(19)
(11) EP 1 264 335 A1

(12)

(43) Date of publication:
11.12.2002 Bulletin 2002/50

(21) Application number: 01916675.0

(22) Date of filing: 15.03.2001
(51) International Patent Classification (IPC)7: H01L 21/268, H01L 21/265, H01L 21/324
(86) International application number:
PCT/US0108/241
(87) International publication number:
WO 0107/1787 (27.09.2001 Gazette 2001/39)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 17.03.2000 US 190233 P
11.08.2000 US 638410

(71) Applicants:
  • Varian Semiconductor Equipment Associates Inc.
    Gloucester, MA 01930 (US)
  • Ultratech Stepper Inc.
    San Jose, CA 95134 (US)

(72) Inventors:
  • FELCH, Susan, B.
    Los Altos Hills, CA 94022 (US)
  • TALWAR, Somit
    Palo Alto, CA 94306 (US)
  • DOWNEY, Daniel, F.
    Magnolia, MA 01930 (US)
  • GELATOS, Carol, M.
    Redwood City, CA 94062 (US)

(74) Representative: Beck, Simon Antony et al
Withers & Rogers,Goldings House,2 Hays Lane
London SE1 2HW
London SE1 2HW (GB)

   


(54) METHOD OF FORMING ULTRASHALLOW JUNCTIONS BY LASER ANNEALING AND RAPID THERMAL ANNEALING