[0001] The present invention relates generally to vapor deposition of an organic layer onto
a structure which will form part of an organic light-emitting device (OLED).
[0002] An organic light-emitting device, also referred to as an organic electroluminescent
device, can be constructed by sandwiching two or more organic layers between first
and second electrodes.
[0003] In a passive matrix organic light-emitting device (OLED) of conventional construction,
a plurality of laterally spaced light-transmissive anodes, for example indium-tin-oxide
(ITO) anodes, are formed as first electrodes on a light-transmissive substrate such
as, for example, a glass substrate. Two or more organic layers are then formed successively
by vapor deposition of respective organic materials from respective sources, within
a chamber held at reduced pressure, typically less than 10
-3 torr (1.33 x 10
-1 pascal). A plurality of laterally spaced cathodes is deposited as second electrodes
over an uppermost one of the organic layers. The cathodes are oriented at an angle,
typically at a right angle, with respect to the anodes.
[0004] Applying an electrical potential (also referred to as a drive voltage) operates such
conventional passive matrix organic light-emitting devices between appropriate columns
(anodes) and, sequentially, each row (cathode). When a cathode is biased negatively
with respect to an anode, light is emitted from a pixel defined by an overlap area
of the cathode and the anode, and emitted light reaches an observer through the anode
and the substrate.
[0005] In an active matrix organic light-emitting device (OLED), an array of anodes are
provided as first electrodes by thin-film transistors (TFTs) which are connected to
a respective light-transmissive portion. Two or more organic layers are formed successively
by vapor deposition in a manner substantially equivalent to the construction of the
aforementioned passive matrix device. A common cathode is deposited as a second electrode
over an uppermost one of the organic layers. The construction and function of an active
matrix organic light-emitting device is described in US-A-5,550,066, the disclosure
of which is herein incorporated by reference.
[0006] Organic materials, thicknesses of vapor-deposited organic layers, and layer configurations,
useful in constructing an organic light-emitting device, are described, for example,
in US-A-4,356,429, US-A-4,539,507, US-A-4,720,432, and US-A-4,769,292, the disclosures
of which are herein incorporated by reference.
[0007] A source for thermal physical vapor deposition of organic layers onto a structure
for making an organic light-emitting device has been disclosed by Robert G. Spahn
in commonly assigned US-A-6,237,529, issued May 29, 2001. The source disclosed by
Spahn includes a housing, which defines an enclosure for receiving solid organic material,
which can be vaporized. The housing is further defined by a top plate which defines
a vapor efflux slit-aperture for permitting vaporized organic materials to pass through
the slit onto a surface of a structure. The housing defining the enclosure is connected
to the top plate. The source disclosed by Spahn further includes a conductive baffle
member attached to the top plate. This baffle member provides line-of-sight covering
of the slit in the top plate so that vaporized organic material can pass around the
baffle member and through the slit onto the substrate or structure while particles
of organic materials are prevented from passing through the slit by the baffle member
when an electrical potential is applied to the housing to cause heat to be applied
to the solid organic material in the enclosure causing the solid organic material
to vaporize.
[0008] In using the thermal physical vapor deposition source disclosed by Spahn to form
an organic layer of a selected organic material on a substrate or structure, it has
been found that the vapor efflux slit-aperture causes nonuniform vapor flux of organic
material vapor to emanate along a length dimension of the slit. While the technical
or physical aspects of source design related to this nonuniformity of vapor flux are
not fully understood at present, it appears that opposing edges of the slit-aperture,
that is, edges opposed in a width direction of the slit, sag or rise nonuniformly
over a central portion of the slit when the source is heated to cause vaporization
of solid organic material. This is a particular problem when a width dimension of
the slit is reduced, for example, to a width dimension less than 0.5 millimeter (mm).
Such spatially nonuniform orientation of opposing slit edges can be thought of as
a deviation of planarity of opposing edges which, in turn, can promote a greater fraction
of vaporized organic material to exit the vapor deposition source through a central
portion of the slit, with a correspondingly lower fraction of vaporized organic material
exiting the source through remaining portions of the slit along its length dimension.
Such nonuniform vapor flux, directed at a substrate or structure, will cause the formation
of an organic layer thereon which will have a nonuniform layer thickness in correspondence
with the nonuniform vapor flux.
[0009] It is an object of the present invention to provide an elongated thermal physical
vapor deposition source for forming organic layers on a structure which will form
part of an organic light-emitting device (OLED).
[0010] This object is achieved in a method for coating a structure by vaporizing organic
material disposed in an elongated container having walls, comprising the steps of:
a) providing a cover on the container having apertures;
b) providing a baffle between the cover and the organic material to prevent direct
access of vaporized organic material from passing through the apertures without first
engaging the walls of the container; and
c) forming the apertures to have varying size or varying spacing between adjacent
apertures, or combinations thereof, wherein such varying aperture size or varying
aperture spacing is selected to provide a substantially improved uniformity of vapor
efflux of vaporized organic material along the elongated direction of a vapor deposition
source so that the vaporized organic material is prevented by the baffle from direct
line-of-sight access to the apertures to prevent particulate organic material from
passing through the apertures.
[0011] This object is further achieved by an elongated thermal physical vapor deposition
source for vaporizing solid organic materials and applying a vaporized organic material
as a layer onto a surface of a structure in a chamber at reduced pressure in forming
a part of an organic light-emitting device (OLED), comprising:
a) an elongated electrically insulative container for receiving solid organic material
which can be vaporized, the container defined by side walls having common upper side
wall surfaces, and a bottom wall;
b) an elongated vaporization heater sealingly disposed on the common upper side wall
surfaces of the container, the vaporization heater defining a plurality of vapor efflux
apertures extending into the container and arranged along an elongated direction of
the vaporization heater, such apertures having varying size or varying spacing between
adjacent apertures, or combinations thereof, wherein such varying aperture size or
varying aperture spacing is selected to provide a substantially improved uniformity
of vapor efflux of vaporized organic material along the elongated direction of the
vapor deposition source when the vaporization heater is heated to vaporize a portion
of the solid organic material in the container;
c) an elongated electrically conductive baffle member electrically connected to the
vaporization heater, the baffle member being spaced from the vaporization heater in
a direction towards the container, the baffle member substantially providing a line-of-sight
covering of the plurality of vapor efflux apertures to prevent direct access of vaporized
organic materials to the apertures, and to prevent particulate organic materials from
passing through the apertures;
d) means for applying an electrical potential to the vaporization heater to cause
vaporization heat to be applied to uppermost portions of the solid organic material
in the container causing such uppermost portions to vaporize so that vaporized organic
material is projected off the side walls of the container and lower surfaces of the
vaporization heater and an upper surface of the baffle member through the plurality
of vapor efflux apertures onto the structure to provide an organic layer on the structure;
and
e) means for providing relative motion between the elongated vapor deposition source
and the structure in directions substantially perpendicular to the elongated direction
of the source to provide a substantially uniform organic layer on the structure.
ADVANTAGES
[0012] An advantage of the present invention is that the spacings between adjacent ones
of the plurality of vapor efflux apertures in the elongated vaporization heater permit
a selection of varying aperture sizes or aperture spacings, or combinations thereof,
to provide a substantially improved uniformity of vapor efflux of vaporized organic
material along the elongated direction of the vapor deposition source when heat causes
vaporization of solid organic material received in the container.
[0013] Another advantage of the present invention is that spacings between adjacent ones
of the plurality of vapor efflux apertures in the elongated vaporization heater provide
mechanical stability to the apertures so that opposing aperture edges retain planarity
when the vaporization heater is heated to cause vaporization of solid organic material
received in the container.
[0014] Relative motion is provided between the elongated vapor deposition source and the
structure in directions substantially perpendicular to the elongated direction of
the source to aid in providing a substantially uniform organic layer on the structure.
FIG. 1 is a schematic perspective view of a passive matrix organic light-emitting
device having partially peeled-back elements to reveal various layers;
FIG. 2 is a schematic perspective view of an OLED apparatus suitable for making a
relatively large number of organic light-emitting devices (OLEDs) and having a plurality
of stations extending from hubs;
FIG. 3 is a schematic section view of a carrier containing a relatively large number
of substrates or structures, and positioned in a load station of the apparatus of
FIG. 2 as indicated by section lines 3-3 in FIG. 2;
FIG. 4 is a schematic perspective view of an elongated thermal physical vapor deposition
source in accordance with the present invention;
FIG. 5 is a schematic perspective view of an elongated electrically insulative container,
which is included in the vapor deposition source of FIG. 4;
FIG. 6 is a schematic sectional view of the vapor deposition source of FIG. 4 taken
along the elongated direction as indicated by section lines 6-6 in FIG. 4, and showing
a baffle member, electrical leads connected to the vaporization heater, a heat-reflective
coating on exterior surfaces of the container, and a solid organic material in powdery
form received in the container;
FIG. 7 is a schematic sectional view of the vapor deposition source of FIG. 4 taken
perpendicular to the elongated direction as indicated by section lines 7-7 in FIG.
4;
FIG. 8 is a sectional view similar to the view of FIG. 6 and showing solid organic
material in the form of solid pellets received in the container;
FIG. 9 is a sectional view similar to the view of FIG. 7 and showing a solid pellet
of organic material in the container;
FIG. 10 is a schematic perspective view of another embodiment of an elongated thermal
physical vapor deposition source in accordance with the present invention in which
an elongated container is disposed in an elongated bias heater, and an elongated vaporization
heater is sealingly disposed over the container;
FIG. 11 is a schematic sectional view of the vapor deposition source of FIG. 10 taken
perpendicular to the elongated direction as indicated by section lines 11-11 in FIG.
10;
FIGS. 12A-12H are schematic plan views of an elongated vaporization heater having
a plurality of spaced vapor efflux apertures arranged with respect to a center line
which extends along an elongated direction of the vaporization heater in accordance
with the present invention, wherein
FIG. 12A depicts a plurality of apertures of a selected constant apertures size or
aperture area, and a decreasing spacing between apertures at end portions of the aperture
arrangement;
FIG. 12B shows a plurality of apertures having a selected constant spacing between
adjacent apertures and an increasing aperture size or aperture area at end portions
of the aperture arrangement;
FIG. 12C indicates a plurality of apertures with apertures at end portions of the
aperture arrangement having an increasing aperture area and a decreasing aperture
spacing;
FIG. 12D depicts a plurality of apertures having a selected constant spacing between
adjacent apertures and an increasing aperture area at end portions of the aperture
arrangement, with apertures at the end portions showing a trapezoidal outline and
apertures in a central portion showing a rectangular outline;
FIG. 12E indicates a plurality of apertures having a selected constant aperture area
and a selected constant spacing between adjacent apertures along the elongated direction,
and providing parallel rows of apertures at end portions of the aperture arrangement;
FIG. 12F shows a plurality of circular apertures having a selected constant center-to-center
spacing between adjacent apertures, and an increasing aperture diameter at end portions
of the aperture arrangement;
FIG. 12G depicts a plurality of apertures having a selected constant center-to-center
spacing between adjacent apertures, and an increasing aperture size or aperture area
at end portions of the aperture arrangement, with apertures at the end portions showing
an oval outline extending in a direction perpendicular to the center line and apertures
in a central portion showing a circular outline; and
FIG. 12H indicates a plurality of apertures with apertures at end portions of the
aperture arrangement having an increasing aperture size or aperture area and a decreasing
aperture spacing, with apertures at the end portions showing an oval outline extending
along the center line and apertures in a central portion showing a circular outline;
FIG. 13 is a schematic sectional view of a vapor deposition station dedicated to forming
vapor-deposited organic hole-transporting layers (HTL) on structures in the OLED apparatus
of FIG. 2 as indicated by section lines 13-13 in FIG. 2 and showing a structure being
moved by a lead screw with respect to a fixedly disposed vapor deposition source to
provide a uniformly vapor-deposited organic hole-transporting layer over the structure,
in accordance with an aspect of the present invention;
FIG. 14 is a schematic top view of a portion of the HTL vapor deposition station of
FIG. 2 and showing a crystal mass-sensor disposed at an end portion of a plurality
of vapor efflux apertures formed in the elongated vapor deposition source to receive
a portion of the organic material vapor provided by the source for controlling the
vapor deposition of an organic layer over the structure;
FIG. 15 indicates schematically an experimental station for determining the uniformity
of vapor efflux of vaporized organic material from the plurality of vapor efflux apertures
formed in the vaporization heater of the elongated vapor deposition source;
FIG. 16 is a graph showing a relative uniformity of a normalized vapor deposition
rate (vapor efflux) determined in the station of FIG. 15 along the elongated direction
of three elongated thermal physical vapor deposition sources including vaporization
heaters having, respectively:
i) a single-slit elongated vapor efflux aperture (a comparative example);
ii) a plurality of vapor efflux apertures of a selected constant aperture size and
a selected constant aperture spacing (another comparative example); and
iii) a plurality of vapor efflux apertures of a selected constant aperture size and
a decreasing aperture spacing at end portions of the aperture arrangement; and
FIG. 17 is a graph showing a relative uniformity of a normalized vapor deposition
rate determined along the elongated direction of the vapor deposition source having
the vaporization heater described in (iii) above, wherein solid organic material in
powdery form was received near one end only of the elongated electrically insulative
container.
[0015] The drawings are necessarily of a schematic nature since layer thickness dimensions
of OLEDs are frequently in the sub-micrometer ranges, while features representing
lateral device dimensions can be in a range of 50-500 millimeter. Furthermore, the
plurality of apertures formed in the vaporization heater is relatively small in size
when compared to a length dimension over which the apertures extend along the elongated
direction of the heater. Accordingly, the drawings are scaled for ease of visualization
rather than for dimensional accuracy.
[0016] The term "substrate" denotes a light-transmissive support having a plurality of laterally
spaced first electrodes (anodes) preformed thereon, such substrate being a precursor
of a passive matrix OLED. The term "structure" is used to describe the substrate once
it has received a portion of a vapor deposited organic layer, and to denote an active
matrix array as a distinction over a passive matrix precursor.
[0017] Turning to FIG. 1, a schematic perspective view of a passive matrix organic light-emitting
device (OLED) 10 is shown having partially peeled-back elements to reveal various
layers.
[0018] A light-transmissive substrate 11 has formed thereon a plurality of laterally spaced
first electrodes 12 (also referred to as anodes). An organic hole-transporting layer
(HTL) 13, an organic light-emitting layer (LEL) 14, and an organic electron-transporting
layer (ETL) 15 are formed in sequence by a physical vapor deposition, as will be described
in more detail hereinafter. A plurality of laterally spaced second electrodes 16 (also
referred to as cathodes) are formed over the organic electron-transporting layer 15,
and in a direction substantially perpendicular to the first electrodes 12. An encapsulation
or cover 18 seals environmentally sensitive portions of the structure, thereby providing
a completed OLED 10.
[0019] Turning to FIG. 2, a schematic perspective view of an OLED apparatus 100 is shown
which is suitable for making a relatively large number of organic light-emitting devices
using automated or robotic means (not shown) for transporting or transferring substrates
or structures among a plurality of stations extending from a buffer hub 102 and from
a transfer hub 104. A vacuum pump 106 via a pumping port 107 provides reduced pressure
within the hubs 102, 104, and within each of the stations extending from these hubs.
A pressure gauge 108 indicates the reduced pressure within the system 100. The pressure
is typically lower than 10
-3 torr (1.33 x 10
-1 pascal).
[0020] The stations include a load station 110 for providing a load of substrates or structures,
a vapor deposition station 130 dedicated to forming organic hole-transporting layers
(HTL), a vapor deposition station 140 dedicated to forming organic light-emitting
layers (LEL), a vapor deposition station 150 dedicated to forming organic electron-transporting
layers (ETL), a vapor deposition station 160 dedicated to forming the plurality of
second electrodes (cathodes), an unload station 103 for transferring structures from
the buffer hub 102 to the transfer hub 104 which, in turn, provides a storage station
170, and an encapsulation station 180 connected to the hub 104 via a connector port
105. Each of these stations has an open port extending into the hubs 102 and 104,
respectively, and each station has a vacuum-sealed access port (not shown) to provide
access to a station for cleaning, replenishing materials, and for replacement or repair
of parts. Each station includes a housing, which defines a chamber.
[0021] In the detailed description of FIGS. 6-9 and 13 and 14, organic hole-transporting
material is depicted as an illustrative example of an organic material for forming
an organic hole-transporting layer 13 (see FIG. 1) in the station 130 (ETL) of FIG.
2. It will be appreciated that a thermal physical vapor deposition source can be effectively
used in accordance with aspects of the present invention to form an organic light-emitting
layer 14 (see FIG. 1) in the station 140 (LEL) of FIG. 2, or to form an organic electron-transporting
layer 15 (see FIG. 1) in the station 150 (ETL) of FIG. 2.
[0022] FIG. 3 is a schematic section view of the load station 110, taken along section lines
3-3 of FIG. 2. The load station 110 has a housing 110H, which defines a chamber 110C.
Within the chamber is positioned a carrier 111 designed to carry a plurality of substrates
11 having preformed first electrodes 12 (see FIG. 1). An alternative carrier 111 can
be provided for supporting a plurality of active matrix structures. Carriers 111 can
also be provided in the unload station 103 and in the storage station 170.
[0023] Turning to FIGS. 4 and 5, schematic perspective views are shown, respectively, of
an elongated thermal physical vapor deposition source constructed in accordance with
an aspect of the present invention, and of an elongated electrically insulative container
30 for receiving solid organic material, which can be vaporized
[0024] The container 30 is defined by side walls 32, 34, end walls 36, 38, and a bottom
wall 35. Side walls 32, 34 and end walls 36, 38 share a common upper surface 39. The
electrically insulative container 30 is preferably constructed of quartz or of a ceramic
material. The container has a height dimension H
c.
[0025] An elongated vaporization heater 40, which forms a cover for the container, is sealingly
disposed over the common upper surface 39 of the container 30 via a sealing flange
46 which forms part of the vaporization heater. A second sealing flange (not shown
in the drawings), also attached to the vaporization heater 40, can be used to provide
a second seal between the source and interior portions of the side walls 32, 34 and
end walls 36, 38. Other sealing elements can be used advantageously, for example,
ceramic seals, or seals constructed of a temperature-tolerant compliant material.
Such seals can be used in conjunction with the sealing flange 46.
[0026] The elongated vaporization heater 40 is substantially planar, and includes electrical
connecting flanges 41, 43. The vaporization heater 40 and the sealing flange 46 (and
a second sealing flange, if used) are preferably constructed of tantalum metal sheet
material which has moderate electrical conductivity, superior mechanical strength
and stability in repeated use cycles at elevated "vaporization" temperature, and an
ability to be readily shaped into a desired shape.
[0027] A plurality of vapor efflux apertures 42 are formed about a center line CL along
the elongated direction of the vaporization heater. The apertures 42 extend through
the vaporization heater 40 to cause vapor of organic material formed in the container
(when the heater is heated to cause vaporization of such organic material) to issue
from the apertures and to be directed toward a surface of a structure to provide an
organic layer thereon, as will be described with reference to FIG. 13.
[0028] The vapor efflux apertures 42 are spaced from one another by the tantalum metal sheet
material used to construct the heater 40. Each one of the plurality of apertures is
therefore protected from mechanical distortion of opposing aperture edges, and planarity
of the heater 40 and its apertures 42 is maintained over numerous vapor deposition
cycles.
[0029] The vapor efflux apertures can be formed by several known techniques, for example,
laser-machining and wet or dry etching. Various aperture outlines, aperture sizes
or aperture areas, and aperture spacings can be formed by such techniques. Such features
will be described in greater detail with reference to FIGS. 12A-12H.
[0030] Turning to FIG. 6, a schematic sectional view of the elongated vapor deposition source
of FIG. 4 is shown, taken along the elongated direction as indicated by the section
lines 6-6 in FIG. 4.
[0031] The elongated electrically insulative container 30 includes a heat-reflective coating
60 formed over the bottom wall 35 of the container, and extending upwardly over portions
of the side walls and end walls of the container. The heat-reflective coating is shown
here (and in FIGS. 7, 8, and 9) to be formed over exterior surfaces of the container
30. Such coating can be formed over interior surfaces of the container, or over both
exterior and interior surfaces. The heat-reflective coating or coatings can be formed
of a multilayer dielectric stack designed to reflect heat radiation back into the
container. Alternatively the heat-reflective coating can be formed of a metal or metals
having mirror-like reflective properties, such as a metal foil.
[0032] The container 30 has received a charge of solid organic material, which can be vaporized.
Solid organic hole-transporting material 13a in powder form extends to a level 13b
in the container. The term "powder" includes flakes and particulates of solid organic
material.
[0033] A baffle member 50 is attached mechanically and electrically to an underside of the
vaporization heater 40 by a plurality of baffle supports 56 which also provide a selected
spacing (shown as a spacing BHS in FIG. 15) between an upper surface 52 of the baffle
member and the vaporization heater 40. Further mechanical stability of the baffle
member 50 in the elongated direction is provided by baffle stabilizers 54. The baffle
member 50, supports 56, and stabilizers 54 are preferably constructed of tantalum
metal sheet material, as is the vaporization heater 40. The baffle supports 56 can
be spot-welded to the baffle member 50 and to the vaporization heater 40.
[0034] The baffle member 50 is sized and positioned with respect to the plurality of vapor
efflux apertures 42 of the vaporization heater 40, so that the baffle member substantially
provides a line-of-sight covering of these apertures to prevent direct access of vaporized
organic materials to the apertures, and to prevent particulate organic materials from
passing through the plurality of apertures.
[0035] A baffle member and its positioning with respect to a single slit vapor efflux aperture
has been disclosed by Robert G. Spahn in the aforementioned commonly assigned US-A-6,237,529,
issued May 29, 2001, the disclosure of which is herein incorporated by reference.
[0036] A connecting clamp 41c serves to connect an electrical lead 41w to the electrical
connecting flange 41 of the vaporization heater 40. Similarly, a connecting clamp
43c serves to connect an electrical lead 43w to the electrical connecting flange 43.
[0037] Turning to FIG. 7, a schematic sectional view of the vapor deposition source of FIG.
4 is taken in a direction perpendicular to the elongated direction of the source,
as indicated by the section lines 7-7 in FIG. 4. The baffle stabilizers 54 can be
formed by bending a previously planar baffle element into a U-shape, or by spot-welding
baffle stabilizers to a planar baffle element.
[0038] Viewing FIG. 8 and FIG. 9 together, these sectional views of the vapor deposition
source are identical to the sectional views of FIG. 6 and FIG. 7, respectively, except
that the solid organic material received in the container 30 is in the form of solid
pellets 13p of organic hole-transporting material. The preparation of such solid organic
pellets, also referred to as agglomerated organic pellets, has been disclosed by Steven
A. Van Slyke, and others in commonly assigned U.S. Patent Application Serial No. 09/898,369,
filed July 3, 2001, entitled "Method of Handling Organic Material in Making an Organic
Light-Emitting Device", the disclosure of which is herein incorporated by reference.
[0039] Turning to FIG. 10, a schematic perspective view of another embodiment of an elongated
thermal physical vapor deposition source having a plurality of vapor efflux apertures
is shown, in which an elongated electrically insulative container 30 is disposed in
an elongated bias heater 20, and an elongated vaporization heater 40 is sealingly
disposed on common upper surfaces of the container 30. The bias heater has a height
dimension H
B, which is less than a height dimension H
c of the container (see FIG. 5).
[0040] The bias heater 20 has side walls 22, 24, end walls 26, 28, and a bottom wall 25.
Electrical connecting flanges 21 and 23 extend from the end walls 28 and 26, respectively.
The bias heater 20 is preferably constructed of tantalum metal sheet material.
[0041] During operation of the elongated thermal physical vapor deposition source in a chamber
held at reduced pressure, an electrical potential is applied to the bias heater 20
via electrical leads (not shown) connected to respective electrical connecting flanges
21, 23 by connecting clamps (not shown). The applied electrical potential is selected
to cause current flow through the bias heater which, in turn, causes bias heat to
be applied to solid organic material received in the container 30 to provide a bias
temperature which is insufficient to cause the solid organic material to vaporize.
However, the bias temperature is sufficient to release entrained gases and/or entrained
moisture or volatile compounds from the organic material received in the container
30.
[0042] The vaporization heater 40, its electrical connecting flanges 41, 43, and the sealing
flange 46 are the same elements described with respect to FIGS. 4, and 6-9. The plurality
of vapor efflux apertures 42 are depicted having aperture outlines which differ from
the aperture outlines shown in the embodiment of FIG. 4. Various shapes, outlines,
and arrangements of vapor efflux apertures are shown in greater detail in FIGS. 12A-12H.
[0043] While the bias heater 20 is operative, an electrical potential is applied to the
vaporization heater 40 via electrical leads (not shown) connected to the electrical
connecting flanges 41, 43 via respective connecting clamps (not shown). The electrical
potential applied to the vaporization heater causes vaporization heat to be applied
to uppermost portions of the solid organic material in the container 30, causing such
uppermost portions to vaporize, so that vaporized organic material is projected off
the side walls 32, 34 and the end walls 36, 38 of the container 30, lower surfaces
of the vaporization heater 40, and the upper surface 52 of the baffle member, to exit
the source through the plurality of vapor efflux apertures 42 and to project a vapor
stream onto the substrate or structure 11 to provide an organic layer on the structure.
[0044] Relative motion between the elongated source of FIG. 10 and the substrate or structure
11 is provided, and in a direction substantially perpendicular to the elongated direction
of the source to form an organic layer having improved uniformity.
[0045] FIG. 11 is a schematic sectional view of the elongated vapor deposition source, taken
along the section lines 11-11 of FIG. 10, and showing the baffle member 50. The electrically
insulative container 30 does not include the heat-reflective coating 60 in the embodiment
having the bias heater 20.
[0046] A vapor deposition source which includes a bias heater 20, an electrically insulative
container 30 disposed in the bias heater, and a vaporization heater 40 having a single-slit
vapor efflux aperture disposed on the container is disclosed by Steven A. Van Slyke,
and others in U.S. Patent Application Serial No. 09/996,415, filed November 28, 2001,
commonly assigned, and entitled "Thermal Physical Vapor Deposition Source for Making
an Organic Light-Emitting Device."
[0047] Turning to FIGS. 12A-12H, schematic plan views are shown of various examples of an
elongated vaporization heater having a plurality of spaced vapor efflux apertures
arranged with respect to a center line which extends along an elongated direction
of the vaporization heater. The plurality of vapor efflux apertures defined in the
vaporization heater include apertures having a polygonal outline, a circular outline,
an ellipsoidal outline, an oval outline, or a combination of such aperture outlines
or aperture shapes.
[0048] FIG. 12A depicts a vaporization heater 40A having a plurality of apertures 42A arranged
with respect to a center line CL. Each of the apertures has a generally rectangular
outline and a height dimension h to define a selected constant aperture area a, also
referred to as an aperture size in portions of the present application. Throughout
a central portion cp of the aperture arrangement, the apertures have a selected spacing
s between apertures. Towards end portions ep of the aperture arrangement, the aperture
spacing decreases progressively from the spacing s to a spacing s3, wherein s3<s2<sl<s.
[0049] FIG. 12B shows a vaporization heater 40B having a plurality of apertures 42B arranged
with respect to a center line CL. Each of the apertures has a generally rectangular
outline and a height dimension h to define a selected aperture area a in a central
portion cp, and progressively increasing aperture areas a1, a2, a3 towards end portions
ep of the aperture arrangement, wherein a<a1<a2<a3. The spacing s between apertures
has a selected constant value.
[0050] FIG. 12C indicates a vaporization heater 40C having a plurality of apertures 42C
arranged with respect to a center line CL. Each of the apertures has a generally rectangular
outline and a height dimension h to define a selected aperture area a in a central
portion cp, and progressively increasing aperture areas a1, a2 towards end portions
ep of the aperture arrangement, wherein a<a1<a2. The spacing between apertures decreases
progressively from a selected value s in the central portion to spacings s1, s2 towards
the end portions, wherein s2<sl<s.
[0051] The plurality of apertures 42 depicted in FIGS. 4, 6, and 8 have an aperture arrangement
which is similar to the arrangement of FIG. 12C described above.
[0052] FIG. 12D shows a vaporization heater 40D having a plurality of apertures 42D arranged
with respect to a center line CL. The spacing s between apertures has a selected constant
value. Apertures in a central portion cp have a generally rectangular outline to define
a selected aperture area a. Apertures near end portions ep are shown with a trapezoidal
outline of progressively increasing aperture areas a1, a2, a3, wherein a<a1<a2<a3.
[0053] The plurality of apertures 42 depicted in FIG. 10 have an aperture arrangement, which
is similar to the arrangement of FIG. 12D described above.
[0054] FIG. 12E indicates a vaporization heater 40E having a plurality of apertures 42E
arranged with respect to a pattern center line PCL. Each of the apertures has a generally
rectangular outline and a height dimension h to define a selected constant aperture
area a. The spacing s between apertures has a selected constant value along the elongated
direction of the aperture arrangement. A pattern of parallel rows of apertures is
defined at end portions ep of this aperture arrangement with respect to the pattern
center line while a single row of apertures is defined throughout a central portion
cp.
[0055] FIG. 12F depicts a vaporization heater 40F having a plurality of apertures 42F arranged
with respect to a center line CL. Each of the apertures has a circular outline, and
the apertures have a center-to-center spacing cs of a selected value. Throughout a
central portion cp, the apertures have a selected constant diameter d. Toward end
portions ep, the diameter of apertures increases progressively from d to d1, d2, d3,
d4, wherein d<d1<d2<d3<d4.
[0056] FIG. 12G shows a vaporization heater 40G having a plurality of apertures 42G arranged
with respect to a center line CL. The apertures have a selected center-to-center spacing
cs. Throughout a central portion cp of the aperture arrangement, apertures have a
circular outline of a selected diameter d. Towards end portions ep of the aperture
arrangement, apertures have an oval outline or an ellipsoidal outline extending in
a direction perpendicular to the center line CL, and having a progressively increasing
height dimension h1, h2, h3, wherein d<h1<h2<h3.
[0057] FIG. 12H indicates a vaporization heater 40H having a plurality of apertures 42H
arranged with respect to a center line CL. Throughout a central portion cp of the
aperture arrangement, apertures are shown with a circular outline of a selected diameter
d and a selected center-to-center spacing cs. Towards end portions ep of the aperture
arrangement, apertures have an oval outline or an ellipsoidal outline extending in
a direction of the center line CL, and having a progressively increasing length dimension
l1, l2, and a progressively decreasing spacing s1, s2 between these apertures, wherein
d<l1<l2, and s2<s1<cs. The diameter d of the circular apertures and a height dimension
h of the oval or ellipsoidal apertures are shown to have the same value.
[0058] From the description of FIGS. 12A-12H, it will be appreciated that various additional
aperture outlines can be contemplated such as, for example, hexagonal outlines, as
well as combinations of polygonal apertures with circular, oval, or ellipsoidal apertures
to achieve improved uniformity of vapor efflux of vaporized organic material along
the elongated direction of the elongated vapor deposition source.
[0059] Due to the necessarily schematic nature of the drawings, it may appear that the central
portions cp of the aperture arrangements extend over a distance comparable to a sum
of distances which are described as end portions ep. In a practical elongated thermal
physical vapor deposition source constructed with a plurality of vapor efflux apertures,
the central portion of apertures can be significantly longer than the end portions
of an aperture arrangement. As the source to substrate separation is decreased, for
example, the central portion of apertures is significantly longer compared to the
end portions of the aperture arrangement.
[0060] Turning to FIG. 13, a schematic sectional view of the vapor deposition station 130
of FIG. 2 is shown which is dedicated to forming vapor-deposited organic hole-transporting
layers (HTL) on structures or substrates by using an elongated vapor deposition source
of the present invention. The station 130 has a housing 130H, which defines a chamber
130C. A substrate or structure 11 is supported in a holder and/or in a mask frame
289 within the chamber 130C which is at reduced pressure (see FIG. 2), typically at
a pressure lower than 10
-3 torr.
[0061] The thermal physical vapor deposition source of the present invention is shown in
the sectional view depicted in FIG. 7, and is supported by a thermally and electrically
insulative source support 70. Electrical leads 41w and 43w are schematically shown
directed toward the source from respective power feedthroughs 449 and 446 disposed
in the housing 130H.
[0062] In FIG. 13, and also in FIG. 14, relative motion between the substrate or structure
11 and the vapor deposition source, during vapor deposition of organic hole-transporting
material 13a in a deposition zone 13v of vapor of organic hole-transporting material,
is provided by moving or translating the substrate or structure 11 with respect to
the source The vapor deposition source, that is, the plurality of apertures 42 defined
in the vaporization heater 40, has a spacing D from the substrate or structure 11.
[0063] In an intermediate vapor deposition position "II", the substrate or structure 11,
the holder and/or mask frame 289, a glide shoe 288, and a lead screw follower 287
are shown in solid-outline sectional view. These source elements are depicted in dotted
and dashed outlines in a starting position "I" of the holder 289, and in an end position
"III" of a forward motion "F" of the holder, which is also the beginning position
of a reverse motion "R" (or return motion "R") of the holder.
[0064] Forward motion "F" and reverse or return motion "R" are effected by a lead screw
282 which engages the lead screw follower 287. The follower 287 is attached to the
glide shoe 288, which, in turn, supports the holder and/or mask frame 289. The glide
shoe 288 glides along a glide rail 285, and is guided in a glide rail groove 286 formed
in the glide rail 285. The glide rail 285 is supported by glide rail brackets 284,
which may be fastened to the housing 130H, as shown in FIG. 13.
[0065] The lead screw 282 is supported at one end by a lead screw shaft termination bracket
283, and a lead screw shaft 281 is supported in the housing 130 by a shaft seal 281a.
The lead screw shaft 281 extends through the housing 130 to a motor 280.
[0066] The motor 280 provides for forward motion "F" or reverse motion "R" via switch 290
which provides a control signal to the motor from an input terminal 292. The switch
can have an intermediate or "neutral" position (not shown) in which the holder 289
can remain in either the end position "III" of forward motion, or in the starting
position "I" in which a substrate or structure 11 with a completed organic layer is
removed from the holder and/or mask frame 289 and a new substrate or structure is
positioned in the holder.
[0067] Located near an end portion within the deposition zone 13v, and outside the dimensions
defined by the substrate or structure 11, is a crystal mass-sensor 301, as shown in
FIG. 14 The crystal mass-sensor 301 intercepts a fraction of the vapor of organic
material issuing from vapor efflux apertures at end portions ep of the plurality of
apertures. The vapor condenses on the sensor to form a layer, thereby depositing mass
on the sensor in the same manner as the vapor condenses on the substrate or structure
11 to form a layer on the substrate.
[0068] Sensor 301 is connected via a sensor signal lead 401 and a sensor signal feedthrough
410 to an input terminal 416 of a deposition rate monitor 420. The monitor 420 provides
for selection of a desired vapor deposition rate, that is, a desired rate of mass
build-up on the structure 11 and on the sensor 301, and the monitor includes an oscillator
circuit (not shown) which includes the crystal mass-sensor 301, as is well known in
the art of monitoring vapor deposition processes. The deposition rate monitor 420
provides an output signal at an output terminal 422 thereof, and this monitor output
signal becomes an input signal to a controller or amplifier 430 via a lead 424 at
an input terminal 426. An output signal at output terminal 432 of the controller or
amplifier 430 is connected via a lead 434 to an input terminal 436 of a vaporization
heater power supply 440. The vaporization heater power supply 440 has two output terminals
444 and 447 which are connected via respective leads 445 and 448 to corresponding
power feedthroughs 446 and 449 disposed in the housing 130H. The elongated vaporization
heater 40, in turn, is connected to the power feedthroughs 446, 449 with electrical
leads 43w and 41w, respectively, as depicted schematically in wavy outline in FIGS.
13 and 14.
[0069] As indicated schematically in FIG. 13 by bolded dashed lines, an organic hole-transporting
layer 13f is being formed on the substrate or structure 11 during the forward motion
"F" of the structure from the starting position "I" through the intermediate vapor
deposition position "II" towards the end position "III" of forward motion. A completed
organic hole-transporting layer 13 (see FIG. 1) is provided during a second pass of
the substrate or structure through the deposition zone defined by vapors 13v in the
reverse motion "R" from the end position "III", through the intermediate vapor deposition
position "II", for termination at the starting position "I".
[0070] Upon termination at position "I", the completed structure is removed from the chamber
130C via robotic means (not shown) disposed in the buffer hub 102 (see FIG. 2), and
the structure is advanced to another station, for example station 140, of the OELD
apparatus 100 of FIG. 2. A new substrate or structure is advanced into the holder
and/or mask frame 289 for vapor deposition of an organic hole-transporting layer 13
in the manner described above.
[0071] Turning to FIG. 14, a schematic top view of a portion of the HTL vapor deposition
station 130 of FIG. 2 is shown which shows more clearly the placement of the crystal
mass-sensor 301 at or near an end portion of the plurality of vapor efflux apertures
42, and at a position outside an area delineated by the substrate or structure 11.
Also shown more clearly are the connecting clamps 41c, 43c which connect corresponding
electrical leads 41w and 43w to respective electrical connecting flanges 41, 43 of
the vaporization heater 40, as described with reference to FIG. 6.
[0072] In order to preserve clarity of the drawings of FIGS. 13 and 14, only the single
crystal mass-sensor 301 is shown. Various other sensor configurations and methods
for sensing and controlling vapor deposition of organic layers of an OLED can be used
effectively in the practice of the present invention. For example, Michael A. Marcus
and others disclose a reusable mass-sensor in commonly assigned U.S. Patent Application
Serial No. 09/839,886, filed April 20, 2001, the disclosure of which is herein incorporated
by reference. Reusable optical sensing assemblies can also be used effectively in
the practice of the present invention to make an OLED. Various optical sensing approaches
have been used in controlling the thickness of an organic layer in making an OLED,
as disclosed by Steven A. Van Slyke and others. in commonly assigned U.S. Patent Application
Serial No. 09/839,885, filed April 20, 2001, the disclosure of which is herein incorporated
by reference.
[0073] In FIGS. 13 and 14, the substrate or structure 11 is moved with respect to a fixedly
disposed elongated vapor deposition source having the plurality of vapor efflux apertures
42, and in a direction substantially perpendicular to the elongated direction of the
source.
[0074] Relative motion between the substrate or structure 11 and the elongated vapor deposition
source having the plurality of vapor efflux apertures 42 is provided by moving the
source with respect to a fixedly disposed substrate or structure by a lead screw which
engages a movable carriage or other movable transport means on which the elongated
vapor deposition source can be positioned. Alternatively, the substrate can be moved
relative to the elongated vapor deposition source.
[0075] The drawings of FIGS. 2, 6, 7, 8, 9 and 13, 14 show, for illustrative purposes only,
organic hole-transporting material and formation of an organic hole-transporting layer
on a structure in the station 130, which is dedicated to that purpose in the OLED
apparatus 100 of FIG. 2. It will be understood that doped or undoped organic hole-transporting
layers 13 can be prepared by using one or more sources constructed in accordance with
the present invention. Similarly, doped or undoped organic light-emitting layers 14
can be formed, and doped or undoped organic electron-transporting layers 15 can be
vapor deposited onto a structure in respectively dedicated stations of the OLED apparatus
100 of FIG. 2. Also, a doped or undoped organic hole-injecting layer (not shown in
the drawings) can be formed as a first layer on a structure.
[0076] The use of dopants to provide a doped layer on a structure has been described, for
example, in the above-referenced US-A-4,769,292 in which one or more dopants are incorporated
in an organic light-emitting layer to provide a shift of color or hue of emitted light.
Such selected shifting or change of color is particularly desirable when constructing
a multi-color or full-color organic light-emitting device.
[0077] So-called color-neutral dopants can be effectively used in conjunction with an organic
hole-transporting layer and/or in conjunction with an organic electron-transporting
layer to provide an organic light-emitting device having enhanced operational stability
or extended operational life time, or enhanced electroluminescent efficiency. Such
color-neutral dopants and their use in an organic light-emitting device are disclosed
by Tukaram K. Hatwar and Ralph H. Young in commonly assigned U.S. Patent Application
serial No. 09/875,646, filed June 6, 2001, the disclosure of which is hereby incorporated
by reference.
[0078] The use of a uniformly mixed organic host layer having at least two host components
is disclosed by Ralph H. Young, and others in commonly assigned U.S. Patent Application
Serial No. 09/753,091, filed January 2, 2001, the disclosure of which is herein incorporated
by reference.
[0079] The elongated thermal physical vapor deposition source of the present invention can
also be effectively used to form a uniform layer of one or more organic dopants onto
a structure by vapor deposition or by vapor codeposition from one or more elongated
sources having a plurality of vapor efflux apertures. The dopant or dopants are received
in an elongated electrically insulative container 30 in the form of powders, flakes,
or particles, or in the form of agglomerated pellets.
[0080] The elongated thermal physical vapor deposition source of the present invention can
also be effectively used to form a uniform layer of one or more organic host materials
and one or more organic dopant materials by vapor deposition from one elongated source
having a plurality of vapor efflux apertures. The host material(s) and the dopant
material(s) are received in an elongated electrically insulative container 30 in the
form of powders, flakes, or particles, or in the form of agglomerated pellets.
EXAMPLES
[0081] Before describing the following examples, an experimental vapor deposition station
EXP is shown in the schematic cross-sectional view of FIG. 15. This experimental station
is used to determine the uniformity of vapor efflux of a vaporized organic material
from a single-slit vapor efflux aperture and from a plurality of vapor efflux apertures
formed in three different elongated vaporization heaters 40 which are sealingly disposed
over an elongated electrically insulative container 30.
[0082] In FIG. 15, like parts having like functions are shown with like numeral designations
with reference to the descriptions of FIGS. 4, 5, 6, 7, and 13. For example, the heat-reflective
coating 60 of the elongated container has been described with reference to FIGS. 6,
7. The electrical connecting flanges 41, 43 of the vaporization heater correspond
to the same electrical connecting flanges described with reference to FIG. 6. Accordingly,
like parts will not be described in detail here.
[0083] The experimental station EXP includes a housing H that defines a chamber C. The chamber
is evacuated by a vacuum pump (not shown) to a reduced pressure P
c which, for each of the following examples, was 10
-6 torr (1.33 x 10
-4 pascal).
[0084] Disposed in the chamber C is the elongated container 30, supported by the thermally
and electrically insulative source support 70, and an elongated vaporization heater
40 sealingly positioned over the container 30 via sealing flange 46. In each of the
following examples, the container 30 received a charge of a solid organic electron-transporting
material in powder form. This organic material was tris(8-quinolinolato-Nl, 08) aluminum,
an aluminum chelate, abbreviated as Alq.
[0085] A single-slit vapor efflux aperture, or a plurality of vapor efflux apertures, formed
in the vaporization heater 40, extend over a length dimension L in the elongated direction
of the heater. In each of the following examples, L was 440 millimeter (mm). This
length was chosen to provide uniform deposition over a 300 mm wide deposition region.
[0086] An upper surface 52 of the baffle member 50 has a spacing BHS to a lower surface
(not identified) of the vaporization heater 40, and the baffle member 50 has a width
dimension (not shown in FIG. 15). In each of the following examples, the spacing BHS
was 2 mm, and the baffle width was 20 mm.
[0087] Also disposed in the chamber C is a sensor array SA having eight crystal mass-sensors
501 to 508. The sensor array SA is spaced from the vaporization heater(s) 40 by a
distance DS. A uniform sensor-to-sensor spacing SS is selected so that the sensors
501 and 508 have sensor positions, which extend beyond respective terminations of
a single-slit vapor efflux aperture or of a plurality of vapor efflux apertures. In
each of the following examples, the sensor array SA was spaced from the vaporization
heater by a distance DS of 100 mm, and the sensor-to-sensor spacing SS was 68.5 mm.
[0088] Each of the crystal mass sensors 501-508 has a corresponding sensor signal lead 601
to 608 (only signal leads 601 and 608 are identified in FIG. 15), and these sensor
signal leads are connected to corresponding input terminals (not shown) of a multichannel
deposition rate monitor 620M via a multilead sensor signal feedthrough 610M. The monitor
620M is adapted to indicate periodically and sequentially sensor signals of the crystal
mass-sensors 501 to 508 wherein the sensor signals correspond to a rate of mass build-up
on the sensors as a layer of Alq is being formed on each sensor, depicted at fin dotted
outline, by condensation of Alq vapors v which define a deposition zone shown in dashed
and directional outline.
[0089] The vaporization heater 40 is heated by a regulated vaporization heater power supply
440R which includes a regulator R that is adjusted to heat the vaporization heater
to cause uppermost portions of the Alq material in the container 30 to vaporize. It
is known from independent measurements that a vapor pressure P
v of vapors of organic materials, which can be vaporized, can be several orders of
magnitude higher than the pressure P
c in the chamber C. If the vapor efflux apertures are sized and configured so as to
control vapor efflux with respect to a rate of vaporization of solid organic material
in the container 30 by the vaporization heater 40, a vapor cloud VC is formed and
spread relatively uniformly in a space between still solid organic material (Alq)
in the container 30 and the baffle member 50 and in a space between the baffle member
and the vaporization heater 40, as schematically shown in curled outlines. As the
vapor cloud VC penetrates or permeates the spacing BHS between the baffle member 50
and the vaporization heater 40, a portion of the vapor cloud can exit through the
vapor efflux aperture(s) as vapor streams v into the reduced-pressure environment
characterized by the pressure Pc in the chamber C.
[0090] In FIG. 15, the vaporization heater 40 is shown having a plurality of vapor efflux
apertures 42 which resemble the arrangement of apertures 42A of FIG. 12A, and a similar
arrangement of apertures is used in a vaporization heater selected in Examples 3,
4, and 5.
[0091] The invention and its advantages are further illustrated by the following specific
examples.
Comparative Example 1
[0092] An elongated vaporization heater of the prior art was sealingly disposed over the
elongated container 30 of FIG. 15. This prior art heater had a single-slit vapor efflux
aperture of a length dimension L of 440 mm, and the slit had a width dimension of
0.127 mm. Alq in powder form had been received in the elongated container 30 as a
relatively uniform charge to a fill-level b of approximately 12.5 mm, as depicted
in horizontal dashed outline in FIG. 15.
[0093] The vaporization heater was heated by adjusting the regulator R of the regulated
vaporization heater power supply 440R to heat the heater to a temperature which caused
uppermost portions of the solid Alq material to vaporize, and which provided a deposition
rate indication on the monitor 620M from each of the crystal mass-sensors 501 to 508.
[0094] Relative uniformity of a normalized deposition rate (normalized with respect to signals
provided by crystal mass-sensor 504 and/or sensor 505 of FIG. 15) along the elongated
direction of the vaporization heater of Comparative Example 1 is shown in FIG. 16
as a trace 1 in dotted outline.
Comparative Example 2
[0095] Another elongated vaporization heater was sealingly disposed over the elongated container
30 of FIG. 15. This heater had a plurality of rectangular vapor efflux apertures extending
over a length dimension L of 440 mm. Each aperture was 10 mm long along the elongated
direction of the heater, and the apertures were spaced from one another by 1.0 mm.
All apertures had a width dimension of 0.127 mm (the width dimension is referred to
as a height dimension h in FIGS. 12A-12C, and FIG. 12E). Alq in powder form had been
received in the elongated container 30 as a relatively uniform charge to a fill-level
b of approximately 12.5 mm, as depicted in horizontal dashed outline in FIG. 15.
[0096] The vaporization heater was heated in a manner described in Comparative Example 1
to actuate vaporization of uppermost portions of the solid Alq material.
[0097] Relative uniformity of a normalized deposition of Comparative Example 2 is shown
in FIG. 16 as a trace 2 in dashed outline.
Example 3
[0098] An elongated vaporization heater, having a plurality of rectangular vapor efflux
apertures arranged in accordance with the present invention was sealingly disposed
over the elongated container 30 of FIG. 15. The vapor efflux apertures extended over
a length dimension L of 440 mm. Each aperture was 5.0 mm long. Over a central portion
cp, the apertures had a spacing of 5.0 mm. Towards end portions ep of the aperture
arrangement, two apertures were spaced by 4.0 mm, followed by two apertures spaced
by 3.0 mm, followed by two apertures spaced by 2.0 mm. All apertures had a width dimension
of 0.127 mm (that is, the height dimension h of, for example, the rectangular apertures
42A of FIG. 12A).
[0099] Alq in powder form had been received in the elongated container 30 as a relatively
uniform charge to a fill-level 2xb of approximately 25 mm.
[0100] The vaporization heater was heated in a manner described in Comparative Example 1
to effect vaporization of uppermost portions of the solid Alq material.
[0101] Relative uniformity of a normalized deposition rate of Example 3 is shown in FIG.
16 as a trace 3 in solid outline.
Example 4
[0102] The elongated vaporization heater of Example 3 was sealingly disposed over the elongated
container 30 which had received Alq in powder form in an amount approximately equivalent
to a fill-level b, but substantially distributed towards one end wall of the container.
[0103] The vaporization heater was heated in a manner described in Comparative Example 1
to effect vaporization of uppermost portions of the nonuniformly distributed solid
Alq material.
[0104] Relative uniformity of a normalized deposition rate is shown in FIG. 17 as a trace
4 in solid outline.
Example 5
[0105] The elongated vaporization heater of Example 3 was sealingly disposed over the elongated
container 30 which had received Alq in powder form as a uniformly distributed charge
to a fill-level 0.125xb of approximately 1.6 mm.
[0106] The vaporization heater was heated in a manner described in Comparative Example 1
to effect vaporization of uppermost portions of the nonuniformly distributed solid
Alq material.
[0107] Relative uniformity of a normalized deposition rate was substantially identical to
the normalized deposition rates of trace 3 of FIG. 16, and of trace 4 of FIG. 17.
[0108] Turning to FIG. 16, a graph shows a normalized deposition rate as determined from
deposition rates measured by each of the eight crystal mass-sensors 501 to 508 of
the sensor array SA of FIG. 15 during vaporization of Alq. The points forming the
traces 1 (dotted), 2 (dashed), and 3 (solid) represent the positions of the sensors
501 to 508 with respect to the elongated direction of the vapor deposition source.
The horizontal axis of the graph reflects the sensor spacing or sensor position, which
is given in millimeters (mm). The length dimension L over which the apertures extend
along the elongated direction of the vaporization heater 40 is indicated.
[0109] Comparative Example 1 is shown as a trace 1 in dotted outline. The vapor efflux from
this single-slit vapor efflux aperture is relatively nonuniform along the elongated
direction of the slit. Such relative nonuniformity may be caused by a deviation of
planarity of opposing edges of the slit-aperture upon heating the vaporization heater
to effect vaporization of the Alq material.
[0110] Comparative Example 2 is shown as a trace 2 in dashed outline. Relative uniformity
of the normalized deposition rate is improved over a central portion of the aperture
arrangement when compared to the single-slit results of Comparative Example 1. This
improved relative uniformity may be related to an improved mechanical integrity of
the plurality of apertures, which are spaced from one another by 1.0 mm. Since the
aperture spacing is a metal bridge, opposing edges of the 10 mm long apertures are
likely to retain planarity.
[0111] Example 3 is shown as a trace 3 in solid outline. Relative uniformity of the normalized
deposition rate is substantially improved over an extended portion of the length dimension
L over which the plurality of apertures are formed in this vaporization heater, and
wherein the apertures having progressively decreasing aperture spacing towards end
portions of the aperture arrangement. In fact, the uniformity over the central 300
mm portion, the region that the source was designed for, is extremely good. The non-uniformity
is less than about 5% over this region and demonstrates that a high level of uniformity
can be achieved with an appropriately designed vaporization heater.
[0112] Turning to FIG. 17, the graph shows the normalized deposition rate of Example 4 as
a trace 4, depicted in solid outline. Relative uniformity of the normalized deposition
rate is substantially identical to the uniformity of Example 3 of FIG. 16 even though
the Alq powder was received nonuniformly in the elongated container 30. Thus, the
findings of Example 4 appear to support the belief that a vapor cloud VC is formed
uniformly throughout the space between the baffle member 50 and the container 30 wherein
formation of the vapor cloud is caused by a vapor pressure P
v of vaporized Alq which is significantly higher than a reduced pressure P
c in the chamber C.
[0113] Other features of the invention are included below.
[0114] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes doped or undoped organic hole-injecting
material, doped or undoped organic hole-transporting material, doped or undoped organic
light-emitting material, or doped or undoped organic electron-transporting material.
[0115] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes powder, flakes, particulates, or one or
more solid pellets of such organic material.
[0116] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic host materials.
[0117] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic dopant materials.
[0118] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic host materials and
one or more organic dopant materials.
[0119] The elongated thermal physical vapor deposition source wherein the means for providing
relative motion between the elongated vapor deposition source and the structure includes
a lead screw adapted either to move the source with respect to a fixedly disposed
structure, or to move the structure with respect to a fixedly disposed source.
[0120] The elongated thermal physical vapor deposition source wherein an exterior or an
interior surface of the side walls and the bottom wall of the container are coated
at least in part with a heat-reflective layer.
[0121] An elongated thermal physical vapor deposition source for vaporizing solid organic
materials and applying a vaporized organic material as a layer onto a surface of a
structure in a chamber at reduced pressure in forming a part of an organic light-emitting
device (OLED), comprising:
a) an elongated bias heater defined by side walls and a bottom wall, the side walls
having a height dimension HB;
b) an elongated electrically insulative container disposed in the bias heater, the
container receiving solid organic material which can be vaporized, the container defined
by side walls having common upper side wall surfaces, and the container side walls
having a height dimension Hc which is greater than the height dimension HB of the bias heater side walls;
c) an elongated vaporization heater sealingly disposed on the common upper side wall
surfaces of the container, the vaporization heater defining a plurality of vapor efflux
apertures extending into the container and arranged along an elongated direction of
the vaporization heater, such apertures having varying size or varying spacing between
adjacent apertures, or combinations thereof, wherein such varying aperture size or
varying aperture spacing is selected to provide a substantially improved uniformity
of vapor efflux of vaporized organic material along the elongated direction of the
vapor deposition source when the vaporization heater is heated to vaporize a portion
of the solid organic material in the container;
d) an elongated electrically conductive baffle member electrically connected to the
vaporization heater, the baffle member being spaced from the vaporization heater in
a direction towards the container, the baffle member substantially providing a line-of-sight
covering of the plurality of vapor efflux apertures to prevent direct access of vaporized
organic materials to the apertures, and to prevent particulate organic materials from
passing through the apertures;
e) means for applying an electrical potential to the bias heater to cause bias heat
to be applied to the solid organic material in the container, the bias heat providing
a bias temperature which is insufficient to cause the solid organic material to vaporize;
f) means for applying an electrical potential to the vaporization heater to cause
vaporization heat to be applied to uppermost portions of the solid organic material
in the container causing such uppermost portions to vaporize so that vaporized organic
material is projected off the side walls of the container and lower surfaces of the
vaporization heater and an upper surface of the baffle member through the plurality
of vapor efflux apertures onto the structure to provide an organic layer on the structure;
and
g) means for providing relative motion between the elongated vapor deposition source
and the structure in directions substantially perpendicular to the elongated direction
of the source to provide a substantially uniform organic layer on the structure.
[0122] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
all apertures being of one and the same selected size, and the spacing between adjacent
apertures decreasing progressively towards end portions along the center line from
a selected even spacing in a central portion along the center line of apertures.
[0123] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
the spacing between adjacent apertures having one and the same selected value, and
the size of the apertures increasing progressively towards end portions along the
center line from a selected even aperture size in a central portion along the center
line of apertures.
[0124] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
the spacing between adjacent apertures decreasing progressively towards end portions
along the center line from a selected even spacing in a central portion along the
center line of apertures, and the size of apertures increasing progressively towards
end portions along the center line from a selected even aperture size in a central
portion along the center line of apertures.
[0125] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged in a pattern with
respect to a pattern center line, the pattern including parallel rows of apertures
towards end portions of the pattern center line, and the pattern including a sequence
of single apertures in a central portion of the pattern center line.
[0126] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater include apertures having a polygonal
outline, a circular outline, an ellipsoidal outline, an oval outline, or a combination
of such aperture outlines.
[0127] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes doped or undoped organic hole-injecting
material, doped or undoped organic hole-transporting material, doped or undoped organic
light-emitting material, or doped or undoped organic electron-transporting material.
[0128] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes powder, flakes, particulates, or one or
more solid pellets of such organic material.
[0129] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic host materials.
[0130] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic dopant materials.
[0131] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic host materials and
one or more organic dopant materials.
[0132] The elongated thermal physical vapor deposition source wherein the means for providing
relative motion between the elongated vapor deposition source and the structure includes
a lead screw adapted either to move the source with respect to a fixedly disposed
structure, or to move the structure with respect to a fixedly disposed source.
[0133] In an elongated thermal physical vapor deposition source including an elongated electrically
insulative container for receiving solid organic material which can be vaporized,
and means for heating and vaporizing at least a portion of the solid organic material
and applying the vaporized organic material as a layer onto a surface of a structure
in a chamber at reduced pressure in forming a part of an organic light-emitting device
(OLED), the improvement comprising:
a) an elongated vaporization heater sealingly disposed on common upper side wall surfaces
of the container, the vaporization heater defining a plurality of vapor efflux apertures
extending into the container and arranged along an elongated direction of the vaporization
heater, such apertures having varying size or varying spacing between adjacent apertures
apertures, or combinations thereof, wherein such varying aperture size or varying
aperture spacing is selected to provide a substantially improved uniformity of vapor
efflux of vaporized organic material along the elongated direction of the vapor deposition
source when the vaporization heater is heated to vaporize a portion of the solid organic
material in the container; and
b) means for providing relative motion between the elongated vapor deposition source
and the structure in directions substantially perpendicular to the elongated direction
of the source to provide a substantially uniform organic layer on the structure.
[0134] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
all apertures being of one and the same selected size, and the spacing between adjacent
apertures decreasing progressively towards end portions along the center line from
a selected even spacing in a central portion along the center line of apertures.
[0135] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
the spacing between adjacent apertures having one and the same selected value, and
the size of the apertures increasing progressively towards end portions along the
center line from a selected even aperture size in a central portion along the center
line of apertures.
[0136] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater are arranged along a center line,
the spacing between adjacent apertures decreasing progressively towards end portions
along the center line from a selected even spacing in a central portion along the
center line of apertures, and the size of apertures increasing progressively towards
end portions along the center line from a selected even aperture size in a central
portion along the center line of apertures.
[0137] The elongated thermal physical vapor deposition source of wherein the plurality of
vapor efflux apertures defined in the vaporization heater are arranged in a pattern
with respect to a pattern center line, the pattern including parallel rows of apertures
towards end portions of the pattern center line, and the pattern including a sequence
of single apertures in a central portion of the pattern center line.
[0138] The elongated thermal physical vapor deposition source wherein the plurality of vapor
efflux apertures defined in the vaporization heater include apertures having a polygonal
outline, a circular outline, an ellipsoidal outline, an oval outline, or a combination
of such aperture outlines.
[0139] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes doped or undoped organic hole-injecting
material, doped or undoped organic hole-transporting material, doped or undoped organic
light-emitting material, or doped or undoped organic electron-transporting material.
[0140] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes powder, flakes, particulates, or one or
more solid pellets of such organic material.
[0141] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic host materials.
[0142] The elongated thermal physical vapor deposition source wherein the solid organic
material received in the container includes one or more organic dopant materials.
[0143] The elongated thermal physical vapor deposition source of wherein the solid organic
material received in the container includes one or more organic host materials and
one or more organic dopant materials.
[0144] The elongated thermal physical vapor deposition source wherein the means for providing
relative motion between the elongated vapor deposition source and the structure includes
a lead screw adapted either to move the source with respect to a fixedly disposed
structure, or to move the structure with respect to a fixedly disposed source.