METHOD OF FORMING A PRE-METAL DIELECTRIC FILM ON A SEMICONDUCTOR SUBSTRATE - Patent 1316107

(19)

(11)

EP 1 316 107 A2

(12)

(88)	Date of publication A3:
	25.07.2002

(43)	Date of publication:
	04.06.2003 Bulletin 2003/23

(21)	Application number: 01984577.5

(22)	Date of filing: 18.07.2001

(51)	International Patent Classification (IPC)⁷: H01L 21/316

(86)	International application number:
	PCT/US0122/855

(87)	International publication number:
	WO 0201/9411 (07.03.2002 Gazette 2002/10)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
	Designated Extension States:
	AL LT LV MK RO SI

(30)

Priority:

29.08.2000 US 650961

(71)	Applicant: ATMEL CORPORATION
	San Jose,California 95131 (US)

(72)	Inventors:
	KELKAR, Amit, S. Irving, Texas 75063 (US) WHITEMAN, Michael, D. Woodland Park, CO 80866 (US)

(74)	Representative: Käck, Jürgen
	Kahler Käck MollekopfVorderer Anger 239 86899 Landsberg/Lech 86899 Landsberg/Lech (DE)

(54)	METHOD OF FORMING A PRE-METAL DIELECTRIC FILM ON A SEMICONDUCTOR SUBSTRATE