REFLECTIVE LAYER BURIED IN SILICON AND METHOD OF FABRICATION - Patent 1226612

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EP 1 226 612 A2

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(88)	Date of publication A3:
	23.05.2002

(43)	Date of publication:
	31.07.2002 Bulletin 2002/31

(21)	Application number: 00946759.8

(22)	Date of filing: 05.05.2000

(51)	International Patent Classification (IPC)⁷: H01L 33/00

(86)	International application number:
	PCT/US0012/287

(87)	International publication number:
	WO 0067/891 (16.11.2000 Gazette 2000/46)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

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Priority:

06.05.1999 US 132854 P

(71)	Applicant: TRUSTEES OF BOSTON UNIVERSITY
	Boston, MA 02215 (US)

(72)	Inventors:
	UNLU, M., Selim Jamaica Plain, MA 02130 (US) EMSLEY, Matthew, K. Wilmington, DE 19803 (US)

(74)	Representative: Barth, Stephan Manuel, Dr.
	Reinhard-Skuhra-Weise & Partner Gbr,PatentanwälteFriedrichstrasse 31 80801 München 80801 München (DE)

(54)	REFLECTIVE LAYER BURIED IN SILICON AND METHOD OF FABRICATION