......DE....FRGB................................................................JDIM360 (Ver 1.5 21 Nov 2005) - 2999001/01220393CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120070418W173deBibliographieenBibliographyfrBibliographieEP01129445.1200112102004080320050908enenen200037681520001212JP200111090920010410JP200124911120010820JP2007041820071620020703200227200702142007072006071320070418200716H01S 5/343 20060101AFI20020508BHEP deHalbleiterlaservorrichtung mit einer aktiven Schicht aus InGaAs unter Kompressionsdruck, einer Sperrschicht aus GaAsP unter Dehnungsdruck, und einem Lichtwellenleiter aus InGaPenSemiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layersfrLaser semiconducteur doté d'une couche active d'InGaAs en compression, d'une barrière en GaAsP sous tension et d'un guide d'onde en InGaPEP-A- 0 814 548EP-A- 0 936 709ZHANG G ET AL: "STRAIN-COMPENSATED INGAAS/GAASP/GAINASP/GAINP QUANTUM WELL LASERS ( ~0.98 UM) GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 62, no. 14, 5 April 1993 (1993-04-05), pages 1644-1646, XP000355014 ISSN: 0003-6951VAIL E C ET AL: "BURIED HETEROSTRUCTURE 0.98 M INGAAS/INGAASP/INGAP LASERS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 16, 18 October 1993 (1993-10-18), pages 2183-2185, XP000404436 ISSN: 0003-6951CHO S-Y ET AL: "DEPENDENCE OF OUTPUT PROPERTIES ON RIDGE STRUCTURES AND ASYMMETRIC FACET REFLECTIVITY IN 0.98-MUM INGAAS-INGAASP-INGAP SQW FP-LD'S" IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 34, no. 11, November 1998 (1998-11), pages 2217-2223, XP000799014 ISSN: 0018-9197MAWST L J ET AL: "MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers" JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 170, no. 1-4, 1997, pages 383-389, XP004087139 ISSN: 0022-0248TOSHIAKI FUKUNAGA ET AL: "RELIABLE OPERATION OF STRAIN-COMPENSATED 1.06 MUM INGAAS/INGAASP/ GAAS SINGLE QUANTUM WELL LASERS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 69, no. 2, 8 July 1996 (1996-07-08), pages 248-250, XP000599652 ISSN: 0003-6951SAGAWA M ET AL: "HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-UM INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINEDINGAASP BARRIERS" IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 1, no. 2, 1 June 1995 (1995-06-01), pages 189-195, XP000521084 ISSN: 1077-260X1CFukunaga, Toshiaki, c/o Fuji Photo Film Co., Ltd.798 Miyanodai, Kaisei-machiAshigarakami-gun, Kanagawa-kenJPOhgoh, Tsuyoshi, c/o Fuji Photo Film Co., Ltd.798 Miyanodai, Kaisei-machiAshigarakami-gun, Kanagawa-kenJPFUJIFILM Corporation07786510K 53 684/7ka26-30, Nishiazabu 2-chomeMinato-ku TokyoJPKlunker . Schmitt-Nilson . Hirsch00101001Winzererstrasse 10680797 MünchenDEDEFRGB20040602200423