CONTROLLED NECK GROWTH PROCESS FOR SINGLE CRYSTAL SILICON - Patent 1259664

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EP 1 259 664 A2

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(88)	Date of publication A3:
	25.07.2002

(43)	Date of publication:
	27.11.2002 Bulletin 2002/48

(21)	Application number: 01914414.6

(22)	Date of filing: 20.02.2001

(51)	International Patent Classification (IPC)⁷: C30B 15/00, C30B 15/22, C30B 29/06

(86)	International application number:
	PCT/US0105/379

(87)	International publication number:
	WO 0106/3022 (30.08.2001 Gazette 2001/35)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

22.02.2000 JP 2000044369
10.05.2000 JP 2000136811

(71)	Applicant: MEMC Electronic Materials, Inc.
	St. Peters, MO 63376 (US)

(72)	Inventors:
	HAGA, Hiroyo,MEMC Electronic Materials, Inc. St. Peters, MO 63376 (US) KOJIMA, Makoto,MEMC Electronic Materials, Inc. St. Peters, MO 63376 (US) SAGA, Shigemi,MEMC Electronic Materials, Inc. St. Peters MO 63376 (US)

(74)	Representative: Maiwald Patentanwalts GmbH
	ElisenhofElisenstrasse 3 80335 München 80335 München (DE)

(54)	CONTROLLED NECK GROWTH PROCESS FOR SINGLE CRYSTAL SILICON