(19)
(11) EP 1 220 393 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
18.04.2007 Bulletin 2007/16

(45) Mention of the grant of the patent:
14.02.2007 Bulletin 2007/07

(21) Application number: 01129445.1

(22) Date of filing: 10.12.2001
(51) International Patent Classification (IPC): 
H01S 5/343(2006.01)

(54)

Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers

Halbleiterlaservorrichtung mit einer aktiven Schicht aus InGaAs unter Kompressionsdruck, einer Sperrschicht aus GaAsP unter Dehnungsdruck, und einem Lichtwellenleiter aus InGaP

Laser semiconducteur doté d'une couche active d'InGaAs en compression, d'une barrière en GaAsP sous tension et d'un guide d'onde en InGaP

(84) Designated Contracting States:
DE FR GB

(30) Priority: 12.12.2000 JP 2000376815
10.04.2001 JP 2001110909
20.08.2001 JP 2001249111

(43) Date of publication of application:
03.07.2002 Bulletin 2002/27

(73) Proprietor: FUJIFILM Corporation
Minato-ku Tokyo (JP)

(72) Inventors:
  • Fukunaga, Toshiaki, c/o Fuji Photo Film Co., Ltd.
    Ashigarakami-gun, Kanagawa-ken (JP)
  • Ohgoh, Tsuyoshi, c/o Fuji Photo Film Co., Ltd.
    Ashigarakami-gun, Kanagawa-ken (JP)

(74) Representative: Klunker . Schmitt-Nilson . Hirsch 
Winzererstrasse 106
80797 München
80797 München (DE)


(56) References cited: : 
EP-A- 0 814 548
 EP-A- 0 936 709
   
  • ZHANG G ET AL: "STRAIN-COMPENSATED INGAAS/GAASP/GAINASP/GAINP QUANTUM WELL LASERS ( ~0.98 UM) GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 62, no. 14, 5 April 1993 (1993-04-05), pages 1644-1646, XP000355014 ISSN: 0003-6951
  • VAIL E C ET AL: "BURIED HETEROSTRUCTURE 0.98 M INGAAS/INGAASP/INGAP LASERS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 16, 18 October 1993 (1993-10-18), pages 2183-2185, XP000404436 ISSN: 0003-6951
  • CHO S-Y ET AL: "DEPENDENCE OF OUTPUT PROPERTIES ON RIDGE STRUCTURES AND ASYMMETRIC FACET REFLECTIVITY IN 0.98-MUM INGAAS-INGAASP-INGAP SQW FP-LD'S" IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 34, no. 11, November 1998 (1998-11), pages 2217-2223, XP000799014 ISSN: 0018-9197
  • MAWST L J ET AL: "MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers" JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 170, no. 1-4, 1997, pages 383-389, XP004087139 ISSN: 0022-0248
  • TOSHIAKI FUKUNAGA ET AL: "RELIABLE OPERATION OF STRAIN-COMPENSATED 1.06 MUM INGAAS/INGAASP/ GAAS SINGLE QUANTUM WELL LASERS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 69, no. 2, 8 July 1996 (1996-07-08), pages 248-250, XP000599652 ISSN: 0003-6951
  • SAGAWA M ET AL: "HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-UM INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINEDINGAASP BARRIERS" IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 1, no. 2, 1 June 1995 (1995-06-01), pages 189-195, XP000521084 ISSN: 1077-260X
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).