METHOD OF MODIFYING THE SURFACE OF A SEMICONDUCTOR WAFER - Patent 1281197

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EP 1 281 197 A1

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(43)	Date of publication:
	05.02.2003 Bulletin 2003/06

(21)	Application number: 00968554.6

(22)	Date of filing: 02.10.2000

(51)	International Patent Classification (IPC)⁷: H01L 21/306, H01L 21/321, H01L 21/3105

(86)	International application number:
	PCT/US0027/091

(87)	International publication number:
	WO 0108/4613 (08.11.2001 Gazette 2001/45)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

28.04.2000 US 560973

(71)	Applicant: 3M Innovative Properties Company
	Saint Paul, MN 55133-3427 (US)

(72)	Inventor:
	GAGLIARDI, John, J. Saint Paul, MN 55133-3427 (US)

(74)	Representative: VOSSIUS & PARTNER
	Siebertstrasse 4 81675 München 81675 München (DE)

(54)	METHOD OF MODIFYING THE SURFACE OF A SEMICONDUCTOR WAFER