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<SDOBI lang="en"><B000><eptags><B001EP>......DE....FRGB................................................................</B001EP><B003EP>*</B003EP><B005EP>J</B005EP><B007EP>DIM360 (Ver 1.5  21 Nov 2005) -  2999001/0</B007EP></eptags></B000><B100><B110>1305838</B110><B120><B121>CORRECTED EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20071003</date></B140><B150><B151>W1</B151><B153>73</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>01920757.0</B210><B220><date>20010323</date></B220><B240><B241><date>20021024</date></B241><B242><date>20040218</date></B242></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>191774 P</B310><B320><date>20000324</date></B320><B330><ctry>US</ctry></B330><B310>225134 P</B310><B320><date>20000814</date></B320><B330><ctry>US</ctry></B330><B310>238673 P</B310><B320><date>20001006</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>20071003</date><bnum>200740</bnum></B405><B430><date>20030502</date><bnum>200318</bnum></B430><B450><date>20070221</date><bnum>200708</bnum></B450><B452EP><date>20060908</date></B452EP><B480><date>20071003</date><bnum>200740</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01M  10/00        20060101AFI20011005BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>HERSTELLUNG BEI NIEDRIGER TEMPERATUR VON DÜNNSCHICHT- ENERGIESPEICHERVORRICHTUNGEN</B542><B541>en</B541><B542>LOW-TEMPERATURE FABRICATION OF THIN-FILM ENERGY-STORAGE DEVICES</B542><B541>fr</B541><B542>FABRICATION BASSE TEMPERATURE DE DISPOSITIFS D'ACCUMULATION D'ENERGIE EN COUCHE MINCE</B542></B540><B560><B561><text>EP-A- 0 867 752</text></B561><B561><text>WO-A-95/14311</text></B561><B561><text>WO-A-98/47196</text></B561><B561><text>WO-A-99/25908</text></B561><B561><text>GB-A- 2 318 127</text></B561><B561><text>US-A- 4 730 383</text></B561><B561><text>US-A- 5 051 274</text></B561><B561><text>US-A- 5 171 413</text></B561><B561><text>US-A- 5 189 550</text></B561><B561><text>US-A- 5 425 966</text></B561><B561><text>US-A- 5 445 906</text></B561><B561><text>US-A- 5 978 207</text></B561><B561><text>US-A- 6 094 292</text></B561><B562><text>GOLDNER R B ET AL: "AMBIENT TEMPERATURE SYNTHESIS OF POLYCRYSTALLINE THIN FILMS OF LITHIUM COBALT OXIDE WITH CONTROLLED CRYSTALLITES' ORIENTATIONS" , MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, VOL. 548, PAGE(S) 131-136 XP001033568 ISSN: 0272-9172 page 131, paragraph 1 -page 133, paragraph 6</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 1997, no. 01, 31 January 1997 (1997-01-31) &amp; JP 08 236105 A (NISSIN ELECTRIC CO LTD), 13 September 1996 (1996-09-13)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03, 31 March 1997 (1997-03-31) &amp; JP 08 287901 A (NISSIN ELECTRIC CO LTD), 1 November 1996 (1996-11-01)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 011, no. 227 (E-526), 23 July 1987 (1987-07-23) &amp; JP 62 044960 A (MITSUBISHI ELECTRIC CORP), 26 February 1987 (1987-02-26)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 1998, no. 05, 30 April 1998 (1998-04-30) &amp; JP 10 021933 A (MITSUBISHI HEAVY IND LTD), 23 January 1998 (1998-01-23)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 007, no. 236 (E-205), 20 October 1983 (1983-10-20) &amp; JP 58 126679 A (HITACHI SEISAKUSHO KK), 28 July 1983 (1983-07-28)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 1995, no. 06, 31 July 1995 (1995-07-31) &amp; JP 07 057739 A (AGENCY OF IND SCIENCE &amp; TECHNOL), 3 March 1995 (1995-03-03)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 018, no. 382 (E-1580), 19 July 1994 (1994-07-19) &amp; JP 06 111828 A (MITSUBISHI MATERIALS CORP), 22 April 1994 (1994-04-22)</text></B562><B562><text>PATENT ABSTRACTS OF JAPAN vol. 018, no. 540 (E-1616), 14 October 1994 (1994-10-14) &amp; JP 06 196178 A (MITSUBISHI HEAVY IND LTD), 15 July 1994 (1994-07-15)</text></B562><B562><text>DUNN D N ET AL: "MOS2 DEPOSITED BY ION BEAM ASSISTED DEPOSITION: 2H OR RANDOM LAYER STRUCTURE?" JOURNAL OF MATERIALS RESEARCH, NEW YORK, NY, US, vol. 13, no. 10, October 1998 (1998-10), pages 3001-3007, XP001030084 ISSN: 0884-2914</text></B562></B560></B500><B700><B720><B721><snm>JENSON, Mark, Lynn</snm><adr><str>33311 Dolphin Street N.W.</str><city>Princeton, MN 55371</city><ctry>US</ctry></adr></B721></B720><B730><B731><snm>Cymbet Corporation</snm><iid>03888780</iid><irf>C73181/KK</irf><adr><str>18326 Joplin St. NW</str><city>Elk River, MN 55330</city><ctry>US</ctry></adr></B731></B730><B740><B741><snm>Preuss, Udo</snm><iid>00088111</iid><adr><str>Maiwald Patentanwalts GmbH 
Elisenhof 
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