PROCESS FOR CONTROLLING THERMAL HISTORY OF VACANCY-DOMINATED, SINGLE CRYSTAL SILICON - Patent 1346086

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EP 1 346 086 A2

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(88)	Date of publication A3:
	16.01.2003

(43)	Date of publication:
	24.09.2003 Bulletin 2003/39

(21)	Application number: 01989767.7

(22)	Date of filing: 26.11.2001

(51)	International Patent Classification (IPC)⁷: C30B 29/06, C30B 15/00

(86)	International application number:
	PCT/US0144/180

(87)	International publication number:
	WO 0204/4446 (06.06.2002 Gazette 2002/23)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

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Priority:

30.11.2000 JP 2000364601
08.12.2000 JP 2000374147
07.03.2001 US 273980 P

(71)	Applicant: MEMC Electronic Materials, Inc.
	St. Peters, Missouri 63376 (US)

(72)	Inventors:
	KOJIMA, Makoto,MEMC Japan Ltd. Utsunomiya-city,Tochigi 321-32 (JP) ISHII, Yasuhiro,MEMC Japan, Ltd. Utsunomiya-city,Tochigi 321-32 (JP)

(74)	Representative: Eyles, Christopher Thomas
	W.P. THOMPSON & CO.55 Drury Lane London WC2B 5SQ London WC2B 5SQ (GB)

(54)	PROCESS FOR CONTROLLING THERMAL HISTORY OF VACANCY-DOMINATED, SINGLE CRYSTAL SILICON