THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER

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EP 1 290 251 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	01.02.2006 Bulletin 2006/05

(45)	Mention of the grant of the patent:
	30.11.2005 Bulletin 2005/48

(21)	Application number: 01943715.1

(22)	Date of filing: 14.06.2001

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International Patent Classification (IPC):

C30B 25/02^(1980.01)
C30B 29/04^(1980.01)
C23C 16/27^(2000.01)

C30B 25/20^(1980.01)
C30B 33/00^(1980.01)
C30B 25/10^(1980.01)

(86)	International application number:
	PCT/IB2001/001040

(87)	International publication number:
	WO 2001/096634 (20.12.2001 Gazette 2001/51)

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THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER

DICKE EINKRISTALLINE DIAMANTSCHICHT, VERFAHREN ZUR HERSTELLUNG DER SCHICHT UND EDELSTEINE HERGESTELLT DURCH BEARBEITUNG DER SCHICHT

COUCHE DE DIAMANT MONOCRISTALLIN EPAISSE, PROCEDE DE FABRICATION, ET PIERRES PRECIEUSES PRODUITES A PARTIR DE CETTE COUCHE

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GR IE IT LI LU MC NL PT SE TR

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Priority:

15.06.2000 GB 0014690
20.03.2001 GB 0106929

(43)	Date of publication of application:
	12.03.2003 Bulletin 2003/11

(60)	Divisional application:
	05077372.0

(73)	Proprietor: ELEMENT SIX (PTY) LTD
	1559 Springs (ZA)

(72)	Inventors:
	SCARSBROOK, Geoffrey Alan Ascot, Berkshire (GB) MARTINEAU, Philip Maurice Littlewick Green, Berkshire SL6 3RA (GB) DORN, Bärbel Susanne Charlotte Bracknell, Berkshire RG12 OWG (GB) COOPER, Andrew Michael Wokingham, Berkshire (GB) COLLINS, John Lloyd London (GB) WHITEHEAD, Andrew John Camberley, Surrey GU16 9BW (GB) TWITCHEN, Daniel James Sunningdale, Berkshire SL5 0BD (GB)

(74)	Representative: Carpmaels & Ransford
	43 Bloomsbury Square London WC1A 2RA London WC1A 2RA (GB)

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References cited: :

EP-A- 0 507 497

EP-A- 0 918 100

HUNN J D ET AL: "ION BEAM AND LASER-ASSISTED MICROMACHINING OF SINGLE-CRYSTAL DIAMOND" SOLID STATE TECHNOLOGY, COWAN PUBL.CORP. WASHINGTON, US, vol. 37, no. 12, 1 December 1994 (1994-12-01), pages 57-60, XP000485595 ISSN: 0038-111X
PLANO M A ET AL: "Characterization of a thick homoepitaxial CVD diamond film" DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS. SYMPOSIUM, DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS. SYMPOSIUM, SAN FRANCISCO, CA, USA, APRIL-AUG. 1994, pages 307-312, XP002175092 1994, Pittsburgh, PA, USA, Mater. Res. Soc, USA
MCCAULEY T S ET AL: "HOMOEPITAXIAL DIAMOND FILM DEPOSITION ON A BRILLIANT CUT DIAMOND ANVIL" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 66, no. 12, 20 March 1995 (1995-03-20), pages 1486-1488, XP000500902 ISSN: 0003-6951

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).