(19)
(11) EP 1 367 656 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
13.04.2005 Bulletin 2005/15

(43) Date of publication A2:
03.12.2003 Bulletin 2003/49

(21) Application number: 03012365.7

(22) Date of filing: 30.05.2003
(51) International Patent Classification (IPC)7: H01L 33/00
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
Designated Extension States:
AL LT LV MK

(30) Priority: 31.05.2002 JP 2002159613
25.03.2003 JP 2003081901

(71) Applicant: Toyoda Gosei Co., Ltd.
Nishikasugai-gun, Aichi-ken, 452-8564 (JP)

(72) Inventors:
  • Senda, Masanobu, c/o Toyoda Gosei Co., Ltd.
    Nishikasugai-gun, Aichi 452-8564 (JP)
  • Uemura, Toshiya, c/o Toyoda Gosei Co., Ltd.
    Nishikasugai-gun, Aichi 452-8564 (JP)
  • Omoya, Hideki, c/o Toyoda Gosei Co., Ltd.
    Nishikasugai-gun, Aichi 452-8564 (JP)
  • Hashimura, Masaki, c/o Toyoda Gosei Co., Ltd.
    Nishikasugai-gun, Aichi 452-8564 (JP)

(74) Representative: Kramer - Barske - Schmidtchen 
European Patent Attorneys Patenta Radeckestrasse 43
81245 München
81245 München (DE)

   


(54) Group III nitride compound semiconductor light-emitting element


(57) A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).






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