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(11) | EP 1 251 558 A8 |
| (12) | CORRECTED EUROPEAN PATENT APPLICATION |
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| (54) | Semiconductor device |
| (57) A semiconductor device includes a semiconductor substrate (1) on which a circuit
element forming region and a plurality of connection pads (2, 2A, 2B) are formed,
a first columnar electrode (6) which is formed on a first connection pad (2) so as
to be electrically connected to the first connection pad, a first conductive layer
(5-1) which is formed on a second connection pad (2A) so as to be electrically connected
to the second connection pad, an encapsulating film (7) which is formed at least around
the first columnar electrode, on the semiconductor substrate and on the first conductive
layer, and a second conductive layer (8) which is formed on the encapsulating film
(7) so as to face the first conductive layer. A passive element is formed from the
first and second conductive layers (5-1, 8). |