(19)
(11)
EP 1 344 250 A2
(12)
(88)
Date of publication A3:
01.05.2003
(43)
Date of publication:
17.09.2003
Bulletin 2003/38
(21)
Application number:
01987070.8
(22)
Date of filing:
14.11.2001
(51)
International Patent Classification (IPC)
7
:
H01L
21/8247
,
H01L
27/115
,
H01L
21/336
,
H01L
29/788
(86)
International application number:
PCT/US0143/903
(87)
International publication number:
WO 0204/5158
(
06.06.2002
Gazette 2002/23)
(84)
Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
(30)
Priority:
01.12.2000
US 727955
(71)
Applicant:
Infineon Technologies North America Corp.
San Jose, CA 95112-4508 (US)
(72)
Inventor:
CASAROTTO, Daniele
Wappinger Falls, NY 12590 (US)
(74)
Representative:
Epping Hermann & Fischer
Ridlerstrasse 55
80339 München
80339 München (DE)
(54)
MEMORY CELL WITH VERTICAL FLOATING GATE TRANSISTOR