BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention relates to a sleeve for a hot cathode structure used in an
electron tube such as a color CRT and a manufacturing method for such a sleeve.
2. Description of the Related Art
[0002] In an electron tube such as a color CRT, a hot cathode is used for emitting an electron
beam. An impregnated cathode is one known type of hot cathode.
[0003] An impregnated cathode has been used for an electron tube such as a traveling-wave
tube and klystron. In recent years, the impregnated cathode has also come to be used
in a large size, high resolution color CRT or the like, taking advantage of the high
current density characteristic of the impregnated cathode.
[0004] Such an impregnated cathode structure is constructed, for example, as shown in Fig.
1. A short, column-shaped cathode substrate 1 onto which an electron emission material
is impregnated is stored in a cup 2 having a cylindrical shape and a bottom. The cup
2 is inserted at one end, which is an opening, of a cylinder-shaped sleeve 3 from
the bottom of the cup 2, and fixed to the sleeve 3 with the cathode substrate 1 in
an exposed condition. A heater 4 is built into the sleeve 3. The heater 4 is constructed
from a 3% rhenium-tungsten alloy wiring with an alumina coating at the surface for
insulation. In order to enhance the heat radiation characteristic, a dark layer constructed
from a mixture of tungsten and alumina is coated on the alumina surface. The sleeve
3, on the other hand, is coaxially supported and fixed at the central section of a
holder 5, which has a cylindrical shape with a step, via three ribbons 6. A flare
(widening) 3a is provided at one opening end of the sleeve 3 in order to facilitate
insertion of the heater 4. The sleeve 3, cup 2, and three ribbons 6 are all constructed
from tantalum, niobium, molybdenum, or an alloy having at least one of these elements
as the main constituent. At the inner surface of the sleeve 3, a thin black coating
7 is adhered and formed for efficiently absorbing the heat generated by the heater
to the sleeve. The sleeve 3 may be, for example, a thin pipe having a thickness of
15 to 20 µm, a diameter of 1.25 mm, and a length of 4.0 mm.
[0005] In order to adhere the black coating to such a sleeve, there exists the following
method as disclosed in Japanese Patent Laid-Open Publication No. Hei 8-287824.
[0006] In this method, sputtering is used for adhering a thin film of aluminum to the inner
surface of a sleeve which is constructed from molybdenum, a first heating process
is performed wherein the sleeve is subjected to heating for 30 minutes at 600 °C under
a vacuum atmosphere, a second heating process is performed wherein the sleeve is subjected
to heating for 1 hour at 800 °C under the same vacuum atmosphere, and a final heating
process is performed wherein the sleeve is subjected to heating for 1 hour at 1000
°C under a wetting hydrogen atmosphere. A rough surface layer including intermetallic
compound of aluminum and molybdenum, aluminum-molybdenum oxides, and alumina is formed.
Because the rough surface layer has micro-bumps at the surface, the heat absorption
area is increased, and thus, the rough surface layer has an advantage that it has
a good heat absorption characteristic.
[0007] The conventional method for forming a black coating on a sleeve requires many steps
and is costly when mass-production is desired.
[0008] With the conventional method, it has been difficult to form a black coating uniformly
over the entire inner surface of the sleeve.
[0009] One object of the present invention is to provide a sleeve for a hot cathode structure
and a simple, low-cost manufacturing method for such sleeve, suitable for mass production,
wherein a black heat absorbing coating is formed at the entire inner surface of the
sleeve with sufficient mechanical strength and heat endurance.
SUMMARY OF THE INVENTION
[0010] In order to achieve at least the object mentioned above, according to the present
invention, there is provided a black coating adhered and formed at the inner surface
of the sleeve which constructs a portion of an electron emission cathode, wherein
said black coating is a composite film of tantalum and tungsten, rhenium, or a mixture
of tungsten and rhenium, with a micro-crack structure or micro-bump structure.
[0011] According to another aspect of the present invention, it is preferable that the composition
of the black coating is in a range of (80 : 20) to (10 : 90) in mass ratio of tantalum
and tungsten, rhenium, or the mixture of tungsten and rhenium (tantalum : tungsten,
rhenium, or the mixture of tungsten and rhenium).
[0012] According to still another aspect of the present invention, the material of the sleeve
to be used is tantalum or an alloy having tantalum as the main constituent, niobium
or an alloy having niobium as the main constituent, or molybdenum or an alloy having
molybdenum as the main constituent.
[0013] A sputtering method is used for forming the black coating. In the sputtering method,
a sleeve placed between a sputtering anode and a sputtering cathode is electrically
insulated from both electrodes.
[0014] According to the above means, a black, rough surface can be uniformly formed at the
entire inner surface of the sleeve.
[0015] Because the black coating that is formed has micro-cracks or micro-bumps on the surface,
the heat absorption area is increased, and, thus, the black coating has superior heat
absorption characteristic and sufficient mechanical strength such that a heat absorption
layer which does not peel off during the assembly of the impregnated cathode or during
the insertion of the heater can be obtained. Moreover, the degree of blackness does
not change when a heater is inserted and heat is applied, and the constituents do
not vaporize.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016]
Fig. 1 is a diagram showing an impregnated cathode structure to which the present
invention is applied.
Fig. 2 is a cross sectional view showing an example structure of a sputtering device
according to the present invention.
Fig. 3 is an electron micrograph showing an embodiment of the present invention.
Fig. 4 is another electron micrograph showing an embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT
[0017] The preferred embodiment of the present invention will now be described referring
to the drawings.
[0018] Fig. 2 is a cross sectional view showing an example of a sputtering device used for
adhering and forming a black coating according to the present invention.
[0019] As shown in Fig. 2, the sputtering device comprises a container 20; rotational axis
21; a sputtering anode 22 which is connected to the rotational axis 21; an insulator
23 which is connected to the rotational axis 21; a retaining plate 24 which is connected
to the insulator; a target 25 which forms the sputtering cathode; a magnet 26, a shielding
plate 27 surrounding the target 25; a high frequency power supply 28 which is connected
between the container 20 and the target 25; a coolant insertion inlet 29; a vacuum
emission outlet 30; and an inert gas insertion inlet 31. A hole 24a is provided at
a portion of the retaining plate 24 for placing the sleeve 3.
[0020] The target 25 which forms the sputtering cathode is constructed by mixing tantalum
powder and tungsten powder in a mass ratio (tantalum : tungsten) of (20 : 80). The
mixture can be used in the powder form as the target or used as the target after the
power is sintered.
[0021] When sputtering is performed using the sputtering device, the sleeve 3 is inserted
into the hole 24a provided on the retaining plate 24 so that the sleeve 3 is held
within the hole 24a by the flare section of the sleeve 3. Then, a high frequency voltage
is applied by the high frequency power supply 28 between the sputtering anode 22 and
the target 25, a coolant is supplied from the coolant insertion inlet 29, air is emission
from the vacuum emission outlet 30, emission argon gas is supplied from the inert
gas insertion inlet 31, and the retaining plate 24 is rotated by the rotational axis
21.
[0022] By such sputtering, a composite coating of tantalum and tungsten is formed at the
inner surfaceof the sleeve 3 with a thickness of about 1 µm and having a micro-crack
structure at the surface of the coating.
[0023] During the sputtering, the composite coating is only formed at the inner surface
of the sleeve 3, and no composite coating is adhered to the outer surface.
[0024] Fig. 3 shows an electron micrograph of a composite film of tantalum and tungsten
which is formed at the inner surface of the sleeve 3 by the above method. The coating
has a black rough surface with micro-cracks at the surface. The composition of the
film was (20 : 80) in mass ratio (tantalum : tungsten).
[0025] Fig. 4 shows an electron micrograph of a composite film of tantalum and tungsten
which is formed at the inner surface of the sleeve 3 by a method similar to the above,
using the sputtering device shown in Fig. 2 and a target which is obtained by mixing
tantalum powder and tungsten powder in mass ratio (tantalum : tungsten) of (40 : 60).
The coating has a black rough surface with micro-bumps on the surface. The composition
of the film was (40 : 60) in mass ratio (tantalum : tungsten).
[0026] It was experimentally confirmed that the composite film with micro-crack structure
or with micro-bump structure can be formed when the composition of the film is in
a range between (80 : 20) and (10 : 90) in mass ratio (tantalum : tungsten). The adjustment
of the composition can easily be attained by adjusting the mixing ratio between the
tantalum powder and tungsten powder, which are the materials for the target, in a
range between (80 : 20) and (10 : 90) in mass ratio (tantalum : tungsten).
[0027] In the above embodiment, the target which is the material for the black coating is
formed by mixing tantalum and tungsten. However, the present invention is not limited
to this configuration, and similarly uniform black coating was obtained by using rhenium
or a mixture of tungsten and rhenium in place of tungsten.
[0028] A uniform black rough surface can be formed at the entire inner surface of the sleeve
using the sputtering device as shown in Fig. 2, that is, a sputtering device having
a structure in which the sleeve placed between the sputtering anode and sputtering
cathode is electrically insulated from both electrodes. This is believed possible
because, when the sputtering device of Fig. 2 is used, the inner surface of the sleeve
which touches a plasma and which is electrically insulated is negatively charged during
the sputtering operation. Therefore, the inner surface of the sleeve attracts positive
ions and a migration layer of positive ions is generated in the space between the
sputtering anode and the sputtering cathode. The migration layer then facilitates
sputtered particles to move, and, therefore, a uniform thin film can be formed on
the entire inner surface of the sleeve.
[0029] A black rough surface with micro-crack structure or micro-bump structure can be formed
using the sputtering device of Fig. 2 and a mixture of tantalum and tungsten as the
material for the target.
[0030] It is known that, in general, when tantalum is heavily bombarded by ions and electrons,
cracks tends to be generated in the tantalum thin film that is formed by sputtering
and the surface tends to be not smooth.
[0031] In the embodiment, the sleeve placed between the sputtering anode and sputtering
cathode is insulated from both electrodes. Because of this, the sleeve is negatively
charged during the sputtering process and bombarded by ions. Thus, tantalum having
appropriate amount of micro-cracks or micro-bumps is generated and mixed in the tungsten
film, and a black rough surface is formed.
[0032] When the sputtering is performed using tantalum alone or tungsten alone as the material
for the target, no black rough surface with sufficient mechanical strength and micro-cracks
or micro-bumps could not obtained, unlike in the embodiment.
[0033] As described above, in the sputtering device of Fig. 2, the sleeveplaced between
the sputtering anode and the sputtering cathode is insulated. However, it is clear
that similar effects can be achieved by applying an appropriate voltage between the
anode potential and cathode potential to the insulated sleeve and performing bias
sputtering.
[0034] In the description of the preferred embodiment, a high frequency magnetron sputtering
method is used. However, the present invention is not limited to such a configuration,
and similar effects can be achieved by other methods such as, for example, high frequency
sputtering, magnetron sputtering, and DC sputtering methods.
[0035] The thickness of the black coating which can be obtained by the present invention
is not limited to 1 µm as described above, but can be any other suitable thickness
such as, for example, in a range between 0.5 µm and 5 µm.
[0036] It has been shown that the inner surface of the sleeve having the black coating formed
by the embodiment has a thermal radiation ratio which is 0.3 to 0.4 higher than that
for a sleeve without the black coating adhered, at a temperature range around 950°C
which is the operation temperature of the impregnated cathode.
[0037] Moreover, the black coating according to the present invention is a heat absorption
layer which has a sufficient mechanical strength wherein the degree of blackness is
not changed when a heater is inserted into the sleeve and heat is applied, and there
is no vaporization of the compositions.
[0038] The material for the sleeve having the black coating according to the present invention
can be selected from among tantalum or an alloy having tantalum as the main constituent,
niobium or an alloy having niobium as the main constituent, or molybdenum or an alloy
having molybdenum as the main constituent.
[0039] As described above, according to the present invention, a heat absorbing black coating
which is a composite film of tantalum and tungsten, rhenium, or a mixture of tungsten
and rhenium and which has a micro-crack structure or micro-bump structure at its surface
is adhered, by a sputtering method, to the inner surface of a sleeve which forms a
portion of an electron emission cathode.
[0040] In this manner, according to the present invention, a heat absorption layer, which
exhibits superior mechanical strength and superior heat endurance; a superior heat
absorption characteristic, due to the fact that the heat absorption layer has an increased
heat absorbing area by the presence of micro-cracks or micro-bumps; and wherein the
degree of blackness does not change and the composition metals do not vaporize, can
be obtained through a procedure comprising simple steps, at low cost, and using a
method suitable for mass production.
1. A sleeve for a hot cathode structure which forms a portion of an electron emission
cathode, said sleeve having black coating adhered and formed at its inner surface;
wherein
said black coating is a composite film of tantalum and tungsten, rhenium, or a
mixture of tungsten and rhenium, with a micro-crack structure or micro-bump structure
at the surface.
2. A sleeve for a hot cathode structure according to claim 1, wherein the composition
of said black coating of tantalum and tungsten, rhenium, or said mixture of tungsten
and rhenium is in a range between (80 : 20) and (10 : 90) in mass ratio (tantalum
: tungsten, rhenium, or said mixture of tungsten and rhenium).
3. A sleeve for a hot cathode structure which forms a portion of an electron emission
cathode, said sleeve having black coating adhered and formed at its inner surface;
wherein
said sleeve is constructed from tantalum or an alloy having tantalum as the main
constituent, niobium or an alloy having niobium as the main constituent, or molybdenum
or an alloy having molybdenum as the main constituent; and
said black coating is a composite film of tantalum and tungsten, rhenium, or a
mixture of tungsten and rhenium, with a micro-crack structure or micro-bump structure
at the surface.
4. A method of manufacturing a sleeve for a hot cathode using a sputtering device having
a structure with a retaining plate which is provided between a sputtering anode and
a sputtering cathode and is electrically insulated from said sputtering anode and
sputtering cathode, said method comprising the step of:
adhering and forming a black coating on the inner surface of a sleeve placed on said
retaining plate, said black coating including a composite film of tantalum and tungsten,
rhenium, or a mixture of tungsten and rhenium with a micro-crack structure or a micro-bump
structure on the surface.
5. A method of manufacturing a sleeve for a hot cathode using a sputtering device having
a structure with a retaining plate which is provided between a sputtering anode and
a sputtering cathode and has a bias potential between the anode potential and the
cathode potential, said method comprising the step of:
adhering and forming a black coating on the inner surface of a sleeve placed on said
retaining plate, said black coating including a composite film of tantalum and tungsten,
rhenium, or a mixture of tungsten and rhenium with a micro-crack structure or a micro-bump
structure on the surface.