(19)
(11) EP 1 228 557 A2

(12)

(88) Date of publication A3:
25.10.2001

(43) Date of publication:
07.08.2002 Bulletin 2002/32

(21) Application number: 00991716.2

(22) Date of filing: 01.11.2000
(51) International Patent Classification (IPC)7H01S 5/343
(86) International application number:
PCT/US0041/775
(87) International publication number:
WO 0133/677 (10.05.2001 Gazette 2001/19)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 01.11.1999 US 162813 P

(71) Applicant: Arizona Board of Regents
Tempe, AZ 85287-6006 (US)

(72) Inventors:
  • JOHNSON, Shane
    Chandler, AZ 85225 (US)
  • DOWD, Philip,School of Electrical Engineering
    Singapore 6397981 (SG)
  • BRAUN, W.,Paul-Drude Inst. for Solid State Elect.
    D-10117 Berlin (DE)
  • ZHANG, Yong-Hang
    Scottsdale, AZ 85260 (US)
  • GUO, Chang-Zhi
    Beijing 100084 (CN)

(74) Representative: Copsey, Timothy Graham et al
Kilburn & Strode,20 Red Lion Street
London WC1R 4PJ
London WC1R 4PJ (GB)

   


(54) LONG WAVELENGTH PSEUDOMORPHIC INGANPASSB TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAS MATERIAL SYSTEM