SILICON OXIDE PATTERNING USING CVD PHOTORESIST - Patent 1320877

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EP 1 320 877 A2

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(88)	Date of publication A3:
	29.08.2002

(43)	Date of publication:
	25.06.2003 Bulletin 2003/26

(21)	Application number: 01964510.0

(22)	Date of filing: 30.08.2001

(51)	International Patent Classification (IPC)⁷: H01L 21/312

(86)	International application number:
	PCT/US0126/999

(87)	International publication number:
	WO 0202/7777 (04.04.2002 Gazette 2002/12)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

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Priority:

27.09.2000 US 670743

(71)	Applicant: Infineon Technologies North America Corp.
	San Jose, CA 95112-4508 (US)

(72)	Inventor:
	LEE, Gill Wappingers Falls, NY 12590 (US)

(74)	Representative: Epping Hermann & Fischer
	Ridlerstrasse 55 80339 München 80339 München (DE)

(54)	SILICON OXIDE PATTERNING USING CVD PHOTORESIST