(19)
(11) EP 1 292 977 A2

(12)

(88) Date of publication A3:
18.04.2002

(43) Date of publication:
19.03.2003 Bulletin 2003/12

(21) Application number: 01946617.6

(22) Date of filing: 21.06.2001
(51) International Patent Classification (IPC)7: H01L 21/768
(86) International application number:
PCT/US0119/820
(87) International publication number:
WO 0109/9182 (27.12.2001 Gazette 2001/52)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 21.06.2000 US 598375

(71) Applicant: Infineon Technologies North America Corp.
San Jose, CA 95112-4508 (US)

(72) Inventors:
  • WEBER, Stefan
    01109 Dresden (DE)
  • RUF, Alexander
    01277 Dresden (DE)
  • LIN, Chenting
    Poughkeepsie, NY 12603 (US)
  • KNORR, Andreas
    Fishkill, NY 12524 (US)

(74) Representative: Epping Hermann & Fischer 
Ridlerstrasse 55
80339 München
80339 München (DE)

   


(54) INSITU DIFFUSION BARRIER AND COPPER METALLIZATION FOR IMPROVING RELIABILITY OF SEMICONDUCTOR DEVICES