(19)
(11) EP 1 361 614 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
26.12.2012 Bulletin 2012/52

(45) Mention of the grant of the patent:
07.11.2012 Bulletin 2012/45

(21) Application number: 02711222.6

(22) Date of filing: 24.01.2002
(51) International Patent Classification (IPC): 
H01L 21/04(2006.01)
H01L 21/316(2006.01)
 H01L 29/78(2006.01)
(86) International application number:
PCT/JP2002/000512
(87) International publication number:
WO 2002/059980 (01.08.2002 Gazette 2002/31)

(54)

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

HALBLEITERBAUELEMENTEHERSTELLUNGSVERFAHREN

PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR

(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 25.01.2001 JP 2001017680

(43) Date of publication of application:
12.11.2003 Bulletin 2003/46

(73) Proprietors:
  • National Institute of Advanced Industrial Science and Technology
    Tokyo 100-0013 (JP)
  • Sanyo Electric Co., Ltd.
    Moriguchi-shi Osaka, 570-8677 (JP)

(72) Inventors:
  • FUKUDA, Kenji, Nat. Inst. of Advenced Ind. Science
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • ARAI, Kazuo, Nat. Inst. of Advenced Ind. Science
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • SENZAKI, Junji, Nat.Inst. of Advenced Ind. Science
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • HARADA, Shinsuke, National Inst. of Advenced Ind.
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • KOSUGI, Ryoji, Nat. Inst. of Advenced Ind. Science
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • ADACHI, K., Nat. Inst. of Advenced Ind. Science
    Tsukuba-shi, Ibaraki 305-8568 (JP)
  • SUZUKI, Seiji, c/o Sanyo Electric Co., Ltd.
    Moriguchi-shi, Osaka 570-8677 (JP)

(74) Representative: Faulkner, Thomas John et al
Cleveland 10 Fetter Lane
London EC4A 1BR
London EC4A 1BR (GB)


(56) References cited: : 
WO-A-97/17730
JP-A- 8 186 179
US-A- 6 028 012
 JP-A- 8 186 179
US-A- 5 151 759
   
  • LORI A LIPKIN ET AL: "Insulator Investigation on SiC for Improved Reliability" IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 46, no. 3, March 1999 (1999-03), XP011016818 ISSN: 0018-9383
  • ULRICH SCHMID ET AL: "High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiC" IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 47, no. 4, April 2000 (2000-04), XP011017219 ISSN: 0018-9383
  • WANG X W ET AL: "High temperature (450/spl deg/C) reliable NMISFET's on p-type 6H-SiC" ELECTRON DEVICES MEETING, 1999. IEDM TECHNICAL DIGEST. INTERNATIONAL WASHINGTON, DC, USA 5-8 DEC. 1999, PISCATAWAY, NJ, USA,IEEE, US, 5 December 1999 (1999-12-05), pages 209-212, XP010372129 ISBN: 0-7803-5410-9
  • PROVERBIO E ET AL: "Low-Temperature Oxidation of Silicon Nitride by Water in Supercritical Condition" JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, ELSEVIER SCIENCE PUBLISHERS, BARKING, ESSEX, GB, vol. 16, no. 10, 1996, pages 1121-1126, XP004047418 ISSN: 0955-2219
  • OPILA E J: "Variation of the Oxidation Rate of Silicon Carbide with Water-Vapor Pressure" JOURNAL OF THE AMERICAN CERAMIC SOCIETY, vol. 82, no. 3, 1999, pages 625-636, XP002472515
  • WILLIAM E. WAGNER ET AL.: 'Characterization of silicon carbid e(SiC) epitaxial channel MOSFETs' IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 47, no. 11, November 2000, pages 2214 - 2220, XP000970490
  • LORI A. LIPKIN ET AL.: 'Insulator investigation on SiC for improved reliability' IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 46, no. 3, March 1999, pages 525 - 532, XP000926942
  • MAN PIO LAM ET AL.: 'Punchthrough behavior in short channel NMOS and PMOS 6H-silicon carbide transistors at elevated temperatures' IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGY vol. 22, no. 3, September 1999, pages 433 - 438, XP002951595
  • LORI A. LIPKIN ET AL.: 'SiC devices with ONO stacked dielelectrics' MATERIALS SCIENCE FORUM-1999 vol. 338-342, 2000, pages 1093 - 1096, XP002951596
  • KATSUNORI UENO ET AL.: 'Counter-doped MOSFET's of 4H-SiC' IEEE ELECTRON DEVICE LETTERS vol. 20, no. 12, December 1999, pages 624 - 626, XP000890738
  • ULRICH SCHMID ET AL.: 'High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC' IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 47, no. 4, April 2000, pages 687 - 691, XP000947260
  • SCOTT T. SHEPPARD ET AL.: 'Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC' IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 41, no. 7, July 1994, pages 1257 - 1264, XP000453328
   
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