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<SDOBI lang="en"><B000><eptags><B001EP>......DE....FRGB..........SE....................................................</B001EP><B005EP>J</B005EP><B007EP>DIM360 (Ver 1.5  21 Nov 2005) -  2999001/0</B007EP><B070EP>The file contains technical information submitted after the application was filed and not included in this specification</B070EP></eptags></B000><B100><B110>1249521</B110><B120><B121>CORRECTED EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20060503</date></B140><B150><B151>W1</B151><B152><date>00000000</date></B152><B153>73</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>00956968.2</B210><B220><date>20000906</date></B220><B240><B241><date>20020618</date></B241><B242><date>20030407</date></B242></B240><B250>ja</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>36459399</B310><B320><date>19991222</date></B320><B330><ctry>JP</ctry></B330></B300><B400><B405><date>20060503</date><bnum>200618</bnum></B405><B430><date>20021016</date><bnum>200242</bnum></B430><B450><date>20060111</date><bnum>200602</bnum></B450><B452EP><date>20050725</date></B452EP><B480><date>20060503</date><bnum>200618</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>C30B  29/36        20060101AFI20010705BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  21/205       20060101ALI20021218BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>C30B  23/00        20060101ALI20021218BHEP        </text></classification-ipcr><classification-ipcr sequence="4"><text>C30B  23/02        20060101ALI20021218BHEP        </text></classification-ipcr><classification-ipcr sequence="5"><text>C30B  25/00        20060101ALI20021218BHEP        </text></classification-ipcr><classification-ipcr sequence="6"><text>C30B  25/02        20060101ALI20021218BHEP        </text></classification-ipcr><classification-ipcr sequence="7"><text>C30B  25/20        20060101ALI20021218BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>SIC-EINKRISTALL UND HERSTELLUNGSVERFAHREN DAFÜR</B542><B541>en</B541><B542>SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME</B542><B541>fr</B541><B542>MONOCRISTAL EN SIC ET SON PROCEDE DE CROISSANCE</B542></B540><B560><B561><text>EP-A- 1 233 085</text></B561><B561><text>EP-A- 1 243 674</text></B561><B561><text>JP-A- 10 017 399</text></B561><B561><text>US-A- 5 958 132</text></B561><B562><text>J. YANG ET AL.: 'Sublimation growth of 6H-SiC crystals on different faces of a 6H-SiC seed' INST. PHYS. CONF. SER. vol. 137, 1994, pages 17 - 20, CHAPTER 1, XP002934216</text></B562><B562><text>Z.Y. CHEN ET AL.: 'Specular surface morphology of 4H-SiC epilayers grown on (1120) face' JPN. J. APPL. PHYS. vol. 38, no. 12A, PART 2, 01 December 1999, pages L1375 - L1378, XP002934217</text></B562><B565EP><date>20021227</date></B565EP></B560><B590><B598>03</B598></B590></B500><B700><B720><B721><snm>SHIOMI, Hiromu</snm><adr><str>1-6-19, Haramachi</str><city>Suita-shi, Osaka 564-0004</city><ctry>JP</ctry></adr></B721><B721><snm>KIMOTO, Tsunenobu</snm><adr><str>1-39-605, Matsudaira Chikuzen, Momoyama-cho</str><city>Fushimi-ku, Kyoto-shi, Kyoto 612-8031</city><ctry>JP</ctry></adr></B721><B721><snm>MATSUNAMI, Hiroyuki</snm><adr><str>1-9, Nishiyama Adachi</str><city>Yawata-shi, Kyoto 614-0000</city><ctry>JP</ctry></adr></B721></B720><B730><B731><snm>Sixon Inc.</snm><iid>03171591</iid><irf>93 495 a/jme</irf><adr><str>27-1 Hideri-cho, Saiin 
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