| (84) |
Designated Contracting States: |
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DE FR GB SE |
| (30) |
Priority: |
22.12.1999 JP 36459399
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| (43) |
Date of publication of application: |
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16.10.2002 Bulletin 2002/42 |
| (73) |
Proprietors: |
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- Sixon Inc.
Kyoto 615-0065 (JP)
- Kansai Electric Power C.C., Inc.
Osaka-shi,
Osaka (JP)
- MITSUBISHI CORPORATION
Tokyo 100-8086 (JP)
- Sumitomo Electric Industries, Ltd.
Osaka-shi,
Osaka 541-0041 (JP)
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| (72) |
Inventors: |
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- SHIOMI, Hiromu
Suita-shi, Osaka 564-0004 (JP)
- KIMOTO, Tsunenobu
Fushimi-ku, Kyoto-shi, Kyoto 612-8031 (JP)
- MATSUNAMI, Hiroyuki
Yawata-shi, Kyoto 614-0000 (JP)
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| (74) |
Representative: HOFFMANN EITLE |
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Patent- und Rechtsanwälte
Arabellastrasse 4 81925 München 81925 München (DE) |
| (56) |
References cited: :
EP-A- 1 233 085 JP-A- 10 017 399
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EP-A- 1 243 674 US-A- 5 958 132
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- J. YANG ET AL.: 'Sublimation growth of 6H-SiC crystals on different faces of a 6H-SiC
seed' INST. PHYS. CONF. SER. vol. 137, 1994, pages 17 - 20, CHAPTER 1, XP002934216
- Z.Y. CHEN ET AL.: 'Specular surface morphology of 4H-SiC epilayers grown on (1120)
face' JPN. J. APPL. PHYS. vol. 38, no. 12A, PART 2, 01 December 1999, pages L1375
- L1378, XP002934217
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