(19)
(11) EP 1 304 779 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
04.08.2004 Bulletin 2004/32

(43) Date of publication A2:
23.04.2003 Bulletin 2003/17

(21) Application number: 02018215.0

(22) Date of filing: 20.08.2002
(51) International Patent Classification (IPC)7: H01S 5/0625
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 12.10.2001 KR 2001062881

(71) Applicant: SAMSUNG ELECTRONICS CO., LTD.
Suwon-City, Kyungki-do (KR)

(72) Inventors:
  • Bang, Dong-Soo
    Suwon-city, Kyungki-do (KR)
  • Jang, Dong-Hoon
    Suwon-city, Kyungki-do (KR)
  • Shim, Jong-In
    Suwon-city, Kyungki-do (KR)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Maximilianstrasse 58
80538 München
80538 München (DE)

   


(54) Distributed feedback semiconductor laser


(57) A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate (310). A guide layer (350) propagates light between the first and second clad layers (320,380). An oscillating active layer (360) oscillates light at a predetermined wavelength and an amplifying active layer (370) amplifies the light with a predetermined gain between the first clad layer and the guide layer. The distributed feedback semiconductor laser is divided into a laser oscillation section (450) including the oscillating active layer and a laser amplification section (460) including the amplifying active layer. First and second gratings (330,340) are formed on the lower surface of the guide layer in the laser oscillation section and in the laser amplification section, respectively.






Search report