(19)
(11) EP 1 320 103 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION

(48) Corrigendum issued on:
20.08.2003 Bulletin 2003/34

(43) Date of publication:
18.06.2003 Bulletin 2003/25

(21) Application number: 03005835.8

(22) Date of filing: 19.03.1997
(51) International Patent Classification (IPC)7: G11C 11/22
(84) Designated Contracting States:
DE FR GB IT NL

(30) Priority: 25.03.1996 JP 6774096

(62) Application number of the earlier application in accordance with Art. 76 EPC:
97907378.0 / 0829882

(71) Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Kadoma-shi, Osaka (JP)

(72) Inventor:
  • Hirano, Hiroshige
    Nara-shi, Nara 631 (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Maximilianstrasse 58
80538 München
80538 München (DE)

 
Remarks:
This application was filed on 14 - 03 - 2003 as a divisional application to the application mentioned under INID code 62.
 


(54) Ferroelectric memory device


(57) To present a ferroelectric memory device capable of further decreasing fluctuations of reference potential in reference memory cell system. To achieve the object, the ferroelectric memory device comprises, as shown, for example, in FIG. 1, a reference potential generating circuit in a system for generating a reference potential by averaging the potentials being read out from two ferroelectric capacitors for reference memory cells CD00, CD20 storing data of high level, and two ferroelectric capacitors for reference memory cells CD10, CD30 storing data of low level.