(19)
(11) EP 1 347 508 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
08.02.2012 Bulletin 2012/06

(45) Mention of the grant of the patent:
03.08.2011 Bulletin 2011/31

(21) Application number: 01272288.0

(22) Date of filing: 21.12.2001
(51) International Patent Classification (IPC): 
H01L 21/324(2006.01)
(86) International application number:
PCT/JP2001/011256
(87) International publication number:
WO 2002/052632 (04.07.2002 Gazette 2002/27)

(54)

METHOD OF HEAT TREATMENT OF SILICON WAFER DOPED WITH BORON

VERFAHREN ZUR HITZEBEHANDLUNG EINES MIT BOR DOTIERTEN SILIZIUMWAFERS

PROCEDE DE TRAITEMENT THERMIQUE DE PLAQUETTES DE SILICIUM DOPEES AU BORE

(84) Designated Contracting States:
DE IT

(30) Priority: 22.12.2000 JP 2000389777

(43) Date of publication of application:
24.09.2003 Bulletin 2003/39

(73) Proprietor: Sumco Techxiv Corporation
Omura-shi, Nagasaki 856-8555 (JP)

(72) Inventors:
  • SATO, Yuji,
    Omura-shi, Nagasaki 856-8555 (JP)
  • YOSHINO, Shirou,
    Omura-shi, Nagasaki 856-8555 (JP)
  • FURUKAWA, Hiroshi,
    Omura-shi, Nagasaki 856-8555 (JP)
  • MATSUYAMA, Hiroyuki,
    Omura-shi, Nagasaki 856-8555 (JP)

(74) Representative: DTS Zürich 
Resirain 1
8125 Zollikerberg/Zürich
8125 Zollikerberg/Zürich (CH)


(56) References cited: : 
EP-A- 0 926 719
JP-A- 4 167 433
JP-A- 10 144 697
JP-A- 2000 058 552
 EP-A2- 0 603 849
JP-A- 10 144 696
JP-A- 10 144 698
   
  • KUMAGAI Y ET AL: "Formation of periodic step and terrace structure on Si(100) surface during annealing in hydrogen diluted with inert gas" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 16, no. 3, May 1998 (1998-05), pages 1775-1778, XP012004029 ISSN: 0734-2101
  • TAMATSUKA M ET AL: "HIGH PERFORMANCE SILICON WAFER WITH WIDE GROWN-IN VOID FREE ZONE AND HIGH DENSITY INTERNAL GETTERING SITE ACHIEVED VIA RAPID CRYSTALGROWTH WITH NITROGEN DOPING AND HIGH TEMPERATURE HYDROGEN AND/OR ARGON ANNEALING" ELECTROCHEMICAL SOCIETY PROCEEDINGS, ELECTROCHEMICAL SOCIETY, PENNINGTON, NJ, US, vol. 99, no. 1, May 1999 (1999-05), pages 456-467, XP002934357 ISSN: 0161-6374
  • ZHONG LEI ET AL: "Outdiffusion of impurity atoms from silicon crystals and its dependence upon the annealing atmosphere" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 68, no. 9, 26 February 1996 (1996-02-26), pages 1229-1231, XP012015919 ISSN: 0003-6951
  • PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10, 31 August 1998 (1998-08-31) & JP 10 144697 A (TOSHIBA CERAMICS CO LTD), 29 May 1998 (1998-05-29)
  • PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10, 31 August 1998 (1998-08-31) & JP 10 144696 A (TOSHIBA CERAMICS CO LTD), 29 May 1998 (1998-05-29)
  • STEVIE F A ET AL: "Boron contamination of surfaces in silicon microelectronics processing: characterization and causes" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 9, no. 5, September 1991 (1991-09), pages 2813-2816, XP002111369 ISSN: 0734-2101
  • F.A. STEVIE ET AL.: 'Boron contamination of surfaces in silicon microelectronics processing: Characterization and causes' J. VAC. SCI. TECHNOL. A vol. 9, no. 5, 31 October 1991, pages 2813 - 2816, XP002111369
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).