(19)
(11) EP 1 271 625 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
16.05.2007 Bulletin 2007/20

(43) Date of publication A2:
02.01.2003 Bulletin 2003/01

(21) Application number: 02020856.7

(22) Date of filing: 22.12.1995
(51) International Patent Classification (IPC): 
H01L 21/20(2006.01)
H01L 33/00(2006.01)
 H01L 21/205(2006.01)
H01S 5/227(2006.01)
(84) Designated Contracting States:
DE FR GB

(30) Priority: 27.12.1994 JP 32427794
08.12.1995 JP 32042695
12.12.1995 JP 32283395

(62) Application number of the earlier application in accordance with Art. 76 EPC:
95309417.4 / 0720243

(71) Applicant: FUJITSU LIMITED
Kawasaki-shi, Kanagawa 211-8588 (JP)

(72) Inventors:
  • Fujii, Takuya, c/o Fujitsu Limited
    Kawasaki-shi, Kanagawa , 211-8588 (JP)
  • Ekawa, Mitsuru, c/o Fujitsu Limited
    Kawasaki-shi, Kanagawa , 211-8588 (JP)
  • Yamamoto, Tsuyoshi, c/o Fujitsu Limited
    Kawasaki-shi, Kanagawa , 211-8588 (JP)
  • Kobayashi, Hirohiko, c/o Fujitsu Limited
    Kawasaki-shi, Kanagawa , 211-8588 (JP)

(74) Representative: Fenlon, Christine Lesley et al
Haseltine Lake Lincoln House 300 High Holborn
London WC1V 7JH
London WC1V 7JH (GB)

   


(54) Method of fabrication compound semiconductor device


(57) A method of fabricating a compound semiconductor device is provided which comprises the steps of: forming on a compound semiconductor substrate (1) a selective growth mask (9) having opening (8) consisting of a narrow first region (8a) and a wide second region (8b) and placing said compound semiconductor substrate (1) and said selective growth mask (9) in a crystal growth atmosphere. The method includes the steps of introducing a first gas including more than two kinds of seed material and a second gas including impurity into said crystal growth atmosphere so as to grow a first compound semiconductor layer (2 or 6) in regions of compound semiconductor substrate not covered with said selective growth mask (9) and growing the same compound semiconductor layer as said first compound semiconductor layer (2 or 6) on said first compound semiconductor layer (2 or 6) by varying pressure in said crystal growth atmosphere and varying the supply amount of said second gas during growing said first compound semiconductor layer (2 or 6) or while growth of said first compound semiconductor layer (2 or 6) is stopped temporarily.
The method is particularly, but not exclusively, suited to the production of an optical semiconductor device in which strain in a thick film thickness region can be adjusted whereby compressive strength generated in gain regions of optical guide layers can be reduced.










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