité,
le fond desdites cavités étant délimité par les éléments actifs des premier et second
éléments transducteurs.
23. Système de capteur selon l'une quelconque des revendications 17 à 22, dans lequel
les premier et second éléments transducteurs sont à base de silicium.
24. Système de capteur selon l'une quelconque des revendications 17 à 23, dans lequel
l'élément support, les premier et seconds éléments transducteurs et le dispositif
électronique sont à base de silicium.
25. Système de capteur selon l'une quelconque des revendications 17 à 24, dans lequel
les éléments actifs des premier et second éléments transducteurs comprennent chacun
un condensateur, ledit condensateur étant formé par la combinaison d'un diaphragme
flexible et d'une plaque arrière sensiblement rigide.
26. Système de capteur selon l'une quelconque des revendications 17 à 25, dans lequel
les premier et second éléments transducteurs comprennent en outre chacun un couvercle
et où les couvercles et les éléments actifs des premier et second éléments transducteurs
définissent les limites supérieure et inférieure des cavités respectives.
27. Système de capteur selon l'une quelconque des revendications 17 à 26, dans lequel
au moins une partie d'une surface extérieure du système de capteur porte une couche
conductrice.
28. Système de capteur selon la revendication 27, dans lequel la couche conductrice comprend
une couche métallique.
29. Système de capteur selon la revendication 27, dans lequel la couche conductrice comprend
une couche de polymère conducteur.
30. Système de capteur selon l'une quelconque des revendications 17 à 29, dans lequel
les éléments de contact comprennent un matériau de soudure tel que Sn, SnAg, SnAu
ou SnPb.