(19)
(11) EP 1 344 250 A2

(12)

(88) Date of publication A3:
01.05.2003

(43) Date of publication:
17.09.2003 Bulletin 2003/38

(21) Application number: 01987070.8

(22) Date of filing: 14.11.2001
(51) International Patent Classification (IPC)7H01L 21/8247, H01L 27/115, H01L 21/336, H01L 29/788
(86) International application number:
PCT/US0143/903
(87) International publication number:
WO 0204/5158 (06.06.2002 Gazette 2002/23)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 01.12.2000 US 727955

(71) Applicant: Infineon Technologies North America Corp.
San Jose, CA 95112-4508 (US)

(72) Inventor:
  • CASAROTTO, Daniele
    Wappinger Falls, NY 12590 (US)

(74) Representative: Epping Hermann & Fischer 
Ridlerstrasse 55
80339 München
80339 München (DE)

   


(54) MEMORY CELL WITH VERTICAL FLOATING GATE TRANSISTOR