(19)
(11) EP 1 287 555 A1

(12)

(43) Date of publication:
05.03.2003 Bulletin 2003/10

(21) Application number: 01939124.2

(22) Date of filing: 18.05.2001
(51) International Patent Classification (IPC)7H01L 21/768, H01L 23/532
(86) International application number:
PCT/US0116/139
(87) International publication number:
WO 0109/3326 (06.12.2001 Gazette 2001/49)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 31.05.2000 US 583962

(71) Applicants:
  • Infineon Technologies North America Corp.
    San Jose, CA 95112-4508 (US)
  • International Business Machines Corporation
    Armonk, NY 10504 (US)

(72) Inventors:
  • LIMB, Young
    Poughkeepsie, NY 12601 (US)
  • JONES, Bradley, P.
    Pleasant Valley, NY 12569 (US)
  • MALDEI, Michael
    Wappingers Falls, NY 12590 (US)
  • RAMAC, Samuel, C.
    Poughkeepsie, NY 12601 (US)
  • SNAVELY, Colleen, M.
    Hopewell Junction, NY 12533 (US)
  • WANG, Yun, Yu
    Poughquag, NY 12570 (US)

(74) Representative: Epping Hermann & Fischer 
Ridlerstrasse 55
80339 München
80339 München (DE)

   


(54) PROCESS FOR FORMING DOPED EPITAXIAL SILICON ON A SILICON SUBSTRATE